DE2423114A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE2423114A1
DE2423114A1 DE2423114A DE2423114A DE2423114A1 DE 2423114 A1 DE2423114 A1 DE 2423114A1 DE 2423114 A DE2423114 A DE 2423114A DE 2423114 A DE2423114 A DE 2423114A DE 2423114 A1 DE2423114 A1 DE 2423114A1
Authority
DE
Germany
Prior art keywords
semiconducting
area
region
diode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2423114A
Other languages
German (de)
English (en)
Inventor
Hajime Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2423114A1 publication Critical patent/DE2423114A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE2423114A 1973-05-12 1974-05-13 Halbleitervorrichtung Withdrawn DE2423114A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5290673A JPS568501B2 (enExample) 1973-05-12 1973-05-12

Publications (1)

Publication Number Publication Date
DE2423114A1 true DE2423114A1 (de) 1974-11-28

Family

ID=12927870

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2423114A Withdrawn DE2423114A1 (de) 1973-05-12 1974-05-13 Halbleitervorrichtung

Country Status (5)

Country Link
JP (1) JPS568501B2 (enExample)
DE (1) DE2423114A1 (enExample)
FR (1) FR2229141B3 (enExample)
IT (1) IT1012257B (enExample)
NL (1) NL7406423A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929869A1 (de) * 1979-07-24 1981-02-19 Itt Ind Gmbh Deutsche Monolithisch integrierte cmos-schaltung
US4253105A (en) * 1980-07-03 1981-02-24 Rca Corporation Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device
US4380021A (en) * 1979-03-22 1983-04-12 Hitachi, Ltd. Semiconductor integrated circuit
CN105957886A (zh) * 2016-06-28 2016-09-21 中国科学院微电子研究所 一种碳化硅双极结型晶体管

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714023B2 (ja) * 1986-09-29 1995-02-15 松下電子工業株式会社 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380021A (en) * 1979-03-22 1983-04-12 Hitachi, Ltd. Semiconductor integrated circuit
DE2929869A1 (de) * 1979-07-24 1981-02-19 Itt Ind Gmbh Deutsche Monolithisch integrierte cmos-schaltung
US4253105A (en) * 1980-07-03 1981-02-24 Rca Corporation Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device
CN105957886A (zh) * 2016-06-28 2016-09-21 中国科学院微电子研究所 一种碳化硅双极结型晶体管
CN105957886B (zh) * 2016-06-28 2019-05-14 中国科学院微电子研究所 一种碳化硅双极结型晶体管

Also Published As

Publication number Publication date
JPS503579A (enExample) 1975-01-14
JPS568501B2 (enExample) 1981-02-24
IT1012257B (it) 1977-03-10
NL7406423A (enExample) 1974-11-14
FR2229141B3 (enExample) 1977-03-11
FR2229141A1 (enExample) 1974-12-06

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination