DE2347067A1 - Bipolarer transistor - Google Patents
Bipolarer transistorInfo
- Publication number
- DE2347067A1 DE2347067A1 DE19732347067 DE2347067A DE2347067A1 DE 2347067 A1 DE2347067 A1 DE 2347067A1 DE 19732347067 DE19732347067 DE 19732347067 DE 2347067 A DE2347067 A DE 2347067A DE 2347067 A1 DE2347067 A1 DE 2347067A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- collector
- transistor
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002019 doping agent Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000005589 Calophyllum inophyllum Species 0.000 description 1
- 241001137251 Corvidae Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 235000015108 pies Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29097672A | 1972-09-21 | 1972-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2347067A1 true DE2347067A1 (de) | 1974-03-28 |
Family
ID=23118293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732347067 Pending DE2347067A1 (de) | 1972-09-21 | 1973-09-19 | Bipolarer transistor |
Country Status (9)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2543736B1 (fr) * | 1983-03-31 | 1986-05-02 | Thomson Csf | Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture |
| JP2559800B2 (ja) * | 1988-03-25 | 1996-12-04 | 株式会社宇宙通信基礎技術研究所 | トランジスタの評価方法 |
-
1973
- 1973-03-30 CA CA167,643A patent/CA978281A/en not_active Expired
- 1973-09-11 SE SE7312357A patent/SE391606B/xx unknown
- 1973-09-17 BE BE135714A patent/BE804932A/xx unknown
- 1973-09-17 GB GB4346773A patent/GB1414066A/en not_active Expired
- 1973-09-17 NL NL7312775A patent/NL7312775A/xx not_active Application Discontinuation
- 1973-09-19 DE DE19732347067 patent/DE2347067A1/de active Pending
- 1973-09-20 IT IT2917773A patent/IT993337B/it active
- 1973-09-20 FR FR7333797A patent/FR2200625B1/fr not_active Expired
- 1973-09-21 JP JP10607473A patent/JPS4971873A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA978281A (en) | 1975-11-18 |
| JPS4971873A (US20100268047A1-20101021-C00003.png) | 1974-07-11 |
| IT993337B (it) | 1975-09-30 |
| SE391606B (sv) | 1977-02-21 |
| GB1414066A (en) | 1975-11-12 |
| BE804932A (fr) | 1974-01-16 |
| NL7312775A (US20100268047A1-20101021-C00003.png) | 1974-03-25 |
| FR2200625A1 (US20100268047A1-20101021-C00003.png) | 1974-04-19 |
| FR2200625B1 (US20100268047A1-20101021-C00003.png) | 1979-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |