DE2336908C3 - Integrierte Halbleiteranordnung mit Mehrlagen-Metallisierung - Google Patents

Integrierte Halbleiteranordnung mit Mehrlagen-Metallisierung

Info

Publication number
DE2336908C3
DE2336908C3 DE2336908A DE2336908A DE2336908C3 DE 2336908 C3 DE2336908 C3 DE 2336908C3 DE 2336908 A DE2336908 A DE 2336908A DE 2336908 A DE2336908 A DE 2336908A DE 2336908 C3 DE2336908 C3 DE 2336908C3
Authority
DE
Germany
Prior art keywords
layer
insulation layer
holes
semiconductor
connections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2336908A
Other languages
German (de)
English (en)
Other versions
DE2336908B2 (de
DE2336908A1 (de
Inventor
Harry Charles Wappingers Falls Calhoun
Larry Ernest Poughkeepsie Freed
Carl Lee Wappingers Falls Kaufman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2336908A1 publication Critical patent/DE2336908A1/de
Publication of DE2336908B2 publication Critical patent/DE2336908B2/de
Application granted granted Critical
Publication of DE2336908C3 publication Critical patent/DE2336908C3/de
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H10W20/40—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE2336908A 1972-10-18 1973-07-20 Integrierte Halbleiteranordnung mit Mehrlagen-Metallisierung Expired DE2336908C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US298729A US3877051A (en) 1972-10-18 1972-10-18 Multilayer insulation integrated circuit structure
US05/527,572 US3982316A (en) 1972-10-18 1974-11-27 Multilayer insulation integrated circuit structure

Publications (3)

Publication Number Publication Date
DE2336908A1 DE2336908A1 (de) 1974-05-09
DE2336908B2 DE2336908B2 (de) 1974-09-26
DE2336908C3 true DE2336908C3 (de) 1975-05-07

Family

ID=26970844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2336908A Expired DE2336908C3 (de) 1972-10-18 1973-07-20 Integrierte Halbleiteranordnung mit Mehrlagen-Metallisierung

Country Status (8)

Country Link
US (2) US3877051A (enExample)
BE (1) BE805040A (enExample)
CA (1) CA978279A (enExample)
CH (1) CH564849A5 (enExample)
DE (1) DE2336908C3 (enExample)
FR (1) FR2204044B1 (enExample)
GB (1) GB1421270A (enExample)
NL (1) NL7313827A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4076575A (en) * 1976-06-30 1978-02-28 International Business Machines Corporation Integrated fabrication method of forming connectors through insulative layers
JPS57177553A (en) * 1981-04-24 1982-11-01 Toshiba Corp Semiconductor
JPS5874084A (ja) * 1981-10-29 1983-05-04 Fujitsu Ltd 半導体装置
US5084414A (en) * 1985-03-15 1992-01-28 Hewlett-Packard Company Metal interconnection system with a planar surface
US4808552A (en) * 1985-09-11 1989-02-28 Texas Instruments Incorporated Process for making vertically-oriented interconnections for VLSI devices
JPS6450443A (en) * 1987-08-20 1989-02-27 Toshiba Corp Semiconductor device
US4888665A (en) * 1988-02-19 1989-12-19 Microelectronics And Computer Technology Corporation Customizable circuitry
US5081561A (en) * 1988-02-19 1992-01-14 Microelectronics And Computer Technology Corporation Customizable circuitry
EP0403571A4 (en) * 1988-03-31 1991-01-30 Advanced Micro Devices, Inc. Gate array structure and process to allow optioning at second metal mask only
US5084404A (en) * 1988-03-31 1992-01-28 Advanced Micro Devices Gate array structure and process to allow optioning at second metal mask only
US5023701A (en) * 1988-03-31 1991-06-11 Advanced Micro Devices, Inc. Gate array structure and process to allow optioning at second metal mask only
US5629837A (en) * 1995-09-20 1997-05-13 Oz Technologies, Inc. Button contact for surface mounting an IC device to a circuit board

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547604A (en) * 1963-08-08 1970-12-15 Ibm Functional components
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3615929A (en) * 1965-07-08 1971-10-26 Texas Instruments Inc Method of forming epitaxial region of predetermined thickness and article of manufacture
US3419765A (en) * 1965-10-01 1968-12-31 Texas Instruments Inc Ohmic contact to semiconductor devices
US3452219A (en) * 1966-07-28 1969-06-24 Motorola Inc Voltage controlled digital circuits
US3434020A (en) * 1966-12-30 1969-03-18 Texas Instruments Inc Ohmic contacts consisting of a first level of molybdenum-gold mixture of gold and vanadium and a second level of molybdenum-gold
US3536965A (en) * 1968-05-10 1970-10-27 Texas Instruments Inc Metallic contact and interconnection system for semiconductor devices
US3558992A (en) * 1968-06-17 1971-01-26 Rca Corp Integrated circuit having bonding pads over unused active area components
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
US3634929A (en) * 1968-11-02 1972-01-18 Tokyo Shibaura Electric Co Method of manufacturing semiconductor integrated circuits
US3573490A (en) * 1968-12-30 1971-04-06 Texas Instruments Inc Capacitor pull-up reigister bit
US3575732A (en) * 1969-06-06 1971-04-20 Microwave Ass Method of fabricating small-area semiconductor devices
US3648340A (en) * 1969-08-11 1972-03-14 Gen Motors Corp Hybrid solid-state voltage-variable tuning capacitor

Also Published As

Publication number Publication date
DE2336908B2 (de) 1974-09-26
NL7313827A (enExample) 1974-04-22
DE2336908A1 (de) 1974-05-09
CH564849A5 (enExample) 1975-07-31
FR2204044A1 (enExample) 1974-05-17
FR2204044B1 (enExample) 1978-06-30
US3877051A (en) 1975-04-08
BE805040A (fr) 1974-01-16
CA978279A (en) 1975-11-18
GB1421270A (en) 1976-01-14
US3982316A (en) 1976-09-28

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee