DE2241919A1 - Feldeffekttransistor und verfahren zu dessen herstellung - Google Patents
Feldeffekttransistor und verfahren zu dessen herstellungInfo
- Publication number
- DE2241919A1 DE2241919A1 DE2241919A DE2241919A DE2241919A1 DE 2241919 A1 DE2241919 A1 DE 2241919A1 DE 2241919 A DE2241919 A DE 2241919A DE 2241919 A DE2241919 A DE 2241919A DE 2241919 A1 DE2241919 A1 DE 2241919A1
- Authority
- DE
- Germany
- Prior art keywords
- oxide layer
- layer
- source
- over
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 34
- 150000004767 nitrides Chemical class 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000011109 contamination Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 56
- 239000000377 silicon dioxide Substances 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- 235000012239 silicon dioxide Nutrition 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17506471A | 1971-08-26 | 1971-08-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2241919A1 true DE2241919A1 (de) | 1973-03-08 |
Family
ID=22638709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2241919A Pending DE2241919A1 (de) | 1971-08-26 | 1972-08-25 | Feldeffekttransistor und verfahren zu dessen herstellung |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS4831885A (enrdf_load_html_response) |
| DE (1) | DE2241919A1 (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS502479A (enrdf_load_html_response) * | 1973-05-07 | 1975-01-11 | ||
| JPS5558682U (enrdf_load_html_response) * | 1978-10-13 | 1980-04-21 |
-
1972
- 1972-08-25 DE DE2241919A patent/DE2241919A1/de active Pending
- 1972-08-26 JP JP47085019A patent/JPS4831885A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4831885A (enrdf_load_html_response) | 1973-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69029618T2 (de) | Verfahren zur Herstellung nichtflüchtiger Halbleiterspeicher | |
| EP0239652B1 (de) | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem bipolaren Planartransistor | |
| DE69729963T2 (de) | Halbleiterbauelement mit isoliertem gatter und verfahren zu deren herstellung | |
| DE2745857A1 (de) | Verfahren zur herstellung einer halbleiteranordnung | |
| EP0032550A1 (de) | Verfahren zur Herstellung einer bipolaren, vertikalen PNP-Transistorstruktur | |
| DE3222805A1 (de) | Verfahren zur herstellung einer mos-schaltung in integrierter schaltungstechnik auf einem siliziumsubstrat | |
| EP0033003B1 (de) | Zweifach diffundierter Metalloxidsilicium-Feldeffekttransistor und Verfahren zu seiner Herstellung | |
| DE2922014A1 (de) | Verfahren zur herstellung von vlsi-schaltungen | |
| DE3788470T2 (de) | Verfahren zur Herstellung eines Feldeffekttransistors mit isoliertem Gate. | |
| DE2824419A1 (de) | Halbleitervorrichtung und verfahren zu deren herstellung | |
| DE3540422C2 (de) | Verfahren zum Herstellen integrierter Strukturen mit nicht-flüchtigen Speicherzellen, die selbst-ausgerichtete Siliciumschichten und dazugehörige Transistoren aufweisen | |
| DE2922016A1 (de) | Vlsi-schaltungen | |
| DE69016840T2 (de) | Verfahren zur Herstellung eines lateralen Bipolartransistors. | |
| DE3131746A1 (de) | "verfahren zur herstellung einer halbleitereinheit" | |
| DE1564829C3 (de) | Verfahren zum Herstellen eines Feldeffekttransistors | |
| DE69113673T2 (de) | Halbleiterbauelement mit MOS-Transistoren und Verfahren zu dessen Herstellung. | |
| DE69033593T2 (de) | Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einer Isolationszone | |
| DE2752335C3 (de) | Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors mit einem vertikalen Kanal | |
| DE69128406T2 (de) | Lateraler MOSFET und Verfahren zur Herstellung | |
| EP0103653B1 (de) | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem bipolaren Planartransistor | |
| EP0270703B1 (de) | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem bipolaren Planartransistor | |
| DE2453528C2 (de) | Maskierungsverfahren | |
| DE2824026A1 (de) | Verfahren zum herstellen eines sperrschicht-feldeffekttransistors | |
| DE2241919A1 (de) | Feldeffekttransistor und verfahren zu dessen herstellung | |
| DE2059506C2 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung |