DE2325598C2 - Photomaske - Google Patents
PhotomaskeInfo
- Publication number
- DE2325598C2 DE2325598C2 DE2325598A DE2325598A DE2325598C2 DE 2325598 C2 DE2325598 C2 DE 2325598C2 DE 2325598 A DE2325598 A DE 2325598A DE 2325598 A DE2325598 A DE 2325598A DE 2325598 C2 DE2325598 C2 DE 2325598C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- mask according
- substrate
- ruby
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 27
- 239000010979 ruby Substances 0.000 claims description 26
- 229910001750 ruby Inorganic materials 0.000 claims description 26
- 229910052594 sapphire Inorganic materials 0.000 claims description 25
- 239000010980 sapphire Substances 0.000 claims description 25
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000011651 chromium Substances 0.000 description 89
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000839 emulsion Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052566 spinel group Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00264653A US3815978A (en) | 1972-06-20 | 1972-06-20 | Durable see-through photoresist mask |
| US28465372A | 1972-08-20 | 1972-08-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2325598A1 DE2325598A1 (de) | 1974-01-10 |
| DE2325598C2 true DE2325598C2 (de) | 1983-09-15 |
Family
ID=26950682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2325598A Expired DE2325598C2 (de) | 1972-06-20 | 1973-05-19 | Photomaske |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3815978A (enExample) |
| DE (1) | DE2325598C2 (enExample) |
| FR (1) | FR2196487B1 (enExample) |
| GB (1) | GB1416899A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2643811C2 (de) * | 1975-10-28 | 1981-10-15 | Hughes Aircraft Co., Culver City, Calif. | Lithographie-Maske mit einer für Strahlung durchlässigen Membran und Verfahren zu ihrer Herstellung |
| US4063812A (en) * | 1976-08-12 | 1977-12-20 | International Business Machines Corporation | Projection printing system with an improved mask configuration |
| US4536240A (en) * | 1981-12-02 | 1985-08-20 | Advanced Semiconductor Products, Inc. | Method of forming thin optical membranes |
| US4666292A (en) * | 1984-08-24 | 1987-05-19 | Nippon Kogaku K.K. | Projection optical apparatus and a photographic mask therefor |
| DE59309954D1 (de) * | 1992-12-21 | 2000-03-16 | Balzers Hochvakuum | Optisches Bauelement, Verfahren zur Herstellung einer Schicht, Schicht bzw. Schichtsystem und Verwendung des Bauelementes |
| DE102008037465B4 (de) * | 2008-10-17 | 2019-06-19 | Kla-Tencor Mie Gmbh | Verfahren zur Bestimmung der Position von Materialkanten auf einer Maske für die Halbleiterherstellung |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508982A (en) * | 1967-01-03 | 1970-04-28 | Itt | Method of making an ultra-violet selective template |
| US3561963A (en) * | 1967-09-11 | 1971-02-09 | Signetics Corp | Transparent mask and method for making the same |
| SE349874B (enExample) * | 1968-07-03 | 1972-10-09 | Western Electric Co | |
| US3661436A (en) * | 1970-06-30 | 1972-05-09 | Ibm | Transparent fabrication masks utilizing masking material selected from the group consisting of spinels, perovskites, garnets, fluorides and oxy-fluorides |
-
1972
- 1972-06-20 US US00264653A patent/US3815978A/en not_active Expired - Lifetime
-
1973
- 1973-03-21 GB GB1353473A patent/GB1416899A/en not_active Expired
- 1973-05-19 DE DE2325598A patent/DE2325598C2/de not_active Expired
- 1973-05-25 FR FR7321359A patent/FR2196487B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2196487B1 (enExample) | 1983-10-07 |
| FR2196487A1 (enExample) | 1974-03-15 |
| GB1416899A (en) | 1975-12-10 |
| US3815978A (en) | 1974-06-11 |
| DE2325598A1 (de) | 1974-01-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |