DE2310724C3 - Phototransistor und Verfahren zu seiner Herstellung - Google Patents

Phototransistor und Verfahren zu seiner Herstellung

Info

Publication number
DE2310724C3
DE2310724C3 DE2310724A DE2310724A DE2310724C3 DE 2310724 C3 DE2310724 C3 DE 2310724C3 DE 2310724 A DE2310724 A DE 2310724A DE 2310724 A DE2310724 A DE 2310724A DE 2310724 C3 DE2310724 C3 DE 2310724C3
Authority
DE
Germany
Prior art keywords
base
emitter
phototransistor
area
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2310724A
Other languages
German (de)
English (en)
Other versions
DE2310724A1 (de
DE2310724B2 (de
Inventor
Saburo Itami Hyogo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE2310724A1 publication Critical patent/DE2310724A1/de
Publication of DE2310724B2 publication Critical patent/DE2310724B2/de
Application granted granted Critical
Publication of DE2310724C3 publication Critical patent/DE2310724C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
DE2310724A 1972-03-03 1973-03-03 Phototransistor und Verfahren zu seiner Herstellung Expired DE2310724C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2200872A JPS5641186B2 (enExample) 1972-03-03 1972-03-03

Publications (3)

Publication Number Publication Date
DE2310724A1 DE2310724A1 (de) 1973-09-13
DE2310724B2 DE2310724B2 (de) 1978-04-20
DE2310724C3 true DE2310724C3 (de) 1983-11-10

Family

ID=12070962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2310724A Expired DE2310724C3 (de) 1972-03-03 1973-03-03 Phototransistor und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (1) US3794891A (enExample)
JP (1) JPS5641186B2 (enExample)
DE (1) DE2310724C3 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958264A (en) * 1974-06-24 1976-05-18 International Business Machines Corporation Space-charge-limited phototransistor
JPS5814060B2 (ja) * 1978-03-27 1983-03-17 青木 勇 鉄心插入機
US4720642A (en) * 1983-03-02 1988-01-19 Marks Alvin M Femto Diode and applications
US4212023A (en) * 1978-11-30 1980-07-08 General Electric Company Bilateral phototransistor
DE2922301C2 (de) * 1979-05-31 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4698653A (en) * 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
NL8003906A (nl) * 1980-07-07 1982-02-01 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
JPS59125672A (ja) * 1983-01-07 1984-07-20 Toshiba Corp 半導体装置
NL8700370A (nl) * 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
JP2578791Y2 (ja) * 1991-09-11 1998-08-13 勇 青木 鉄心挿入機
JPH0575159A (ja) * 1991-09-18 1993-03-26 Nec Corp 光半導体装置
TWI437222B (zh) * 2009-09-07 2014-05-11 國立中央大學 用於測量生物分子之螢光檢測系統、方法及裝置
ITTO20110210A1 (it) * 2011-03-09 2012-09-10 Francesco Agus Cella fotovoltaica con giunzione p-n distribuita in modo spaziale nel substrato di semiconduttore

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3222530A (en) * 1961-06-07 1965-12-07 Philco Corp Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers
NL296170A (enExample) * 1962-10-04
NL6709192A (enExample) * 1967-07-01 1969-01-03
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
JPS4944530B1 (enExample) * 1970-01-23 1974-11-28
US3714526A (en) * 1971-02-19 1973-01-30 Nasa Phototransistor

Also Published As

Publication number Publication date
US3794891A (en) 1974-02-26
DE2310724A1 (de) 1973-09-13
DE2310724B2 (de) 1978-04-20
JPS5641186B2 (enExample) 1981-09-26
JPS4942294A (enExample) 1974-04-20

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Legal Events

Date Code Title Description
8281 Inventor (new situation)

Free format text: TAKAMIYA, SABURO, ITAMI, HYOGO, JP

C3 Grant after two publication steps (3rd publication)