DE2456951A1 - Halbleiterschaltungspackung und verfahren zu ihrer herstellung - Google Patents
Halbleiterschaltungspackung und verfahren zu ihrer herstellungInfo
- Publication number
- DE2456951A1 DE2456951A1 DE19742456951 DE2456951A DE2456951A1 DE 2456951 A1 DE2456951 A1 DE 2456951A1 DE 19742456951 DE19742456951 DE 19742456951 DE 2456951 A DE2456951 A DE 2456951A DE 2456951 A1 DE2456951 A1 DE 2456951A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- connection
- semiconductor circuit
- connecting conductors
- insulating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004020 conductor Substances 0.000 claims description 96
- 239000011521 glass Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000012876 carrier material Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000010276 construction Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008602 contraction Effects 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 240000004808 Saccharomyces cerevisiae Species 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000007651 thermal printing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42100473A | 1973-12-03 | 1973-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2456951A1 true DE2456951A1 (de) | 1975-06-05 |
Family
ID=23668787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742456951 Withdrawn DE2456951A1 (de) | 1973-12-03 | 1974-12-02 | Halbleiterschaltungspackung und verfahren zu ihrer herstellung |
Country Status (7)
| Country | Link |
|---|---|
| JP (2) | JPS5087587A (enrdf_load_stackoverflow) |
| CA (1) | CA1032276A (enrdf_load_stackoverflow) |
| CH (1) | CH585968A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2456951A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2253282B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1458846A (enrdf_load_stackoverflow) |
| SE (1) | SE403852B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577214A (en) * | 1981-05-06 | 1986-03-18 | At&T Bell Laboratories | Low-inductance power/ground distribution in a package for a semiconductor chip |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2485262A1 (fr) * | 1980-06-19 | 1981-12-24 | Thomson Csf | Boitier d'encapsulation resistant a de fortes pressions externes |
| JPH04120765A (ja) * | 1990-09-12 | 1992-04-21 | Seiko Epson Corp | 半導体装置とその製造方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3374537A (en) * | 1965-03-22 | 1968-03-26 | Philco Ford Corp | Method of connecting leads to a semiconductive device |
| US3436810A (en) * | 1967-07-17 | 1969-04-08 | Jade Corp | Method of packaging integrated circuits |
| DE2003423A1 (de) * | 1970-01-27 | 1971-09-16 | Licentia Gmbh | Verfahren zum Kontaktieren von Halbleiteranordnungen |
| US3668770A (en) * | 1970-05-25 | 1972-06-13 | Rca Corp | Method of connecting semiconductor device to terminals of package |
| DE2217647A1 (de) * | 1971-04-26 | 1972-11-09 | RCA Corp., New York, N.Y. (V.StA.) | Verbindungsanordnung zum Anschließen einer integrierten Schaltung |
| JPS4727491U (enrdf_load_stackoverflow) | 1971-04-17 | 1972-11-28 | ||
| JPS4836983A (enrdf_load_stackoverflow) | 1971-09-10 | 1973-05-31 |
-
1974
- 1974-10-16 CA CA211,500A patent/CA1032276A/en not_active Expired
- 1974-11-04 GB GB4763874A patent/GB1458846A/en not_active Expired
- 1974-12-02 FR FR7439403A patent/FR2253282B1/fr not_active Expired
- 1974-12-02 DE DE19742456951 patent/DE2456951A1/de not_active Withdrawn
- 1974-12-02 SE SE7415064A patent/SE403852B/xx not_active IP Right Cessation
- 1974-12-03 CH CH1603574A patent/CH585968A5/xx not_active IP Right Cessation
- 1974-12-03 JP JP13941974A patent/JPS5087587A/ja active Pending
-
1982
- 1982-07-06 JP JP10241582U patent/JPS5860940U/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3374537A (en) * | 1965-03-22 | 1968-03-26 | Philco Ford Corp | Method of connecting leads to a semiconductive device |
| US3436810A (en) * | 1967-07-17 | 1969-04-08 | Jade Corp | Method of packaging integrated circuits |
| DE2003423A1 (de) * | 1970-01-27 | 1971-09-16 | Licentia Gmbh | Verfahren zum Kontaktieren von Halbleiteranordnungen |
| US3668770A (en) * | 1970-05-25 | 1972-06-13 | Rca Corp | Method of connecting semiconductor device to terminals of package |
| JPS4727491U (enrdf_load_stackoverflow) | 1971-04-17 | 1972-11-28 | ||
| DE2217647A1 (de) * | 1971-04-26 | 1972-11-09 | RCA Corp., New York, N.Y. (V.StA.) | Verbindungsanordnung zum Anschließen einer integrierten Schaltung |
| JPS4836983A (enrdf_load_stackoverflow) | 1971-09-10 | 1973-05-31 |
Non-Patent Citations (2)
| Title |
|---|
| JP-GM 27 491/72 * |
| JP-OS 36 983/73 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577214A (en) * | 1981-05-06 | 1986-03-18 | At&T Bell Laboratories | Low-inductance power/ground distribution in a package for a semiconductor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5087587A (enrdf_load_stackoverflow) | 1975-07-14 |
| FR2253282A1 (enrdf_load_stackoverflow) | 1975-06-27 |
| SE7415064L (enrdf_load_stackoverflow) | 1975-06-04 |
| GB1458846A (en) | 1976-12-15 |
| CH585968A5 (enrdf_load_stackoverflow) | 1977-03-15 |
| JPS5860940U (ja) | 1983-04-25 |
| SE403852B (sv) | 1978-09-04 |
| FR2253282B1 (enrdf_load_stackoverflow) | 1980-09-12 |
| CA1032276A (en) | 1978-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8125 | Change of the main classification |
Ipc: H01L 23/50 |
|
| 8126 | Change of the secondary classification |
Ipc: H01L 21/92 |
|
| 8130 | Withdrawal |