DE2310453C3 - Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes - Google Patents

Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes

Info

Publication number
DE2310453C3
DE2310453C3 DE2310453A DE2310453A DE2310453C3 DE 2310453 C3 DE2310453 C3 DE 2310453C3 DE 2310453 A DE2310453 A DE 2310453A DE 2310453 A DE2310453 A DE 2310453A DE 2310453 C3 DE2310453 C3 DE 2310453C3
Authority
DE
Germany
Prior art keywords
semiconductor
doped
junction
sulfur
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2310453A
Other languages
German (de)
English (en)
Other versions
DE2310453B2 (de
DE2310453A1 (de
Inventor
Karlheinz Dipl.-Phys. Dr. 4785 Belecke Sommer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE2310453A priority Critical patent/DE2310453C3/de
Priority to GB939874A priority patent/GB1457909A/en
Priority to FR7407110A priority patent/FR2220096B1/fr
Priority to JP49023470A priority patent/JPS5048882A/ja
Priority to US448042A priority patent/US3919010A/en
Publication of DE2310453A1 publication Critical patent/DE2310453A1/de
Publication of DE2310453B2 publication Critical patent/DE2310453B2/de
Application granted granted Critical
Publication of DE2310453C3 publication Critical patent/DE2310453C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE2310453A 1973-03-02 1973-03-02 Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes Expired DE2310453C3 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE2310453A DE2310453C3 (de) 1973-03-02 1973-03-02 Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes
GB939874A GB1457909A (en) 1973-03-02 1974-03-01 Method for producing a semiconductor component protected against excess voltages
FR7407110A FR2220096B1 (enExample) 1973-03-02 1974-03-01
JP49023470A JPS5048882A (enExample) 1973-03-02 1974-03-01
US448042A US3919010A (en) 1973-03-02 1974-03-04 Method for producing a semiconductor device which is protected against overvoltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2310453A DE2310453C3 (de) 1973-03-02 1973-03-02 Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes

Publications (3)

Publication Number Publication Date
DE2310453A1 DE2310453A1 (de) 1974-09-26
DE2310453B2 DE2310453B2 (de) 1980-09-11
DE2310453C3 true DE2310453C3 (de) 1981-11-19

Family

ID=5873620

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2310453A Expired DE2310453C3 (de) 1973-03-02 1973-03-02 Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes

Country Status (5)

Country Link
US (1) US3919010A (enExample)
JP (1) JPS5048882A (enExample)
DE (1) DE2310453C3 (enExample)
FR (1) FR2220096B1 (enExample)
GB (1) GB1457909A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3158738B2 (ja) * 1992-08-17 2001-04-23 富士電機株式会社 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路
DE4320780B4 (de) * 1993-06-23 2007-07-12 Robert Bosch Gmbh Halbleiteranordnung und Verfahren zur Herstellung
US5578506A (en) * 1995-02-27 1996-11-26 Alliedsignal Inc. Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device
US5815359A (en) * 1995-09-08 1998-09-29 Texas Instruments Incorporated Semiconductor device providing overvoltage protection against electrical surges of positive and negative polarities, such as caused by lightning
DE19942679C1 (de) * 1999-09-07 2001-04-05 Infineon Technologies Ag Verfahren zum Herstellen eines hochvolttauglichen Randabschlusses bei einem nach dem Prinzip der lateralen Ladungskompensation vorgefertigten Grundmaterialwafer
JP4126872B2 (ja) 2000-12-12 2008-07-30 サンケン電気株式会社 定電圧ダイオード
US9577079B2 (en) 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954308A (en) * 1956-05-21 1960-09-27 Ibm Semiconductor impurity diffusion
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
US3573115A (en) * 1968-04-22 1971-03-30 Int Rectifier Corp Sealed tube diffusion process

Also Published As

Publication number Publication date
FR2220096B1 (enExample) 1978-08-11
FR2220096A1 (enExample) 1974-09-27
DE2310453B2 (de) 1980-09-11
GB1457909A (en) 1976-12-08
US3919010A (en) 1975-11-11
JPS5048882A (enExample) 1975-05-01
DE2310453A1 (de) 1974-09-26

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Legal Events

Date Code Title Description
OF Willingness to grant licences before publication of examined application
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee