DE2230749C3 - Verfahren zum Herstellen von Halbleiterbauelementen - Google Patents

Verfahren zum Herstellen von Halbleiterbauelementen

Info

Publication number
DE2230749C3
DE2230749C3 DE2230749A DE2230749A DE2230749C3 DE 2230749 C3 DE2230749 C3 DE 2230749C3 DE 2230749 A DE2230749 A DE 2230749A DE 2230749 A DE2230749 A DE 2230749A DE 2230749 C3 DE2230749 C3 DE 2230749C3
Authority
DE
Germany
Prior art keywords
diffusion
gold
carried out
period
hydrofluoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2230749A
Other languages
German (de)
English (en)
Other versions
DE2230749A1 (de
DE2230749B2 (de
Inventor
Horst Gesing
Rigobert Schimmer
Manfred Streit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE2230749A priority Critical patent/DE2230749C3/de
Priority to BE132534A priority patent/BE801229A/xx
Priority to JP48069911A priority patent/JPS4964371A/ja
Priority to GB2989273A priority patent/GB1440234A/en
Priority to US373274A priority patent/US3867203A/en
Publication of DE2230749A1 publication Critical patent/DE2230749A1/de
Publication of DE2230749B2 publication Critical patent/DE2230749B2/de
Application granted granted Critical
Publication of DE2230749C3 publication Critical patent/DE2230749C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DE2230749A 1972-06-23 1972-06-23 Verfahren zum Herstellen von Halbleiterbauelementen Expired DE2230749C3 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE2230749A DE2230749C3 (de) 1972-06-23 1972-06-23 Verfahren zum Herstellen von Halbleiterbauelementen
BE132534A BE801229A (fr) 1972-06-23 1973-06-21 Procede pour l'execution de composants a semi-conducteurs
JP48069911A JPS4964371A (en:Method) 1972-06-23 1973-06-22
GB2989273A GB1440234A (en) 1972-06-23 1973-06-22 Method of producing a semiconductor component
US373274A US3867203A (en) 1972-06-23 1973-06-25 Method for producing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2230749A DE2230749C3 (de) 1972-06-23 1972-06-23 Verfahren zum Herstellen von Halbleiterbauelementen

Publications (3)

Publication Number Publication Date
DE2230749A1 DE2230749A1 (de) 1974-01-10
DE2230749B2 DE2230749B2 (de) 1978-03-30
DE2230749C3 true DE2230749C3 (de) 1978-11-30

Family

ID=5848579

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2230749A Expired DE2230749C3 (de) 1972-06-23 1972-06-23 Verfahren zum Herstellen von Halbleiterbauelementen

Country Status (5)

Country Link
US (1) US3867203A (en:Method)
JP (1) JPS4964371A (en:Method)
BE (1) BE801229A (en:Method)
DE (1) DE2230749C3 (en:Method)
GB (1) GB1440234A (en:Method)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2610942C2 (de) * 1976-03-16 1983-04-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten
FR2514558A1 (fr) * 1981-10-13 1983-04-15 Silicium Semiconducteur Ssc Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium
US5223442A (en) * 1988-04-08 1993-06-29 Kabushiki Kaisha Toshiba Method of making a semiconductor device of a high withstand voltage
DE3815615A1 (de) * 1988-05-07 1989-11-16 Bosch Gmbh Robert Verfahren zur herstellung einer hochsperrenden leistungsdiode
US5504016A (en) * 1991-03-29 1996-04-02 National Semiconductor Corporation Method of manufacturing semiconductor device structures utilizing predictive dopant-dopant interactions
JP2006126234A (ja) * 2004-10-26 2006-05-18 Sony Corp 撮像装置、光量調整機構、光量制御羽根及び光量制御羽根の製造方法
US7541250B2 (en) * 2006-03-07 2009-06-02 Atmel Corporation Method for forming a self-aligned twin well region with simplified processing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3109760A (en) * 1960-02-15 1963-11-05 Cievite Corp P-nu junction and method
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices

Also Published As

Publication number Publication date
JPS4964371A (en:Method) 1974-06-21
GB1440234A (en) 1976-06-23
DE2230749A1 (de) 1974-01-10
US3867203A (en) 1975-02-18
BE801229A (fr) 1973-10-15
DE2230749B2 (de) 1978-03-30

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee