DE2347802C2 - Verfahren zur Herstellung eines dielektrischen optischen Wellenleiters, sowie die hiernach hergestellten optischen Wellenleiter - Google Patents
Verfahren zur Herstellung eines dielektrischen optischen Wellenleiters, sowie die hiernach hergestellten optischen WellenleiterInfo
- Publication number
- DE2347802C2 DE2347802C2 DE2347802A DE2347802A DE2347802C2 DE 2347802 C2 DE2347802 C2 DE 2347802C2 DE 2347802 A DE2347802 A DE 2347802A DE 2347802 A DE2347802 A DE 2347802A DE 2347802 C2 DE2347802 C2 DE 2347802C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- heterostructure
- mesa
- solution
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 50
- 230000003287 optical effect Effects 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 10
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052794 bromium Inorganic materials 0.000 claims description 10
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 9
- 238000003776 cleavage reaction Methods 0.000 claims description 3
- 230000007017 scission Effects 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000007743 anodising Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- FHMDYDAXYDRBGZ-UHFFFAOYSA-N platinum tin Chemical compound [Sn].[Pt] FHMDYDAXYDRBGZ-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000037390 scarring Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
- H01L21/31679—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of AIII BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/911—Differential oxidation and etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geometry (AREA)
- Electromagnetism (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00291937A US3833435A (en) | 1972-09-25 | 1972-09-25 | Dielectric optical waveguides and technique for fabricating same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2347802A1 DE2347802A1 (de) | 1974-05-22 |
DE2347802C2 true DE2347802C2 (de) | 1982-07-29 |
Family
ID=23122505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2347802A Expired DE2347802C2 (de) | 1972-09-25 | 1973-09-22 | Verfahren zur Herstellung eines dielektrischen optischen Wellenleiters, sowie die hiernach hergestellten optischen Wellenleiter |
Country Status (10)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19627793A1 (de) * | 1996-07-10 | 1998-01-15 | Forschungszentrum Juelich Gmbh | Wellenleiter |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3994758A (en) * | 1973-03-19 | 1976-11-30 | Nippon Electric Company, Ltd. | Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection |
US4213805A (en) * | 1973-05-28 | 1980-07-22 | Hitachi, Ltd. | Liquid phase epitaxy method of forming a filimentary laser device |
US4121177A (en) * | 1973-05-28 | 1978-10-17 | Hitachi, Ltd. | Semiconductor device and a method of fabricating the same |
US4005312A (en) * | 1973-11-08 | 1977-01-25 | Lemelson Jerome H | Electro-optical circuits and manufacturing techniques |
CA1049127A (en) * | 1974-03-05 | 1979-02-20 | Kunio Itoh | Semiconductor devices with improved heat radiation and current concentration |
US3984173A (en) * | 1974-04-08 | 1976-10-05 | Texas Instruments Incorporated | Waveguides for integrated optics |
US4075652A (en) * | 1974-04-17 | 1978-02-21 | Matsushita Electronics Corporation | Junction gate type gaas field-effect transistor and method of forming |
JPS50159288A (US07582779-20090901-C00044.png) * | 1974-06-11 | 1975-12-23 | ||
US3936855A (en) * | 1974-08-08 | 1976-02-03 | International Telephone And Telegraph Corporation | Light-emitting diode fabrication process |
FR2294549A1 (fr) * | 1974-12-09 | 1976-07-09 | Radiotechnique Compelec | Procede de realisation de dispositifs optoelectroniques |
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
NL7505134A (nl) * | 1975-05-01 | 1976-11-03 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting. |
DE2624436C2 (de) * | 1976-06-01 | 1982-11-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Lichtwellenleiter mit integriertem Detektorelement |
US4171234A (en) * | 1976-07-20 | 1979-10-16 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles |
NL7609607A (nl) * | 1976-08-30 | 1978-03-02 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
US4099305A (en) * | 1977-03-14 | 1978-07-11 | Bell Telephone Laboratories, Incorporated | Fabrication of mesa devices by MBE growth over channeled substrates |
JPS5516479A (en) * | 1978-07-21 | 1980-02-05 | Sumitomo Electric Ind Ltd | Heterojunction light receiving diode |
US4230997A (en) * | 1979-01-29 | 1980-10-28 | Bell Telephone Laboratories, Incorporated | Buried double heterostructure laser device |
NL7903197A (nl) * | 1979-04-24 | 1980-10-28 | Philips Nv | Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze |
JPS55153338A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Surface treatment of semiconductor substrate |
US4360246A (en) * | 1980-05-23 | 1982-11-23 | Hughes Aircraft Company | Integrated waveguide and FET detector |
US4354898A (en) * | 1981-06-24 | 1982-10-19 | Bell Telephone Laboratories, Incorporated | Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures |
US4460910A (en) * | 1981-11-23 | 1984-07-17 | International Business Machines Corporation | Heterojunction semiconductor |
US4550489A (en) * | 1981-11-23 | 1985-11-05 | International Business Machines Corporation | Heterojunction semiconductor |
US4582390A (en) * | 1982-01-05 | 1986-04-15 | At&T Bell Laboratories | Dielectric optical waveguide and technique for fabricating same |
US4661961A (en) * | 1983-06-20 | 1987-04-28 | American Telephone And Telegraph Company, At&T Bell Laboratories | Buried heterostructure devices with unique contact-facilitating layers |
US4566171A (en) * | 1983-06-20 | 1986-01-28 | At&T Bell Laboratories | Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices |
US4595454A (en) * | 1984-06-15 | 1986-06-17 | At&T Bell Laboratories | Fabrication of grooved semiconductor devices |
US4652333A (en) * | 1985-06-19 | 1987-03-24 | Honeywell Inc. | Etch process monitors for buried heterostructures |
US4764246A (en) * | 1985-08-06 | 1988-08-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Buried undercut mesa-like waveguide and method of making same |
US4725112A (en) * | 1985-08-06 | 1988-02-16 | American Telephone And Telegraph Company, At&T Bell Laboratories | Buried undercut mesa-like waveguide |
US4929571A (en) * | 1987-02-27 | 1990-05-29 | Mitsubishi Denki Kabushiki Kaisha | Method of making a buried crescent laser with air gap insulator |
JPS63211788A (ja) * | 1987-02-27 | 1988-09-02 | Mitsubishi Electric Corp | 半導体レ−ザおよびその製造方法 |
JPH01198706A (ja) * | 1987-12-02 | 1989-08-10 | Furukawa Electric Co Ltd:The | 埋め込み型光導波路 |
JPH01147410A (ja) * | 1987-12-02 | 1989-06-09 | Furukawa Electric Co Ltd:The | 埋め込み型光導波路 |
US4961618A (en) * | 1989-06-05 | 1990-10-09 | The United States Of America As Represented By The Secretary Of The Navy | Optical communication system having a wide-core single-mode planar waveguide |
JP2550798B2 (ja) * | 1991-04-12 | 1996-11-06 | 富士通株式会社 | 微小冷陰極の製造方法 |
US5270532A (en) * | 1992-06-15 | 1993-12-14 | The United States Of America As Represented By The United States Department Of Energy | Traveling-wave photodetector |
US5567659A (en) * | 1995-05-25 | 1996-10-22 | Northern Telecom Limited | Method of etching patterns in III-V material with accurate depth control |
DE19650133C1 (de) * | 1996-12-03 | 1998-01-02 | Forschungszentrum Juelich Gmbh | Optischer Empfänger und Verfahren zu seiner Herstellung |
KR100347542B1 (ko) | 1999-12-22 | 2002-08-07 | 주식회사 하이닉스반도체 | 반도체 소자의 전하저장전극 형성 방법 |
WO2002023641A1 (en) * | 2000-09-15 | 2002-03-21 | Regents Of The University Of California | Oxide and air apertures and method of manufacture |
JP2006511944A (ja) * | 2002-12-20 | 2006-04-06 | クリー インコーポレイテッド | 半導体メサ構造および導電性接合部を含む電子素子ならびに関連素子を形成する方法 |
JP5223552B2 (ja) * | 2008-05-02 | 2013-06-26 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3465159A (en) * | 1966-06-27 | 1969-09-02 | Us Army | Light amplifying device |
US3563630A (en) * | 1966-12-07 | 1971-02-16 | North American Rockwell | Rectangular dielectric optical wave-guide of width about one-half wave-length of the transmitted light |
US3523223A (en) * | 1967-11-01 | 1970-08-04 | Texas Instruments Inc | Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing |
BE792614A (fr) * | 1971-12-13 | 1973-03-30 | Western Electric Co | Procede de realisation d'une couche d'oxyde sur un semi-conducteur |
-
1972
- 1972-09-25 US US00291937A patent/US3833435A/en not_active Expired - Lifetime
-
1973
- 1973-03-30 CA CA167,642A patent/CA1003511A/en not_active Expired
- 1973-09-17 SE SE7312639A patent/SE387751B/xx unknown
- 1973-09-20 NL NL7312980A patent/NL7312980A/xx not_active Application Discontinuation
- 1973-09-21 IT IT52683/73A patent/IT1004023B/it active
- 1973-09-21 BE BE135890A patent/BE805142A/xx unknown
- 1973-09-22 DE DE2347802A patent/DE2347802C2/de not_active Expired
- 1973-09-24 FR FR7334127A patent/FR2200533B1/fr not_active Expired
- 1973-09-25 GB GB4477773A patent/GB1448372A/en not_active Expired
- 1973-09-25 JP JP48107058A patent/JPS4971950A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19627793A1 (de) * | 1996-07-10 | 1998-01-15 | Forschungszentrum Juelich Gmbh | Wellenleiter |
DE19627793C2 (de) * | 1996-07-10 | 2002-02-28 | Forschungszentrum Juelich Gmbh | Wellenleiter |
Also Published As
Publication number | Publication date |
---|---|
GB1448372A (en) | 1976-09-08 |
JPS4971950A (US07582779-20090901-C00044.png) | 1974-07-11 |
FR2200533A1 (US07582779-20090901-C00044.png) | 1974-04-19 |
CA1003511A (en) | 1977-01-11 |
NL7312980A (US07582779-20090901-C00044.png) | 1974-03-27 |
DE2347802A1 (de) | 1974-05-22 |
IT1004023B (it) | 1976-07-10 |
SE387751B (sv) | 1976-09-13 |
FR2200533B1 (US07582779-20090901-C00044.png) | 1978-01-13 |
BE805142A (fr) | 1974-01-16 |
US3833435A (en) | 1974-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2347802C2 (de) | Verfahren zur Herstellung eines dielektrischen optischen Wellenleiters, sowie die hiernach hergestellten optischen Wellenleiter | |
DE3689067T2 (de) | Verfahren zur herstellung von optischen halbleiterstrukturen. | |
DE3300131C2 (de) | Integriertes optisches Bauelement und Verfahren zu seiner Herstellung | |
DE69010485T2 (de) | Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers. | |
DE68913934T2 (de) | Verstimmbarer Halbleiterdiodenlaser mit verteilter Reflexion und Verfahren zum Herstellen eines derartigen Halbleiterdiodenlasers. | |
DE2710813A1 (de) | Heterostruktur-halbleiterlaser | |
DE2747371C3 (de) | Halbleiterlaser | |
DE3650547T2 (de) | Verfahren zur Herstellung von Halbleiterlasern | |
DE69407354T2 (de) | Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren | |
DE69017332T2 (de) | Verfahren zum Herstellen einer eine Mesa enthaltenden Halbleiteranordnung. | |
DE3410793A1 (de) | Halbleiter-laservorrichtung | |
DE3855551T2 (de) | Halbleiter-Laservorrichtung und deren Herstellungsverfahren | |
DE68910492T2 (de) | Halbleiterlaservorrichtung. | |
DE3028612T1 (de) | Selektive Plasmaätzung von dielektrischen Masken in Gegenwart von nativen Oxiden von Halbleitern aus Verbindungen der Gruppen IH-V | |
DE2701102C3 (de) | Halbleiter-Injektionslaser | |
DE69217318T2 (de) | Optoelektronische Halbleiteranordnung mit einem Strahlungsleiter und Verfahren zum Herstellen einer derartigen Anordnung | |
DE3751782T2 (de) | Halbleiterstrukturen und deren Herstellungsverfahren | |
DE4010889C2 (US07582779-20090901-C00044.png) | ||
DE69801283T2 (de) | Optisches Halbleiterbauelement | |
DE3221497A1 (de) | Stabilisierter halbleiterlaser | |
DE3714512A1 (de) | Halbleiterlaser | |
DE69205716T2 (de) | Quanten-Faden-Laser. | |
EP0262440A2 (de) | Verfahren zur Erzeugung eines Streifenwellenleiters in einer epitaktischen Hetero-Schichtstruktur | |
DE3020251C2 (US07582779-20090901-C00044.png) | ||
DE3586665T2 (de) | Vielfachanordnung von halbleiterlasern. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OD | Request for examination | ||
D2 | Grant after examination | ||
8339 | Ceased/non-payment of the annual fee |