DE2501525C3 - Verfahren zur Herstellung einer Halbleiterverbindung - Google Patents
Verfahren zur Herstellung einer HalbleiterverbindungInfo
- Publication number
- DE2501525C3 DE2501525C3 DE19752501525 DE2501525A DE2501525C3 DE 2501525 C3 DE2501525 C3 DE 2501525C3 DE 19752501525 DE19752501525 DE 19752501525 DE 2501525 A DE2501525 A DE 2501525A DE 2501525 C3 DE2501525 C3 DE 2501525C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- group
- temperature
- melt
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000155 melt Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 20
- 230000008020 evaporation Effects 0.000 claims description 18
- 238000001704 evaporation Methods 0.000 claims description 18
- 241000947853 Vibrionales Species 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 28
- 229910052698 phosphorus Inorganic materials 0.000 description 25
- 239000011574 phosphorus Substances 0.000 description 25
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 11
- 229910005540 GaP Inorganic materials 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 241000152447 Hades Species 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/06—Hydrogen phosphides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7401442A FR2257333B1 (enrdf_load_stackoverflow) | 1974-01-16 | 1974-01-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2501525A1 DE2501525A1 (de) | 1975-07-17 |
| DE2501525B2 DE2501525B2 (de) | 1979-09-13 |
| DE2501525C3 true DE2501525C3 (de) | 1980-05-29 |
Family
ID=9133544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752501525 Expired DE2501525C3 (de) | 1974-01-16 | 1975-01-16 | Verfahren zur Herstellung einer Halbleiterverbindung |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS55359B2 (enrdf_load_stackoverflow) |
| BE (1) | BE824456A (enrdf_load_stackoverflow) |
| DE (1) | DE2501525C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2257333B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1491372A (enrdf_load_stackoverflow) |
| IT (1) | IT1028329B (enrdf_load_stackoverflow) |
-
1974
- 1974-01-16 FR FR7401442A patent/FR2257333B1/fr not_active Expired
-
1975
- 1975-01-13 IT IT1922175A patent/IT1028329B/it active
- 1975-01-13 JP JP620975A patent/JPS55359B2/ja not_active Expired
- 1975-01-13 GB GB128875A patent/GB1491372A/en not_active Expired
- 1975-01-16 DE DE19752501525 patent/DE2501525C3/de not_active Expired
- 1975-01-16 BE BE152441A patent/BE824456A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2501525A1 (de) | 1975-07-17 |
| GB1491372A (en) | 1977-11-09 |
| DE2501525B2 (de) | 1979-09-13 |
| FR2257333A1 (enrdf_load_stackoverflow) | 1975-08-08 |
| FR2257333B1 (enrdf_load_stackoverflow) | 1980-05-09 |
| IT1028329B (it) | 1979-01-30 |
| JPS55359B2 (enrdf_load_stackoverflow) | 1980-01-07 |
| BE824456A (fr) | 1975-07-16 |
| JPS50106896A (enrdf_load_stackoverflow) | 1975-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1178827B (de) | Verfahren zur Herstellung von Halbleiterkoerpern fuer Halbleiterbauelemente durch pyrolytische Zersetzung einer Halbleiterverbindung | |
| DE1025995B (de) | Verfahren zur Herstellung von Halbleiterkoerpern mit aneinandergrenzenden Zonen verschiedener Leitfaehigkeit | |
| DE2161072C3 (de) | Verfahren zur Herstellung eines Einkristalls aus einer Halbleiterverbindung und Schiffchen zur Durchführung dieses Verfahrens | |
| DE2501525C3 (de) | Verfahren zur Herstellung einer Halbleiterverbindung | |
| DE3872644T2 (de) | Verfahren zum erzeugen von monokristallinen quecksilber-cadmium-tellurid-schichten. | |
| DE3331653C2 (enrdf_load_stackoverflow) | ||
| DE2038875A1 (de) | Verfahren zur Herstellung gewachsener Mischkristalle | |
| Port et al. | Phosphoreszenz und Verzögerte Fluoreszenz von Naphthalin in verschiedenen Mischkristallen | |
| DE2000096C3 (de) | Verfahren und Vorrichtung zum epitaktischen Abscheiden einer Schicht aus einem Halbleitermaterial auf einer ebenen Fläche eines einkristallinen Substrats | |
| CH457367A (de) | Verfahren zum Einstellen eines ungesättigten Dampfes eines Stoffes in einer Zone | |
| DE1900293C3 (de) | Flüssige Kältemittel/Absorptionsmittel-Zusammensetzung | |
| DE2137772C3 (de) | Verfahren zum Züchten von Kristallen aus halbleitenden Verbindungen | |
| DE2629650A1 (de) | Verfahren und vorrichtung zum wachsen von hgi tief 2 -kristallen | |
| DE1519844C3 (de) | Verfahren zum Beseitigen von Einschlüssen aus Kristallen | |
| DE2025376C3 (de) | Einkristall-Züchtungsverfahren für Bariumnatriumniobat und verwandte Verbindungen | |
| DE2060673C3 (de) | Vorrichtung zur Herstellung von Phosphiden | |
| DE2032638C3 (de) | Verfahren und Vorrichtung zur Herstellung eines Verbindungseinkristalls | |
| DE1769568A1 (de) | Verfahren zur Herstellung von Kristallen aus Verbindungen und Legierungen | |
| DE1040693B (de) | Verfahren zur Herstellung einer halbleitenden stoechiometrischen Verbindung aus Komponenten hoechster Reinheit fuer Halbleiteranordnungen | |
| DE1944985C (de) | Verfahren und Vorrichtung zum Zuchten einer Schicht aus Quecksilber cadmiumtellund | |
| DE304856C (enrdf_load_stackoverflow) | ||
| DE2160746A1 (de) | Verfahren zur Herstellung von Einkristallen aus Halbleiterverbindungen | |
| DE1771918C (de) | Verfahren zum Herstellen von Mischkristallschichten aus Cadmiumsulfid und Cadmiumselenid durch Aufdampfen im Hochvakuum | |
| AT252999B (de) | Verfahren zur Herstellung bandförmiger, dendritischer Halbleiterkristalle aus der Dampfphase | |
| DE1002741B (de) | Verfahren zur Herstellung im Schmelzprozess und/oder zum Umschmelzen einer anorganischen stoechiometrischen Verbindung in kristalliner Form |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |