FR2246021A1 - Storage cell for field or dynamic storage cells - has memory nodule and read-write line - Google Patents
Storage cell for field or dynamic storage cells - has memory nodule and read-write lineInfo
- Publication number
- FR2246021A1 FR2246021A1 FR7426483A FR7426483A FR2246021A1 FR 2246021 A1 FR2246021 A1 FR 2246021A1 FR 7426483 A FR7426483 A FR 7426483A FR 7426483 A FR7426483 A FR 7426483A FR 2246021 A1 FR2246021 A1 FR 2246021A1
- Authority
- FR
- France
- Prior art keywords
- read
- field
- write line
- nodule
- storage cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 210000000352 storage cell Anatomy 0.000 title abstract 3
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38387373A | 1973-07-30 | 1973-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2246021A1 true FR2246021A1 (en) | 1975-04-25 |
Family
ID=23515092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7426483A Withdrawn FR2246021A1 (en) | 1973-07-30 | 1974-07-30 | Storage cell for field or dynamic storage cells - has memory nodule and read-write line |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5045527A (enrdf_load_stackoverflow) |
| DE (1) | DE2436648A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2246021A1 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5121450A (enrdf_load_stackoverflow) * | 1974-08-15 | 1976-02-20 | Nippon Electric Co | |
| KR101921618B1 (ko) * | 2010-02-05 | 2018-11-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
| KR101932909B1 (ko) * | 2010-03-04 | 2018-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치 및 반도체 장치 |
| KR101884031B1 (ko) * | 2010-04-07 | 2018-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| JP5770068B2 (ja) * | 2010-11-12 | 2015-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3533089A (en) * | 1969-05-16 | 1970-10-06 | Shell Oil Co | Single-rail mosfet memory with capacitive storage |
-
1974
- 1974-07-30 JP JP49086691A patent/JPS5045527A/ja active Pending
- 1974-07-30 DE DE19742436648 patent/DE2436648A1/de active Pending
- 1974-07-30 FR FR7426483A patent/FR2246021A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5045527A (enrdf_load_stackoverflow) | 1975-04-23 |
| DE2436648A1 (de) | 1975-03-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |