DE2324030A1 - Thermo-elektrostatisch verbundene halbleitervorrichtung - Google Patents
Thermo-elektrostatisch verbundene halbleitervorrichtungInfo
- Publication number
- DE2324030A1 DE2324030A1 DE2324030A DE2324030A DE2324030A1 DE 2324030 A1 DE2324030 A1 DE 2324030A1 DE 2324030 A DE2324030 A DE 2324030A DE 2324030 A DE2324030 A DE 2324030A DE 2324030 A1 DE2324030 A1 DE 2324030A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- glass
- contact
- carrier part
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 121
- 239000011521 glass Substances 0.000 claims description 89
- 239000004020 conductor Substances 0.000 claims description 26
- 238000001465 metallisation Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 230000005686 electrostatic field Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000587161 Gomphocarpus Species 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Joining Of Glass To Other Materials (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25387972A | 1972-05-16 | 1972-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2324030A1 true DE2324030A1 (de) | 1973-11-29 |
Family
ID=22962085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2324030A Pending DE2324030A1 (de) | 1972-05-16 | 1973-05-12 | Thermo-elektrostatisch verbundene halbleitervorrichtung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3781978A (en, 2012) |
| JP (1) | JPS4950871A (en, 2012) |
| DE (1) | DE2324030A1 (en, 2012) |
| FR (1) | FR2230076B3 (en, 2012) |
| GB (1) | GB1377930A (en, 2012) |
| IT (1) | IT987625B (en, 2012) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3953920A (en) * | 1975-05-14 | 1976-05-04 | International Telephone & Telegraph Corporation | Method of making a transducer |
| US4142662A (en) * | 1978-01-27 | 1979-03-06 | Bell Telephone Laboratories, Incorporated | Method of bonding microelectronic chips |
| JPS5787321A (en) | 1980-11-21 | 1982-05-31 | Nissan Motor Co Ltd | Fusion-bonding method of skin material and foamed resin sheet |
| US4407440A (en) * | 1981-02-23 | 1983-10-04 | Mesa Technology | Semiconductor die bonding machine |
| US5182424A (en) * | 1989-10-31 | 1993-01-26 | Vlastimil Frank | Module encapsulation by induction heating |
| US5683601A (en) * | 1994-10-24 | 1997-11-04 | Panasonic Technologies, Inc. | Laser ablation forward metal deposition with electrostatic assisted bonding |
| US5935462A (en) * | 1994-10-24 | 1999-08-10 | Matsushita Electric Industrial Co., Ltd. | Repair of metal lines by electrostatically assisted laser ablative deposition |
| US5567336A (en) * | 1994-10-24 | 1996-10-22 | Matsushita Electric Industrial Co., Ltd. | Laser ablation forward metal deposition with electrostatic assisted bonding |
| US6060127A (en) * | 1998-03-31 | 2000-05-09 | Matsushita Electric Industrial Co., Ltd. | Mechanically restricted laser deposition |
| US6180912B1 (en) | 1998-03-31 | 2001-01-30 | Matsushita Electric Industrial Co., Ltd. | Fan-out beams for repairing an open defect |
| US9776270B2 (en) * | 2013-10-01 | 2017-10-03 | Globalfoundries Inc. | Chip joining by induction heating |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US27287A (en) * | 1860-02-28 | Pen hack | ||
| US3256598A (en) * | 1963-07-25 | 1966-06-21 | Martin Marietta Corp | Diffusion bonding |
| GB1138401A (en) * | 1965-05-06 | 1969-01-01 | Mallory & Co Inc P R | Bonding |
| US3417459A (en) * | 1965-05-06 | 1968-12-24 | Mallory & Co Inc P R | Bonding electrically conductive metals to insulators |
| US3537175A (en) * | 1966-11-09 | 1970-11-03 | Advalloy Inc | Lead frame for semiconductor devices and method for making same |
| US3506424A (en) * | 1967-05-03 | 1970-04-14 | Mallory & Co Inc P R | Bonding an insulator to an insulator |
| US3589965A (en) * | 1968-11-27 | 1971-06-29 | Mallory & Co Inc P R | Bonding an insulator to an insulator |
-
1972
- 1972-05-16 US US3781978D patent/US3781978A/en not_active Expired - Lifetime
-
1973
- 1973-05-11 GB GB2262773A patent/GB1377930A/en not_active Expired
- 1973-05-11 IT IT2395673A patent/IT987625B/it active
- 1973-05-12 DE DE2324030A patent/DE2324030A1/de active Pending
- 1973-05-15 JP JP5325873A patent/JPS4950871A/ja active Pending
- 1973-05-16 FR FR7317639A patent/FR2230076B3/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2230076B3 (en, 2012) | 1976-04-30 |
| JPS4950871A (en, 2012) | 1974-05-17 |
| GB1377930A (en) | 1974-12-18 |
| US3781978A (en) | 1974-01-01 |
| IT987625B (it) | 1975-03-20 |
| FR2230076A1 (en, 2012) | 1974-12-13 |
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