DE2321798A1 - Verfahren zum selektiven entfernen von teilen einer elektrisch leitenden wolframschicht - Google Patents
Verfahren zum selektiven entfernen von teilen einer elektrisch leitenden wolframschichtInfo
- Publication number
- DE2321798A1 DE2321798A1 DE2321798A DE2321798A DE2321798A1 DE 2321798 A1 DE2321798 A1 DE 2321798A1 DE 2321798 A DE2321798 A DE 2321798A DE 2321798 A DE2321798 A DE 2321798A DE 2321798 A1 DE2321798 A1 DE 2321798A1
- Authority
- DE
- Germany
- Prior art keywords
- electrolyte
- tungsten layer
- layer
- tungsten
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 21
- 229910052721 tungsten Inorganic materials 0.000 description 20
- 239000010937 tungsten Substances 0.000 description 20
- 238000005530 etching Methods 0.000 description 18
- 239000003792 electrolyte Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000000866 electrolytic etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- NTBYNMBEYCCFPS-UHFFFAOYSA-N azane boric acid Chemical class N.N.N.OB(O)O NTBYNMBEYCCFPS-UHFFFAOYSA-N 0.000 description 1
- ZSJHIZJESFFXAU-UHFFFAOYSA-N boric acid;phosphoric acid Chemical compound OB(O)O.OP(O)(O)=O ZSJHIZJESFFXAU-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AUTNMGCKBXKHNV-UHFFFAOYSA-P diazanium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [NH4+].[NH4+].O1B([O-])OB2OB([O-])OB1O2 AUTNMGCKBXKHNV-UHFFFAOYSA-P 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000474 mercury oxide Inorganic materials 0.000 description 1
- UKWHYYKOEPRTIC-UHFFFAOYSA-N mercury(ii) oxide Chemical compound [Hg]=O UKWHYYKOEPRTIC-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/08—Etching of refractory metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25025872A | 1972-05-04 | 1972-05-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2321798A1 true DE2321798A1 (de) | 1973-11-15 |
Family
ID=22946995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2321798A Pending DE2321798A1 (de) | 1972-05-04 | 1973-04-30 | Verfahren zum selektiven entfernen von teilen einer elektrisch leitenden wolframschicht |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3785945A (enExample) |
| JP (1) | JPS4954240A (enExample) |
| BE (1) | BE798985A (enExample) |
| DE (1) | DE2321798A1 (enExample) |
| FR (1) | FR2183037B1 (enExample) |
| GB (1) | GB1425219A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2901697A1 (de) * | 1978-01-17 | 1979-07-19 | Hitachi Ltd | Verfahren zur ausbildung von verbindungsleitungen |
| DE102004060507A1 (de) * | 2004-12-16 | 2006-06-29 | Forschungszentrum Karlsruhe Gmbh | Verfahren zur elektrochemischen Abtragung von Refraktärmetallen oder -legierungen und Lösung zur Durchführung dieses Verfahrens |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4098659A (en) * | 1977-07-13 | 1978-07-04 | The United States Of America As Represented By The Secretary Of The Air Force | Electrochemical milling process to prevent localized heating |
| US4629539A (en) * | 1982-07-08 | 1986-12-16 | Tdk Corporation | Metal layer patterning method |
| HU190811B (en) * | 1982-09-01 | 1986-11-28 | Mta Mueszaki Fizikai Kutato Intezet,Hu | Method for decomposing hard metal wastes by anodic oxidation and dissolving |
| US5374338A (en) * | 1993-10-27 | 1994-12-20 | International Business Machines Corporation | Selective electroetch of copper and other metals |
| US20060021974A1 (en) * | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| JP4900351B2 (ja) * | 2008-09-19 | 2012-03-21 | 住友電気工業株式会社 | 構造体の製造方法および構造体の製造装置 |
-
1972
- 1972-05-04 US US00250258A patent/US3785945A/en not_active Expired - Lifetime
-
1973
- 1973-04-26 FR FR7315134A patent/FR2183037B1/fr not_active Expired
- 1973-04-30 DE DE2321798A patent/DE2321798A1/de active Pending
- 1973-05-01 GB GB2060373A patent/GB1425219A/en not_active Expired
- 1973-05-02 BE BE130647A patent/BE798985A/xx unknown
- 1973-05-02 JP JP48048599A patent/JPS4954240A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2901697A1 (de) * | 1978-01-17 | 1979-07-19 | Hitachi Ltd | Verfahren zur ausbildung von verbindungsleitungen |
| DE102004060507A1 (de) * | 2004-12-16 | 2006-06-29 | Forschungszentrum Karlsruhe Gmbh | Verfahren zur elektrochemischen Abtragung von Refraktärmetallen oder -legierungen und Lösung zur Durchführung dieses Verfahrens |
Also Published As
| Publication number | Publication date |
|---|---|
| BE798985A (fr) | 1973-08-31 |
| FR2183037B1 (enExample) | 1976-04-09 |
| US3785945A (en) | 1974-01-15 |
| FR2183037A1 (enExample) | 1973-12-14 |
| GB1425219A (en) | 1976-02-18 |
| JPS4954240A (enExample) | 1974-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |