DE2340107C2 - - Google Patents
Info
- Publication number
- DE2340107C2 DE2340107C2 DE2340107A DE2340107A DE2340107C2 DE 2340107 C2 DE2340107 C2 DE 2340107C2 DE 2340107 A DE2340107 A DE 2340107A DE 2340107 A DE2340107 A DE 2340107A DE 2340107 C2 DE2340107 C2 DE 2340107C2
- Authority
- DE
- Germany
- Prior art keywords
- junctions
- power semiconductor
- semiconductor component
- bevels
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH986773A CH560466A5 (en) | 1973-07-06 | 1973-07-06 | Power semiconductor component with two opposite pn-junctions - has positive chamfers in surface junction region of 30 to 60 degs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2340107A1 DE2340107A1 (de) | 1975-01-23 |
| DE2340107C2 true DE2340107C2 (US06262066-20010717-C00422.png) | 1991-03-14 |
Family
ID=4356542
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19737328984U Expired DE7328984U (de) | 1973-07-06 | 1973-08-08 | Leistungshalbleiterbauelement |
| DE19732340107 Granted DE2340107A1 (de) | 1973-07-06 | 1973-08-08 | Leistungshalbleiterbauelement |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19737328984U Expired DE7328984U (de) | 1973-07-06 | 1973-08-08 | Leistungshalbleiterbauelement |
Country Status (7)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| JPS5473583A (en) * | 1977-11-24 | 1979-06-12 | Hitachi Ltd | High dielectric strength semiconductor device |
| DE3137695A1 (de) * | 1981-09-22 | 1983-04-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung |
| WO2000065661A1 (fr) * | 1999-04-22 | 2000-11-02 | Mitsubishi Denki Kabushiki Kaisha | Dispositif semi-conducteur |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1259393A (fr) * | 1960-02-13 | 1961-04-28 | Dispositif à semi-conducteur dit tecnetron de puissance et procédé de fabrication | |
| NL276919A (US06262066-20010717-C00422.png) * | 1961-04-22 | |||
| BE628619A (US06262066-20010717-C00422.png) * | 1962-02-20 | |||
| US3575644A (en) * | 1963-01-30 | 1971-04-20 | Gen Electric | Semiconductor device with double positive bevel |
| GB1052661A (US06262066-20010717-C00422.png) * | 1963-01-30 | 1900-01-01 | ||
| SE323452B (US06262066-20010717-C00422.png) * | 1964-05-15 | 1970-05-04 | Asea Ab | |
| NL6603372A (US06262066-20010717-C00422.png) * | 1965-03-25 | 1966-09-26 | ||
| GB1057214A (en) * | 1965-05-11 | 1967-02-01 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| CH437538A (de) * | 1965-12-22 | 1967-06-15 | Bbc Brown Boveri & Cie | Steuerbares Halbleiterelement |
| JPS4418910Y1 (US06262066-20010717-C00422.png) * | 1966-11-07 | 1969-08-14 | ||
| DE1764326A1 (de) * | 1968-05-17 | 1971-07-01 | Bbc Brown Boveri & Cie | Verfahren zur Anbringung einer Hohlkehle an einem Halbleiterbauelement |
| GB1211627A (en) * | 1968-08-06 | 1970-11-11 | Westinghouse Brake & Signal | Methods of manufacture of semiconductor elements and elements manufactured therby |
| US3588632A (en) * | 1968-11-12 | 1971-06-28 | Josuke Nakata | Structurally reinforced semiconductor device |
| US3622724A (en) * | 1970-02-24 | 1971-11-23 | Gen Electric | Vacuum-type circuit interrupter having contacts with improved arc-revolving means |
| US3742593A (en) * | 1970-12-11 | 1973-07-03 | Gen Electric | Semiconductor device with positively beveled junctions and process for its manufacture |
| JPS4915669A (US06262066-20010717-C00422.png) * | 1972-06-06 | 1974-02-12 |
-
1973
- 1973-08-08 DE DE19737328984U patent/DE7328984U/de not_active Expired
- 1973-08-08 DE DE19732340107 patent/DE2340107A1/de active Granted
-
1974
- 1974-06-27 US US05/483,813 patent/US3987479A/en not_active Expired - Lifetime
- 1974-06-28 JP JP49074215A patent/JPS5842626B2/ja not_active Expired
- 1974-07-03 FR FR7423088A patent/FR2236273B1/fr not_active Expired
- 1974-07-03 SE SE7408779A patent/SE419916B/xx not_active IP Right Cessation
- 1974-07-04 GB GB2974774A patent/GB1477179A/en not_active Expired
- 1974-07-05 CA CA204,238A patent/CA1016269A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5039883A (US06262066-20010717-C00422.png) | 1975-04-12 |
| CA1016269A (en) | 1977-08-23 |
| JPS5842626B2 (ja) | 1983-09-21 |
| FR2236273A1 (US06262066-20010717-C00422.png) | 1975-01-31 |
| SE7408779L (US06262066-20010717-C00422.png) | 1975-01-07 |
| DE2340107A1 (de) | 1975-01-23 |
| US3987479A (en) | 1976-10-19 |
| GB1477179A (en) | 1977-06-22 |
| SE419916B (sv) | 1981-08-31 |
| DE7328984U (de) | 1975-05-15 |
| FR2236273B1 (US06262066-20010717-C00422.png) | 1979-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8127 | New person/name/address of the applicant |
Owner name: BBC BROWN BOVERI AG, BADEN, AARGAU, CH |
|
| 8128 | New person/name/address of the agent |
Representative=s name: RUPPRECHT, K., DIPL.-ING., PAT.-ANW., 6242 KRONBER |
|
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |