DE2351215C3 - Verfahren zur Verbesserung der Wirksamkeit von Halbleiterleuchtkörpern - Google Patents

Verfahren zur Verbesserung der Wirksamkeit von Halbleiterleuchtkörpern

Info

Publication number
DE2351215C3
DE2351215C3 DE2351215A DE2351215A DE2351215C3 DE 2351215 C3 DE2351215 C3 DE 2351215C3 DE 2351215 A DE2351215 A DE 2351215A DE 2351215 A DE2351215 A DE 2351215A DE 2351215 C3 DE2351215 C3 DE 2351215C3
Authority
DE
Germany
Prior art keywords
semiconductor
refractive index
oxide film
luminous
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2351215A
Other languages
German (de)
English (en)
Other versions
DE2351215A1 (de
DE2351215B2 (de
Inventor
Yoshifumi Ichikawa Chiba Mori
Takuo Prof. Tokio Sugano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HAYASHI KENTARO TOKIO
Original Assignee
HAYASHI KENTARO TOKIO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HAYASHI KENTARO TOKIO filed Critical HAYASHI KENTARO TOKIO
Publication of DE2351215A1 publication Critical patent/DE2351215A1/de
Publication of DE2351215B2 publication Critical patent/DE2351215B2/de
Application granted granted Critical
Publication of DE2351215C3 publication Critical patent/DE2351215C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Element Separation (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Formation Of Insulating Films (AREA)
DE2351215A 1972-10-12 1973-10-12 Verfahren zur Verbesserung der Wirksamkeit von Halbleiterleuchtkörpern Expired DE2351215C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10228072A JPS4960488A (enrdf_load_stackoverflow) 1972-10-12 1972-10-12

Publications (3)

Publication Number Publication Date
DE2351215A1 DE2351215A1 (de) 1974-04-25
DE2351215B2 DE2351215B2 (de) 1975-12-11
DE2351215C3 true DE2351215C3 (de) 1979-07-19

Family

ID=14323182

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2351215A Expired DE2351215C3 (de) 1972-10-12 1973-10-12 Verfahren zur Verbesserung der Wirksamkeit von Halbleiterleuchtkörpern

Country Status (3)

Country Link
JP (1) JPS4960488A (enrdf_load_stackoverflow)
DE (1) DE2351215C3 (enrdf_load_stackoverflow)
GB (1) GB1442769A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60208813A (ja) * 1984-04-02 1985-10-21 Mitsubishi Electric Corp 光電変換装置とその製造方法

Also Published As

Publication number Publication date
DE2351215A1 (de) 1974-04-25
GB1442769A (en) 1976-07-14
DE2351215B2 (de) 1975-12-11
JPS4960488A (enrdf_load_stackoverflow) 1974-06-12

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee