DE2363577A1 - Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor - Google Patents
Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistorInfo
- Publication number
- DE2363577A1 DE2363577A1 DE2363577A DE2363577A DE2363577A1 DE 2363577 A1 DE2363577 A1 DE 2363577A1 DE 2363577 A DE2363577 A DE 2363577A DE 2363577 A DE2363577 A DE 2363577A DE 2363577 A1 DE2363577 A1 DE 2363577A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- base
- bipolar transistor
- doped
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 title description 20
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- 239000011029 spinel Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2363577A DE2363577A1 (de) | 1973-12-20 | 1973-12-20 | Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor |
| AT917974A AT340481B (de) | 1973-12-20 | 1974-11-15 | Kombination aus einem bipolaren transistor und einem feldeffekt-transistor mit isolierter torelektrode in dunnschichttechnik |
| GB51302/74A GB1481184A (en) | 1973-12-20 | 1974-11-27 | Integrated circuits |
| CH1650774A CH586959A5 (xx) | 1973-12-20 | 1974-12-11 | |
| CA216,005A CA1033468A (en) | 1973-12-20 | 1974-12-13 | Combination of a bipolar transistor and a mos field effect transistor |
| IT30529/74A IT1046735B (it) | 1973-12-20 | 1974-12-13 | Transistore bipolare combinato con un transistore ad effetto di campo a semiconduttori a base di ossidi metallici |
| FR7441548A FR2255710B2 (xx) | 1973-12-20 | 1974-12-17 | |
| SE7416017A SE404853B (sv) | 1973-12-20 | 1974-12-19 | Bipoler transistor i tunnskiktsteknik |
| JP49146687A JPS5094887A (xx) | 1973-12-20 | 1974-12-19 | |
| NL7416703A NL7416703A (nl) | 1973-12-20 | 1974-12-20 | Kombinatie van een bipolaire transistor en een mos-veldeffekttransistor. |
| BE151790A BE823686R (fr) | 1973-12-20 | 1974-12-20 | Transistor bipolaire realise selon la technique des couches minces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2363577A DE2363577A1 (de) | 1973-12-20 | 1973-12-20 | Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2363577A1 true DE2363577A1 (de) | 1975-06-26 |
Family
ID=5901421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2363577A Withdrawn DE2363577A1 (de) | 1973-12-20 | 1973-12-20 | Kombination aus einem bipolaren transistor und einem mos-feldeffekttransistor |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5094887A (xx) |
| AT (1) | AT340481B (xx) |
| BE (1) | BE823686R (xx) |
| CA (1) | CA1033468A (xx) |
| CH (1) | CH586959A5 (xx) |
| DE (1) | DE2363577A1 (xx) |
| FR (1) | FR2255710B2 (xx) |
| GB (1) | GB1481184A (xx) |
| IT (1) | IT1046735B (xx) |
| NL (1) | NL7416703A (xx) |
| SE (1) | SE404853B (xx) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4857766A (en) * | 1987-10-30 | 1989-08-15 | International Business Machine Corporation | BiMos input circuit |
| DE3620686C2 (de) * | 1986-06-20 | 1999-07-22 | Daimler Chrysler Ag | Strukturierter Halbleiterkörper |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3470632D1 (en) * | 1983-02-03 | 1988-05-26 | Fairchild Camera Instr Co | High voltage mos/bipolar power transistor apparatus |
| WO2009019866A1 (ja) * | 2007-08-07 | 2009-02-12 | Kaori Takakubo | 半導体装置及びその駆動方法 |
-
1973
- 1973-12-20 DE DE2363577A patent/DE2363577A1/de not_active Withdrawn
-
1974
- 1974-11-15 AT AT917974A patent/AT340481B/de active
- 1974-11-27 GB GB51302/74A patent/GB1481184A/en not_active Expired
- 1974-12-11 CH CH1650774A patent/CH586959A5/xx not_active IP Right Cessation
- 1974-12-13 IT IT30529/74A patent/IT1046735B/it active
- 1974-12-13 CA CA216,005A patent/CA1033468A/en not_active Expired
- 1974-12-17 FR FR7441548A patent/FR2255710B2/fr not_active Expired
- 1974-12-19 JP JP49146687A patent/JPS5094887A/ja active Pending
- 1974-12-19 SE SE7416017A patent/SE404853B/xx unknown
- 1974-12-20 BE BE151790A patent/BE823686R/xx active
- 1974-12-20 NL NL7416703A patent/NL7416703A/xx not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3620686C2 (de) * | 1986-06-20 | 1999-07-22 | Daimler Chrysler Ag | Strukturierter Halbleiterkörper |
| US4857766A (en) * | 1987-10-30 | 1989-08-15 | International Business Machine Corporation | BiMos input circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CH586959A5 (xx) | 1977-04-15 |
| FR2255710B2 (xx) | 1979-02-23 |
| AT340481B (de) | 1977-12-12 |
| IT1046735B (it) | 1980-07-31 |
| SE7416017L (xx) | 1975-06-23 |
| JPS5094887A (xx) | 1975-07-28 |
| CA1033468A (en) | 1978-06-20 |
| BE823686R (fr) | 1975-04-16 |
| GB1481184A (en) | 1977-07-27 |
| ATA917974A (de) | 1977-04-15 |
| SE404853B (sv) | 1978-10-30 |
| NL7416703A (nl) | 1975-06-24 |
| FR2255710A2 (xx) | 1975-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |