DE2328905A1 - Verfahren zur herstellung von metallkontakten an galliumphosphid-lumineszenzdioden mit geringen absorptionsverlusten - Google Patents

Verfahren zur herstellung von metallkontakten an galliumphosphid-lumineszenzdioden mit geringen absorptionsverlusten

Info

Publication number
DE2328905A1
DE2328905A1 DE2328905A DE2328905A DE2328905A1 DE 2328905 A1 DE2328905 A1 DE 2328905A1 DE 2328905 A DE2328905 A DE 2328905A DE 2328905 A DE2328905 A DE 2328905A DE 2328905 A1 DE2328905 A1 DE 2328905A1
Authority
DE
Germany
Prior art keywords
semiconductor body
metal contacts
heat sink
adhesive layer
alloyed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2328905A
Other languages
German (de)
English (en)
Inventor
Claus Dr Phil Weyrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE2328905A priority Critical patent/DE2328905A1/de
Priority to GB1693474A priority patent/GB1448510A/en
Priority to CH691674A priority patent/CH577236A5/xx
Priority to FR7418250A priority patent/FR2232903B3/fr
Priority to SE7407021A priority patent/SE388313B/xx
Priority to US05/474,663 priority patent/US3976813A/en
Priority to LU70218A priority patent/LU70218A1/xx
Priority to IT23547/74A priority patent/IT1014731B/it
Priority to NL7407558A priority patent/NL7407558A/xx
Priority to JP6452774A priority patent/JPS5033782A/ja
Priority to BE145140A priority patent/BE815991A/xx
Publication of DE2328905A1 publication Critical patent/DE2328905A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape

Landscapes

  • Die Bonding (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
DE2328905A 1973-06-06 1973-06-06 Verfahren zur herstellung von metallkontakten an galliumphosphid-lumineszenzdioden mit geringen absorptionsverlusten Pending DE2328905A1 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE2328905A DE2328905A1 (de) 1973-06-06 1973-06-06 Verfahren zur herstellung von metallkontakten an galliumphosphid-lumineszenzdioden mit geringen absorptionsverlusten
GB1693474A GB1448510A (en) 1973-06-06 1974-04-18 Electrically connecting a semiconductor body to a metal body capable of simultaneously serving as a heat sink and as an electrical contact having a low contact resistance
CH691674A CH577236A5 (cg-RX-API-DMAC10.html) 1973-06-06 1974-05-20
FR7418250A FR2232903B3 (cg-RX-API-DMAC10.html) 1973-06-06 1974-05-27
SE7407021A SE388313B (sv) 1973-06-06 1974-05-28 Forfarande for att pa en halvledarkropp framstella en elektrisk kontakt med lagt overgangsmotstand vilken lempar sig for luminescensdioder
US05/474,663 US3976813A (en) 1973-06-06 1974-05-30 Method of producing, metal contacts with low absorption losses on gallium phosphide luminescence diodes
LU70218A LU70218A1 (cg-RX-API-DMAC10.html) 1973-06-06 1974-06-04
IT23547/74A IT1014731B (it) 1973-06-06 1974-06-04 Dispositivo per realizzare su dio di luminescenti al fosfuro di gal lio contatti metallici con esigue perdite per assorbimetnto
NL7407558A NL7407558A (cg-RX-API-DMAC10.html) 1973-06-06 1974-06-05
JP6452774A JPS5033782A (cg-RX-API-DMAC10.html) 1973-06-06 1974-06-06
BE145140A BE815991A (fr) 1973-06-06 1974-06-06 Procede pour fabriquer des contacts metalliques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2328905A DE2328905A1 (de) 1973-06-06 1973-06-06 Verfahren zur herstellung von metallkontakten an galliumphosphid-lumineszenzdioden mit geringen absorptionsverlusten

Publications (1)

Publication Number Publication Date
DE2328905A1 true DE2328905A1 (de) 1974-12-12

Family

ID=5883256

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2328905A Pending DE2328905A1 (de) 1973-06-06 1973-06-06 Verfahren zur herstellung von metallkontakten an galliumphosphid-lumineszenzdioden mit geringen absorptionsverlusten

Country Status (11)

Country Link
US (1) US3976813A (cg-RX-API-DMAC10.html)
JP (1) JPS5033782A (cg-RX-API-DMAC10.html)
BE (1) BE815991A (cg-RX-API-DMAC10.html)
CH (1) CH577236A5 (cg-RX-API-DMAC10.html)
DE (1) DE2328905A1 (cg-RX-API-DMAC10.html)
FR (1) FR2232903B3 (cg-RX-API-DMAC10.html)
GB (1) GB1448510A (cg-RX-API-DMAC10.html)
IT (1) IT1014731B (cg-RX-API-DMAC10.html)
LU (1) LU70218A1 (cg-RX-API-DMAC10.html)
NL (1) NL7407558A (cg-RX-API-DMAC10.html)
SE (1) SE388313B (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50113243A (cg-RX-API-DMAC10.html) * 1974-02-13 1975-09-05
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
JP4119501B2 (ja) * 1997-07-10 2008-07-16 ローム株式会社 半導体発光素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3339274A (en) * 1964-03-16 1967-09-05 Hughes Aircraft Co Top contact for surface protected semiconductor devices
US3684930A (en) * 1970-12-28 1972-08-15 Gen Electric Ohmic contact for group iii-v p-types semiconductors

Also Published As

Publication number Publication date
FR2232903A1 (cg-RX-API-DMAC10.html) 1975-01-03
SE388313B (sv) 1976-09-27
IT1014731B (it) 1977-04-30
NL7407558A (cg-RX-API-DMAC10.html) 1974-12-10
SE7407021L (cg-RX-API-DMAC10.html) 1974-12-09
FR2232903B3 (cg-RX-API-DMAC10.html) 1977-03-18
JPS5033782A (cg-RX-API-DMAC10.html) 1975-04-01
US3976813A (en) 1976-08-24
CH577236A5 (cg-RX-API-DMAC10.html) 1976-06-30
BE815991A (fr) 1974-09-30
LU70218A1 (cg-RX-API-DMAC10.html) 1974-10-17
GB1448510A (en) 1976-09-08

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