DE2343206C2 - - Google Patents
Info
- Publication number
- DE2343206C2 DE2343206C2 DE2343206A DE2343206A DE2343206C2 DE 2343206 C2 DE2343206 C2 DE 2343206C2 DE 2343206 A DE2343206 A DE 2343206A DE 2343206 A DE2343206 A DE 2343206A DE 2343206 C2 DE2343206 C2 DE 2343206C2
- Authority
- DE
- Germany
- Prior art keywords
- source region
- gate electrode
- region
- transistor arrangement
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000008719 thickening Effects 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47085950A JPS4941081A (enrdf_load_stackoverflow) | 1972-08-28 | 1972-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2343206A1 DE2343206A1 (de) | 1974-03-14 |
| DE2343206C2 true DE2343206C2 (enrdf_load_stackoverflow) | 1987-05-21 |
Family
ID=13873026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732343206 Granted DE2343206A1 (de) | 1972-08-28 | 1973-08-27 | Feldeffekt-transistoranordnung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4941081A (enrdf_load_stackoverflow) |
| AT (1) | AT349530B (enrdf_load_stackoverflow) |
| DE (1) | DE2343206A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1432989A (enrdf_load_stackoverflow) |
| NL (1) | NL7311854A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10350702A1 (de) * | 2003-10-30 | 2005-06-09 | Infineon Technologies Ag | Bauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikumschicht robusten Struktur |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL50821A (en) * | 1975-12-03 | 1978-10-31 | Hughes Aircraft Co | Resistive gate mos switch |
-
1972
- 1972-08-28 JP JP47085950A patent/JPS4941081A/ja active Pending
-
1973
- 1973-08-27 DE DE19732343206 patent/DE2343206A1/de active Granted
- 1973-08-28 GB GB4043973A patent/GB1432989A/en not_active Expired
- 1973-08-28 NL NL7311854A patent/NL7311854A/xx not_active Application Discontinuation
- 1973-08-28 AT AT746773A patent/AT349530B/de not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10350702A1 (de) * | 2003-10-30 | 2005-06-09 | Infineon Technologies Ag | Bauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikumschicht robusten Struktur |
| DE10350702B4 (de) * | 2003-10-30 | 2007-08-09 | Infineon Technologies Ag | Halbleiterbauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikusschicht robusten Struktur |
Also Published As
| Publication number | Publication date |
|---|---|
| AT349530B (de) | 1979-04-10 |
| DE2343206A1 (de) | 1974-03-14 |
| ATA746773A (de) | 1978-09-15 |
| GB1432989A (en) | 1976-04-22 |
| JPS4941081A (enrdf_load_stackoverflow) | 1974-04-17 |
| NL7311854A (enrdf_load_stackoverflow) | 1974-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8176 | Proceedings suspended because of application no: |
Ref document number: 2323471 Country of ref document: DE Format of ref document f/p: P |
|
| 8178 | Suspension cancelled | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |