GB1425219A - Methods for removing parts of tungsten films - Google Patents
Methods for removing parts of tungsten filmsInfo
- Publication number
- GB1425219A GB1425219A GB2060373A GB2060373A GB1425219A GB 1425219 A GB1425219 A GB 1425219A GB 2060373 A GB2060373 A GB 2060373A GB 2060373 A GB2060373 A GB 2060373A GB 1425219 A GB1425219 A GB 1425219A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- substrate
- tungsten
- electrolyte
- aqueous electrolyte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052721 tungsten Inorganic materials 0.000 title abstract 4
- 239000010937 tungsten Substances 0.000 title abstract 4
- 239000003792 electrolyte Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- 150000001642 boronic acid derivatives Chemical class 0.000 abstract 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 abstract 1
- AUTNMGCKBXKHNV-UHFFFAOYSA-P diazanium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [NH4+].[NH4+].O1B([O-])OB2OB([O-])OB1O2 AUTNMGCKBXKHNV-UHFFFAOYSA-P 0.000 abstract 1
- 235000021317 phosphate Nutrition 0.000 abstract 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/08—Etching of refractory metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25025872A | 1972-05-04 | 1972-05-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1425219A true GB1425219A (en) | 1976-02-18 |
Family
ID=22946995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2060373A Expired GB1425219A (en) | 1972-05-04 | 1973-05-01 | Methods for removing parts of tungsten films |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3785945A (enExample) |
| JP (1) | JPS4954240A (enExample) |
| BE (1) | BE798985A (enExample) |
| DE (1) | DE2321798A1 (enExample) |
| FR (1) | FR2183037B1 (enExample) |
| GB (1) | GB1425219A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4098659A (en) * | 1977-07-13 | 1978-07-04 | The United States Of America As Represented By The Secretary Of The Air Force | Electrochemical milling process to prevent localized heating |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5496775A (en) * | 1978-01-17 | 1979-07-31 | Hitachi Ltd | Method of forming circuit |
| US4629539A (en) * | 1982-07-08 | 1986-12-16 | Tdk Corporation | Metal layer patterning method |
| HU190811B (en) * | 1982-09-01 | 1986-11-28 | Mta Mueszaki Fizikai Kutato Intezet,Hu | Method for decomposing hard metal wastes by anodic oxidation and dissolving |
| US5374338A (en) * | 1993-10-27 | 1994-12-20 | International Business Machines Corporation | Selective electroetch of copper and other metals |
| US20060021974A1 (en) * | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| DE102004060507A1 (de) * | 2004-12-16 | 2006-06-29 | Forschungszentrum Karlsruhe Gmbh | Verfahren zur elektrochemischen Abtragung von Refraktärmetallen oder -legierungen und Lösung zur Durchführung dieses Verfahrens |
| JP4900351B2 (ja) * | 2008-09-19 | 2012-03-21 | 住友電気工業株式会社 | 構造体の製造方法および構造体の製造装置 |
-
1972
- 1972-05-04 US US00250258A patent/US3785945A/en not_active Expired - Lifetime
-
1973
- 1973-04-26 FR FR7315134A patent/FR2183037B1/fr not_active Expired
- 1973-04-30 DE DE2321798A patent/DE2321798A1/de active Pending
- 1973-05-01 GB GB2060373A patent/GB1425219A/en not_active Expired
- 1973-05-02 BE BE130647A patent/BE798985A/xx unknown
- 1973-05-02 JP JP48048599A patent/JPS4954240A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4098659A (en) * | 1977-07-13 | 1978-07-04 | The United States Of America As Represented By The Secretary Of The Air Force | Electrochemical milling process to prevent localized heating |
Also Published As
| Publication number | Publication date |
|---|---|
| BE798985A (fr) | 1973-08-31 |
| FR2183037B1 (enExample) | 1976-04-09 |
| US3785945A (en) | 1974-01-15 |
| FR2183037A1 (enExample) | 1973-12-14 |
| JPS4954240A (enExample) | 1974-05-27 |
| DE2321798A1 (de) | 1973-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |