DE2501344C2 - Halbleiterlaser mit Doppelheterostruktur - Google Patents

Halbleiterlaser mit Doppelheterostruktur

Info

Publication number
DE2501344C2
DE2501344C2 DE2501344A DE2501344A DE2501344C2 DE 2501344 C2 DE2501344 C2 DE 2501344C2 DE 2501344 A DE2501344 A DE 2501344A DE 2501344 A DE2501344 A DE 2501344A DE 2501344 C2 DE2501344 C2 DE 2501344C2
Authority
DE
Germany
Prior art keywords
semiconductor laser
active zone
layer
zone
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2501344A
Other languages
German (de)
English (en)
Other versions
DE2501344A1 (de
Inventor
Stewart Edward Locust N.J. Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2501344A1 publication Critical patent/DE2501344A1/de
Application granted granted Critical
Publication of DE2501344C2 publication Critical patent/DE2501344C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE2501344A 1974-01-17 1975-01-15 Halbleiterlaser mit Doppelheterostruktur Expired DE2501344C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US434181A US3883821A (en) 1974-01-17 1974-01-17 Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness

Publications (2)

Publication Number Publication Date
DE2501344A1 DE2501344A1 (de) 1975-08-07
DE2501344C2 true DE2501344C2 (de) 1984-03-15

Family

ID=23723141

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2501344A Expired DE2501344C2 (de) 1974-01-17 1975-01-15 Halbleiterlaser mit Doppelheterostruktur

Country Status (6)

Country Link
US (1) US3883821A (en, 2012)
JP (1) JPS5740672B2 (en, 2012)
CA (1) CA1020657A (en, 2012)
DE (1) DE2501344C2 (en, 2012)
FR (1) FR2258711B1 (en, 2012)
GB (1) GB1493201A (en, 2012)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213805A (en) * 1973-05-28 1980-07-22 Hitachi, Ltd. Liquid phase epitaxy method of forming a filimentary laser device
US4121177A (en) * 1973-05-28 1978-10-17 Hitachi, Ltd. Semiconductor device and a method of fabricating the same
US3916339A (en) * 1974-11-25 1975-10-28 Rca Corp Asymmetrically excited semiconductor injection laser
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
US4166253A (en) * 1977-08-15 1979-08-28 International Business Machines Corporation Heterostructure diode injection laser having a constricted active region
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
CA1127282A (en) * 1978-05-22 1982-07-06 Takashi Sugino Semiconductor laser and method of making the same
JPS5522807A (en) * 1978-06-30 1980-02-18 Hitachi Ltd Semiconductor laser element and manufacturing of the same
US4340967A (en) * 1980-06-02 1982-07-20 Bell Telephone Laboratories, Incorporated Semiconductor lasers with stable higher-order modes parallel to the junction plane
JPS58165282U (ja) * 1982-04-30 1983-11-02 藤倉ゴム工業株式会社 ピストン式流体作動装置
JPS58165283U (ja) * 1982-04-30 1983-11-02 藤倉ゴム工業株式会社 ピストン式流体作動装置
US4787086A (en) * 1986-05-19 1988-11-22 American Telephone And Telegraph Company, At&T Bell Laboratories High-power, fundamental transverse mode laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
JPS502235B1 (en, 2012) * 1970-09-07 1975-01-24
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
US3790902A (en) * 1972-09-05 1974-02-05 Bell Telephone Labor Inc Fundamental transverse mode operation in solid state lasers

Also Published As

Publication number Publication date
GB1493201A (en) 1977-11-30
JPS50104883A (en, 2012) 1975-08-19
US3883821A (en) 1975-05-13
DE2501344A1 (de) 1975-08-07
FR2258711A1 (en, 2012) 1975-08-18
FR2258711B1 (en, 2012) 1977-07-01
JPS5740672B2 (en, 2012) 1982-08-28
CA1020657A (en) 1977-11-08

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01S 3/19

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee