GB1503570A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1503570A
GB1503570A GB12697/75A GB1269775A GB1503570A GB 1503570 A GB1503570 A GB 1503570A GB 12697/75 A GB12697/75 A GB 12697/75A GB 1269775 A GB1269775 A GB 1269775A GB 1503570 A GB1503570 A GB 1503570A
Authority
GB
United Kingdom
Prior art keywords
march
semiconductor devices
heading
oct
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12697/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3530774A external-priority patent/JPS5437797B2/ja
Priority claimed from JP49125869A external-priority patent/JPS5151287A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1503570A publication Critical patent/GB1503570A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Bipolar Transistors (AREA)
GB12697/75A 1974-03-28 1975-03-26 Semiconductor devices Expired GB1503570A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3530774A JPS5437797B2 (enExample) 1974-03-28 1974-03-28
JP49125869A JPS5151287A (enExample) 1974-10-31 1974-10-31

Publications (1)

Publication Number Publication Date
GB1503570A true GB1503570A (en) 1978-03-15

Family

ID=26374277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12697/75A Expired GB1503570A (en) 1974-03-28 1975-03-26 Semiconductor devices

Country Status (6)

Country Link
CA (1) CA1016664A (enExample)
DE (1) DE2513458A1 (enExample)
FR (1) FR2266307B1 (enExample)
GB (1) GB1503570A (enExample)
IT (1) IT1034715B (enExample)
NL (1) NL7503797A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5509321A (en) * 1992-01-13 1996-04-23 Technolizenz Establishment Toothed gear
US5589840A (en) * 1991-11-05 1996-12-31 Seiko Epson Corporation Wrist-type wireless instrument and antenna apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
JPS5945233B2 (ja) * 1979-08-01 1984-11-05 株式会社日立製作所 光点弧型半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050448B (enExample) * 1959-02-12
NL242787A (enExample) * 1958-09-05
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589840A (en) * 1991-11-05 1996-12-31 Seiko Epson Corporation Wrist-type wireless instrument and antenna apparatus
US5509321A (en) * 1992-01-13 1996-04-23 Technolizenz Establishment Toothed gear

Also Published As

Publication number Publication date
FR2266307B1 (enExample) 1978-10-06
DE2513458A1 (de) 1975-10-02
IT1034715B (it) 1979-10-10
NL7503797A (nl) 1975-09-30
CA1016664A (en) 1977-08-30
FR2266307A1 (enExample) 1975-10-24

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940326