DE2436648A1 - Speicherzelle fuer ein feld aus dynamischen speicherzellen - Google Patents

Speicherzelle fuer ein feld aus dynamischen speicherzellen

Info

Publication number
DE2436648A1
DE2436648A1 DE19742436648 DE2436648A DE2436648A1 DE 2436648 A1 DE2436648 A1 DE 2436648A1 DE 19742436648 DE19742436648 DE 19742436648 DE 2436648 A DE2436648 A DE 2436648A DE 2436648 A1 DE2436648 A1 DE 2436648A1
Authority
DE
Germany
Prior art keywords
memory cell
read
write
memory
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19742436648
Other languages
German (de)
English (en)
Inventor
Alan Bormann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE2436648A1 publication Critical patent/DE2436648A1/de
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE19742436648 1973-07-30 1974-07-30 Speicherzelle fuer ein feld aus dynamischen speicherzellen Pending DE2436648A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38387373A 1973-07-30 1973-07-30

Publications (1)

Publication Number Publication Date
DE2436648A1 true DE2436648A1 (de) 1975-03-06

Family

ID=23515092

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742436648 Pending DE2436648A1 (de) 1973-07-30 1974-07-30 Speicherzelle fuer ein feld aus dynamischen speicherzellen

Country Status (3)

Country Link
JP (1) JPS5045527A (enrdf_load_stackoverflow)
DE (1) DE2436648A1 (enrdf_load_stackoverflow)
FR (1) FR2246021A1 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121450A (enrdf_load_stackoverflow) * 1974-08-15 1976-02-20 Nippon Electric Co
KR101921618B1 (ko) * 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101932909B1 (ko) * 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
KR101884031B1 (ko) * 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
JP5770068B2 (ja) * 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Also Published As

Publication number Publication date
FR2246021A1 (en) 1975-04-25
JPS5045527A (enrdf_load_stackoverflow) 1975-04-23

Similar Documents

Publication Publication Date Title
DE2721851A1 (de) Verriegelnder leseverstaerker fuer halbleiterspeicheranordnungen
DE2601622A1 (de) Programmierbarer und loeschbarer festwertspeicher
DE2840578A1 (de) Abtast-verstaerker
DE2740700C3 (enrdf_load_stackoverflow)
DE2940500C2 (enrdf_load_stackoverflow)
DE2628383A1 (de) Monolithischer halbleiterspeicher fuer wahlfreien zugriff mit abfuehlschaltungen
DE3249749C2 (enrdf_load_stackoverflow)
DE2708702A1 (de) Selektionstreiberschaltung
DE69028616T2 (de) Nichtflüchtiger Halbleiterspeicher in dem Blindzellen verwendet werden, um eine Spannung zu erzeugen, während Daten gelesen werden
DE3101802A1 (de) Monolithisch integrierter halbleiterspeicher
DE2422136A1 (de) Speicherschaltung mit einzeltransistorspeicherzellen
DE2141679A1 (de) Dynamischer MOS-Speicherfeld-Chip
DE3030994C2 (enrdf_load_stackoverflow)
DE2033260C3 (de) Kapazitiver Speicher mit Feldeffekttransistoren
EP1153394B1 (de) Verfahren zum betrieb einer speicherzellenanordnung mit selbstverstärkenden dynamischen speicherzellen
DE3328042C2 (enrdf_load_stackoverflow)
DE3307756C2 (enrdf_load_stackoverflow)
DE2436648A1 (de) Speicherzelle fuer ein feld aus dynamischen speicherzellen
DE2022256C2 (de) Festwertspeicher- und Decoderanordnung
DE2842690A1 (de) Mos-festwertspeicher
DE2840329A1 (de) Adresspuffer fuer einen mos-speicherbaustein
DE3529476A1 (de) Treiberkreis fuer einen gemeinsamen signalabtastverstaerker
DE2636377C3 (de) Binärspeicherzelle
EP0300184B1 (de) Schaltungsanordnung in einer integrierten Halbleiterschaltung
DE2418750C3 (de) MI112 S-Speichertransistor