DE2309615A1 - Verfahren zum herstellen einer phosphorsilicatglasschicht durch kathodenzerstaeubung - Google Patents

Verfahren zum herstellen einer phosphorsilicatglasschicht durch kathodenzerstaeubung

Info

Publication number
DE2309615A1
DE2309615A1 DE19732309615 DE2309615A DE2309615A1 DE 2309615 A1 DE2309615 A1 DE 2309615A1 DE 19732309615 DE19732309615 DE 19732309615 DE 2309615 A DE2309615 A DE 2309615A DE 2309615 A1 DE2309615 A1 DE 2309615A1
Authority
DE
Germany
Prior art keywords
cathode
anode
glass layer
phosphosilicate glass
containers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732309615
Other languages
German (de)
English (en)
Inventor
Thomas Nolan Kennedy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2309615A1 publication Critical patent/DE2309615A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE19732309615 1972-03-01 1973-02-27 Verfahren zum herstellen einer phosphorsilicatglasschicht durch kathodenzerstaeubung Pending DE2309615A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23086972A 1972-03-01 1972-03-01

Publications (1)

Publication Number Publication Date
DE2309615A1 true DE2309615A1 (de) 1973-09-06

Family

ID=22866903

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732309615 Pending DE2309615A1 (de) 1972-03-01 1973-02-27 Verfahren zum herstellen einer phosphorsilicatglasschicht durch kathodenzerstaeubung

Country Status (5)

Country Link
US (1) US3743587A (enExample)
JP (1) JPS5611753B2 (enExample)
DE (1) DE2309615A1 (enExample)
FR (1) FR2174569A5 (enExample)
GB (1) GB1387774A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3636524A1 (de) * 1986-10-27 1988-04-28 Vtu Angel Kancev Einrichtung zum auftragen von ueberzuegen im vakuum durch magnetronzerstaeubung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4515668A (en) * 1984-04-25 1985-05-07 Honeywell Inc. Method of forming a dielectric layer comprising a gettering material
GB8504458D0 (en) * 1985-02-21 1985-03-27 Gen Eng Radcliffe Ltd Producing multi-layered coatings
US4731293A (en) * 1986-06-20 1988-03-15 American Telephone And Telegraph Company, At&T Bell Laboratories Fabrication of devices using phosphorus glasses
US5047369A (en) * 1989-05-01 1991-09-10 At&T Bell Laboratories Fabrication of semiconductor devices using phosphosilicate glasses
CN102701569B (zh) * 2012-01-12 2015-01-07 上海华力微电子有限公司 改善高密度等离子体化学气相淀积的磷硅玻璃形貌的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3636524A1 (de) * 1986-10-27 1988-04-28 Vtu Angel Kancev Einrichtung zum auftragen von ueberzuegen im vakuum durch magnetronzerstaeubung

Also Published As

Publication number Publication date
US3743587A (en) 1973-07-03
GB1387774A (en) 1975-03-19
FR2174569A5 (enExample) 1973-10-12
JPS48102576A (enExample) 1973-12-22
JPS5611753B2 (enExample) 1981-03-17

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Legal Events

Date Code Title Description
OHJ Non-payment of the annual fee