DE2458789A1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE2458789A1
DE2458789A1 DE19742458789 DE2458789A DE2458789A1 DE 2458789 A1 DE2458789 A1 DE 2458789A1 DE 19742458789 DE19742458789 DE 19742458789 DE 2458789 A DE2458789 A DE 2458789A DE 2458789 A1 DE2458789 A1 DE 2458789A1
Authority
DE
Germany
Prior art keywords
layer
semiconductor
capillary
chip
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19742458789
Other languages
German (de)
English (en)
Other versions
DE2458789C2 (https=
Inventor
Hans Bendig
Gerd Beyermann
Helga Lux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2441613A external-priority patent/DE2441613C2/de
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19742458789 priority Critical patent/DE2458789A1/de
Publication of DE2458789A1 publication Critical patent/DE2458789A1/de
Application granted granted Critical
Publication of DE2458789C2 publication Critical patent/DE2458789C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/73—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control for cooling by change of state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Weting (AREA)
DE19742458789 1974-08-30 1974-12-12 Halbleiteranordnung Granted DE2458789A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19742458789 DE2458789A1 (de) 1974-08-30 1974-12-12 Halbleiteranordnung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2441613A DE2441613C2 (de) 1974-08-30 1974-08-30 Halbleiteranordnung
DE19742458789 DE2458789A1 (de) 1974-08-30 1974-12-12 Halbleiteranordnung

Publications (2)

Publication Number Publication Date
DE2458789A1 true DE2458789A1 (de) 1976-06-16
DE2458789C2 DE2458789C2 (https=) 1987-08-20

Family

ID=33160354

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742458789 Granted DE2458789A1 (de) 1974-08-30 1974-12-12 Halbleiteranordnung

Country Status (1)

Country Link
DE (1) DE2458789A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547906A1 (fr) * 1983-03-24 1984-12-28 Uop Inc Bande a surface amelioree d'ebullition germinee et dispositif de refroidissement de composants electroniques

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Electronic Design", Bd. 22, 1974, Nr. 14, S. 32,34 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547906A1 (fr) * 1983-03-24 1984-12-28 Uop Inc Bande a surface amelioree d'ebullition germinee et dispositif de refroidissement de composants electroniques

Also Published As

Publication number Publication date
DE2458789C2 (https=) 1987-08-20

Similar Documents

Publication Publication Date Title
DE19927046B4 (de) Keramik-Metall-Substrat als Mehrfachsubstrat
DE69706910T2 (de) Herstellungsverfahren einer T-förmigen Gate-Elektrode in einem Halbleiterbauelement, und die T-förmige Gate-Elektrode
DE2718894C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2153103A1 (de) Integrierte Schaltungsanordnung und Verfahren zur Herstellung derselben
DE19832706C2 (de) Halbleiterbauelement im Chip-Format und Verfahren zu seiner Herstellung
DE19638666C1 (de) Schmelzsicherung mit einer Schutzschicht in einer integrierten Halbleiterschaltung sowie zugehöriges Herstellungsverfahren
DE3203898A1 (de) Verfahren zum herstellen von strukturen oder mustern
DE2351437B2 (de) Verfahren zum Herstellen von Halbleiterbauelementen mit mindestens zwei Schichten aus elektrisch leitendem Material
DE3788119T2 (de) Verfahren zum Herstellen einer Halbleitervorrichtung mit vermindertem Verpackungsdruck.
CH631291A5 (de) Verfahren zur stabilisierenden oberflaechenbehandlung von halbleiterkoerpern.
EP0028786B1 (de) Ionenimplantationsverfahren
DE2111633A1 (de) Verfahren zur Herstellung eines Oberflaechen-Feldeffekt-Transistors
DE3413167A1 (de) Verfahren zur herstellung eines supraleitenden kontaktes
DE3440109A1 (de) Verfahren zur herstellung verformbarer vielfach-verbindungen fuer den elektrischen anschluss mikroelektronischer bauelemente und nach diesem verfahren hergestellte vielfachverbindungen
DE2458789A1 (de) Halbleiteranordnung
DE102015114579B4 (de) Halbleiterchip
DE112018007677T5 (de) Verfahren zur Herstellung eines Halbleitergerätes
DE19945170B4 (de) Verfahren zur Herstellung einer Schablonenmaske
DE3421127A1 (de) Verfahren zum herstellen einer halbleiteranordnung
WO2024061689A1 (de) Verfahren zum herstellen eines elektronischen bauelements und elektronisches bauelement
DE19755961A1 (de) Gekoppelte Leitung und Verfahren zum Herstellen derselben
DE19710375C2 (de) Verfahren zum Herstellen von räumlich strukturierten Bauteilen
DE1937537A1 (de) Integrierter Magnetspeicher und Verfahren zu dessen Herstellung
DE2748401A1 (de) Halbleiteranordnung
DE19921867C2 (de) Verfahren zur Herstellung eines Halbleiterbauelements mit mindestens einem verkapselten Chip auf einem Substrat

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8176 Proceedings suspended because of application no:

Ref document number: 2441613

Country of ref document: DE

Format of ref document f/p: P

8178 Suspension cancelled
AF Is addition to no.

Ref country code: DE

Ref document number: 2441613

Format of ref document f/p: P

AF Is addition to no.

Ref country code: DE

Ref document number: 2441613

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
8340 Patent of addition ceased/non-payment of fee of main patent