JPS5048882A - - Google Patents

Info

Publication number
JPS5048882A
JPS5048882A JP49023470A JP2347074A JPS5048882A JP S5048882 A JPS5048882 A JP S5048882A JP 49023470 A JP49023470 A JP 49023470A JP 2347074 A JP2347074 A JP 2347074A JP S5048882 A JPS5048882 A JP S5048882A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49023470A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5048882A publication Critical patent/JPS5048882A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP49023470A 1973-03-02 1974-03-01 Pending JPS5048882A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2310453A DE2310453C3 (de) 1973-03-02 1973-03-02 Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
JPS5048882A true JPS5048882A (ja) 1975-05-01

Family

ID=5873620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49023470A Pending JPS5048882A (ja) 1973-03-02 1974-03-01

Country Status (5)

Country Link
US (1) US3919010A (ja)
JP (1) JPS5048882A (ja)
DE (1) DE2310453C3 (ja)
FR (1) FR2220096B1 (ja)
GB (1) GB1457909A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7199402B2 (en) 2000-12-12 2007-04-03 Sanken Electric Co., Ltd. Semiconductor devices

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3158738B2 (ja) * 1992-08-17 2001-04-23 富士電機株式会社 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路
DE4320780B4 (de) * 1993-06-23 2007-07-12 Robert Bosch Gmbh Halbleiteranordnung und Verfahren zur Herstellung
US5578506A (en) * 1995-02-27 1996-11-26 Alliedsignal Inc. Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device
US5815359A (en) * 1995-09-08 1998-09-29 Texas Instruments Incorporated Semiconductor device providing overvoltage protection against electrical surges of positive and negative polarities, such as caused by lightning
DE19942679C1 (de) * 1999-09-07 2001-04-05 Infineon Technologies Ag Verfahren zum Herstellen eines hochvolttauglichen Randabschlusses bei einem nach dem Prinzip der lateralen Ladungskompensation vorgefertigten Grundmaterialwafer
US9577079B2 (en) * 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954308A (en) * 1956-05-21 1960-09-27 Ibm Semiconductor impurity diffusion
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
US3573115A (en) * 1968-04-22 1971-03-30 Int Rectifier Corp Sealed tube diffusion process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7199402B2 (en) 2000-12-12 2007-04-03 Sanken Electric Co., Ltd. Semiconductor devices

Also Published As

Publication number Publication date
US3919010A (en) 1975-11-11
FR2220096A1 (ja) 1974-09-27
DE2310453B2 (de) 1980-09-11
DE2310453A1 (de) 1974-09-26
FR2220096B1 (ja) 1978-08-11
GB1457909A (en) 1976-12-08
DE2310453C3 (de) 1981-11-19

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