DE2513458A1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE2513458A1
DE2513458A1 DE19752513458 DE2513458A DE2513458A1 DE 2513458 A1 DE2513458 A1 DE 2513458A1 DE 19752513458 DE19752513458 DE 19752513458 DE 2513458 A DE2513458 A DE 2513458A DE 2513458 A1 DE2513458 A1 DE 2513458A1
Authority
DE
Germany
Prior art keywords
emitter
base
region
semiconductor component
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19752513458
Other languages
German (de)
English (en)
Inventor
Tadaharu Tsuyuki
Hajime Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3530774A external-priority patent/JPS5437797B2/ja
Priority claimed from JP49125869A external-priority patent/JPS5151287A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2513458A1 publication Critical patent/DE2513458A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Bipolar Transistors (AREA)
DE19752513458 1974-03-28 1975-03-26 Halbleiterbauelement Ceased DE2513458A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3530774A JPS5437797B2 (enExample) 1974-03-28 1974-03-28
JP49125869A JPS5151287A (enExample) 1974-10-31 1974-10-31

Publications (1)

Publication Number Publication Date
DE2513458A1 true DE2513458A1 (de) 1975-10-02

Family

ID=26374277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752513458 Ceased DE2513458A1 (de) 1974-03-28 1975-03-26 Halbleiterbauelement

Country Status (6)

Country Link
CA (1) CA1016664A (enExample)
DE (1) DE2513458A1 (enExample)
FR (1) FR2266307B1 (enExample)
GB (1) GB1503570A (enExample)
IT (1) IT1034715B (enExample)
NL (1) NL7503797A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3028134A1 (de) * 1979-08-01 1981-02-05 Hitachi Ltd Lichtgesteuerte halbleiteranordnung und verfahren zu ihrer herstellung

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
US5589840A (en) * 1991-11-05 1996-12-31 Seiko Epson Corporation Wrist-type wireless instrument and antenna apparatus
DE59302374D1 (de) * 1992-01-13 1996-05-30 Cedis Licensing Gmbh Zahnradgetriebe

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050448B (enExample) * 1959-02-12
DE1090329B (de) * 1958-09-05 1960-10-06 Siemens Ag Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050448B (enExample) * 1959-02-12
DE1090329B (de) * 1958-09-05 1960-10-06 Siemens Ag Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3028134A1 (de) * 1979-08-01 1981-02-05 Hitachi Ltd Lichtgesteuerte halbleiteranordnung und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
FR2266307B1 (enExample) 1978-10-06
IT1034715B (it) 1979-10-10
NL7503797A (nl) 1975-09-30
CA1016664A (en) 1977-08-30
GB1503570A (en) 1978-03-15
FR2266307A1 (enExample) 1975-10-24

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Legal Events

Date Code Title Description
8178 Suspension cancelled
8162 Independent application
8131 Rejection