DE2238486A1 - Thyristor - Google Patents

Thyristor

Info

Publication number
DE2238486A1
DE2238486A1 DE2238486A DE2238486A DE2238486A1 DE 2238486 A1 DE2238486 A1 DE 2238486A1 DE 2238486 A DE2238486 A DE 2238486A DE 2238486 A DE2238486 A DE 2238486A DE 2238486 A1 DE2238486 A1 DE 2238486A1
Authority
DE
Germany
Prior art keywords
thyristor
base
zone
area
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2238486A
Other languages
German (de)
English (en)
Inventor
Karl Peter Dipl Phys Frohmader
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE2238486A priority Critical patent/DE2238486A1/de
Priority to JP48087224A priority patent/JPS4953783A/ja
Publication of DE2238486A1 publication Critical patent/DE2238486A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors

Landscapes

  • Thyristors (AREA)
DE2238486A 1972-08-04 1972-08-04 Thyristor Pending DE2238486A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE2238486A DE2238486A1 (de) 1972-08-04 1972-08-04 Thyristor
JP48087224A JPS4953783A (enrdf_load_stackoverflow) 1972-08-04 1973-08-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2238486A DE2238486A1 (de) 1972-08-04 1972-08-04 Thyristor

Publications (1)

Publication Number Publication Date
DE2238486A1 true DE2238486A1 (de) 1974-02-14

Family

ID=5852701

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2238486A Pending DE2238486A1 (de) 1972-08-04 1972-08-04 Thyristor

Country Status (2)

Country Link
JP (1) JPS4953783A (enrdf_load_stackoverflow)
DE (1) DE2238486A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1124260A3 (en) * 2000-02-08 2004-03-10 Ngk Insulators, Ltd. Semiconductor device with reverse conducting faculty

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1124260A3 (en) * 2000-02-08 2004-03-10 Ngk Insulators, Ltd. Semiconductor device with reverse conducting faculty

Also Published As

Publication number Publication date
JPS4953783A (enrdf_load_stackoverflow) 1974-05-24

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