DE2420266A1 - Optoelektronisches halbleiterbauelement - Google Patents
Optoelektronisches halbleiterbauelementInfo
- Publication number
- DE2420266A1 DE2420266A1 DE2420266A DE2420266A DE2420266A1 DE 2420266 A1 DE2420266 A1 DE 2420266A1 DE 2420266 A DE2420266 A DE 2420266A DE 2420266 A DE2420266 A DE 2420266A DE 2420266 A1 DE2420266 A1 DE 2420266A1
- Authority
- DE
- Germany
- Prior art keywords
- emitting diode
- light
- switching element
- semiconductor
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 230000005693 optoelectronics Effects 0.000 title claims description 7
- 239000011521 glass Substances 0.000 claims description 16
- 238000001465 metallisation Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 9
- 239000000758 substrate Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
Landscapes
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2124173A GB1432697A (en) | 1973-05-04 | 1973-05-04 | Optically coupled semiconductive switching devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2420266A1 true DE2420266A1 (de) | 1974-11-21 |
Family
ID=10159591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2420266A Withdrawn DE2420266A1 (de) | 1973-05-04 | 1974-04-26 | Optoelektronisches halbleiterbauelement |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3938173A (enExample) |
| DE (1) | DE2420266A1 (enExample) |
| FR (1) | FR2228303B1 (enExample) |
| GB (1) | GB1432697A (enExample) |
| IT (1) | IT1010251B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2922926A1 (de) * | 1978-06-16 | 1979-12-20 | Motorola Inc | Monolithischer halbleiter-trigger |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4122479A (en) * | 1975-01-31 | 1978-10-24 | Hitachi, Ltd. | Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body |
| GB1499203A (en) * | 1975-02-04 | 1978-01-25 | Standard Telephones Cables Ltd | Thyristor structure to facilitate zero point switching |
| US4144541A (en) * | 1977-01-27 | 1979-03-13 | Electric Power Research Institute, Inc. | Light-activated semiconductor device package unit |
| US4219833A (en) * | 1978-05-22 | 1980-08-26 | Electric Power Research Institute, Inc. | Multigate light fired thyristor and method |
| US4207583A (en) * | 1978-07-27 | 1980-06-10 | Electric Power Research Institute, Inc. | Multiple gated light fired thyristor with non-critical light pipe coupling |
| JPS5815281A (ja) * | 1981-07-21 | 1983-01-28 | Sharp Corp | 光結合素子およびその製造方法 |
| DE3713067A1 (de) * | 1986-09-30 | 1988-03-31 | Siemens Ag | Optoelektronisches koppelelement und verfahren zu dessen herstellung |
| DE3633251A1 (de) * | 1986-09-30 | 1988-03-31 | Siemens Ag | Optoelektronisches koppelelement |
| DE3633181C2 (de) * | 1986-09-30 | 1998-12-10 | Siemens Ag | Reflexlichtschranke |
| JPH02210334A (ja) * | 1989-02-09 | 1990-08-21 | Matsushita Electric Ind Co Ltd | 光電子集積回路 |
| DE4435079C1 (de) * | 1994-09-30 | 1996-01-18 | Siemens Ag | Abschaltbares Halbleiterbauelement |
| AU2003301057A1 (en) * | 2002-12-20 | 2004-07-22 | Cree, Inc. | Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1190506B (de) * | 1963-10-10 | 1965-04-08 | Siemens Ag | Optisch gesteuerte, mindestens vier Zonen von abwechselnd unterschiedlichem Leitungstyp aufweisende Schalt- oder Kippdiode |
| US3354316A (en) * | 1965-01-06 | 1967-11-21 | Bell Telephone Labor Inc | Optoelectronic device using light emitting diode and photodetector |
| US3462605A (en) * | 1965-09-22 | 1969-08-19 | Gen Electric | Semiconductor light-emitter and combination light-emitter-photocell wherein the reflector of the light-emitter is comprised of a material different from that of the light-emitter |
| NL6706639A (enExample) * | 1966-07-15 | 1968-01-16 | ||
| DE1614471A1 (de) * | 1967-03-31 | 1970-05-27 | Siemens Ag | Optoelektronisches Bauelement |
| DE1812199C3 (de) * | 1968-12-02 | 1980-07-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Integrierte, optisch-elektronische Festkörper-Schaltungsanordnung |
-
1973
- 1973-05-04 GB GB2124173A patent/GB1432697A/en not_active Expired
-
1974
- 1974-04-26 DE DE2420266A patent/DE2420266A1/de not_active Withdrawn
- 1974-04-30 IT IT22089/74A patent/IT1010251B/it active
- 1974-05-03 FR FR7415320A patent/FR2228303B1/fr not_active Expired
- 1974-05-03 US US05/466,571 patent/US3938173A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2922926A1 (de) * | 1978-06-16 | 1979-12-20 | Motorola Inc | Monolithischer halbleiter-trigger |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1010251B (it) | 1977-01-10 |
| FR2228303B1 (enExample) | 1978-04-21 |
| US3938173A (en) | 1976-02-10 |
| FR2228303A1 (enExample) | 1974-11-29 |
| GB1432697A (en) | 1976-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8139 | Disposal/non-payment of the annual fee |