GB1432989A - Field effect transistors - Google Patents
Field effect transistorsInfo
- Publication number
- GB1432989A GB1432989A GB4043973A GB4043973A GB1432989A GB 1432989 A GB1432989 A GB 1432989A GB 4043973 A GB4043973 A GB 4043973A GB 4043973 A GB4043973 A GB 4043973A GB 1432989 A GB1432989 A GB 1432989A
- Authority
- GB
- United Kingdom
- Prior art keywords
- resistive layer
- drain
- igfet
- aug
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47085950A JPS4941081A (enrdf_load_stackoverflow) | 1972-08-28 | 1972-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1432989A true GB1432989A (en) | 1976-04-22 |
Family
ID=13873026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4043973A Expired GB1432989A (en) | 1972-08-28 | 1973-08-28 | Field effect transistors |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4941081A (enrdf_load_stackoverflow) |
| AT (1) | AT349530B (enrdf_load_stackoverflow) |
| DE (1) | DE2343206A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1432989A (enrdf_load_stackoverflow) |
| NL (1) | NL7311854A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL50821A (en) * | 1975-12-03 | 1978-10-31 | Hughes Aircraft Co | Resistive gate mos switch |
| DE10350702B4 (de) * | 2003-10-30 | 2007-08-09 | Infineon Technologies Ag | Halbleiterbauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikusschicht robusten Struktur |
-
1972
- 1972-08-28 JP JP47085950A patent/JPS4941081A/ja active Pending
-
1973
- 1973-08-27 DE DE19732343206 patent/DE2343206A1/de active Granted
- 1973-08-28 GB GB4043973A patent/GB1432989A/en not_active Expired
- 1973-08-28 NL NL7311854A patent/NL7311854A/xx not_active Application Discontinuation
- 1973-08-28 AT AT746773A patent/AT349530B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| AT349530B (de) | 1979-04-10 |
| DE2343206A1 (de) | 1974-03-14 |
| ATA746773A (de) | 1978-09-15 |
| DE2343206C2 (enrdf_load_stackoverflow) | 1987-05-21 |
| JPS4941081A (enrdf_load_stackoverflow) | 1974-04-17 |
| NL7311854A (enrdf_load_stackoverflow) | 1974-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1396673A (en) | Stabilizing fet devices | |
| GB1396198A (en) | Transistors | |
| GB1425986A (en) | Semiconductor devices comprising insulated-gate- field-effect transistors | |
| GB1357515A (en) | Method for manufacturing an mos integrated circuit | |
| GB1315230A (en) | Insulated gate field effect memory transistor | |
| GB1136569A (en) | Insulated gate field effect transistors | |
| GB1340618A (en) | Charge transfer apparatus | |
| FR2381389A1 (fr) | Transistor a effet de champ mis pour des tensions source-drain elevees | |
| GB1525415A (en) | Mos transistor | |
| GB1139749A (en) | Improvements in or relating to semiconductor devices | |
| KR890004444A (ko) | Mos트랜지스터 | |
| GB1133820A (en) | Field-effect device with insulated gate | |
| GB1274986A (en) | Method of forming an oxide layer on a silicon substrate | |
| GB1109371A (en) | Metal-oxide-semiconductor field effect transistor | |
| GB1471282A (en) | Field effect semiconductor devices | |
| GB1432989A (en) | Field effect transistors | |
| GB1360578A (en) | Semiconductor integrated circuits | |
| GB1138771A (en) | Field effect device with overlapping insulated gates | |
| GB1470683A (en) | Variable impedance circuits comprising a field effect transistor | |
| GB1400780A (en) | Insulated gate field effect transistors | |
| GB1247819A (en) | Field effect semiconductor device | |
| GB1431199A (en) | Variable impedance circuits | |
| GB1327298A (en) | Insulated gate-field-effect transistor with variable gain | |
| GB1053428A (enrdf_load_stackoverflow) | ||
| GB1481724A (en) | Field effect transistors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19930827 |