DE2225563B2 - - Google Patents

Info

Publication number
DE2225563B2
DE2225563B2 DE2225563A DE2225563A DE2225563B2 DE 2225563 B2 DE2225563 B2 DE 2225563B2 DE 2225563 A DE2225563 A DE 2225563A DE 2225563 A DE2225563 A DE 2225563A DE 2225563 B2 DE2225563 B2 DE 2225563B2
Authority
DE
Germany
Prior art keywords
impedance
voltage
circuit
field effect
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE2225563A
Other languages
German (de)
English (en)
Other versions
DE2225563C3 (de
DE2225563A1 (de
Inventor
Arthur Julius Plymouth Mich. Radcliffe Jun. (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Burroughs Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burroughs Corp filed Critical Burroughs Corp
Publication of DE2225563A1 publication Critical patent/DE2225563A1/de
Publication of DE2225563B2 publication Critical patent/DE2225563B2/de
Application granted granted Critical
Publication of DE2225563C3 publication Critical patent/DE2225563C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers

Landscapes

  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
DE2225563A 1971-05-28 1972-05-26 Leseschaltung Expired DE2225563C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14789471A 1971-05-28 1971-05-28

Publications (3)

Publication Number Publication Date
DE2225563A1 DE2225563A1 (de) 1973-01-11
DE2225563B2 true DE2225563B2 (enExample) 1980-01-31
DE2225563C3 DE2225563C3 (de) 1980-09-25

Family

ID=22523358

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2225563A Expired DE2225563C3 (de) 1971-05-28 1972-05-26 Leseschaltung

Country Status (8)

Country Link
US (1) US3739355A (enExample)
JP (1) JPS5223702B2 (enExample)
BE (1) BE783247A (enExample)
DE (1) DE2225563C3 (enExample)
FR (1) FR2139171B1 (enExample)
GB (1) GB1350877A (enExample)
IT (1) IT955478B (enExample)
NL (1) NL176405C (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778783A (en) * 1971-11-29 1973-12-11 Mostek Corp Dynamic random access memory
US4060795A (en) * 1973-02-23 1977-11-29 Hitachi, Ltd. Scanning system
US4014007A (en) * 1975-01-21 1977-03-22 Siemens Aktiengesellschaft Circuit arrangement for placing information in a programmable ecl read only memory
US4014008A (en) * 1975-02-07 1977-03-22 Siemens Aktiengesellschaft Circuit arrangement for interference-free storage of information in a programmable read-only memory
DE2505245B2 (de) * 1975-02-07 1977-07-07 Siemens AG, 1000 Berlin und 8000 München Festwertspeicherbaustein
US4168490A (en) * 1978-06-26 1979-09-18 Fairchild Camera And Instrument Corporation Addressable word line pull-down circuit
US4305139A (en) * 1979-12-26 1981-12-08 International Business Machines Corporation State detection for storage cells
JPS57501003A (enExample) * 1980-06-02 1982-06-03
US6163480A (en) * 1997-12-29 2000-12-19 Honeywell International Inc. Memory with high integrity memory cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3096510A (en) * 1960-11-25 1963-07-02 Ampex Circuit for sensing signal outptut of a magnetic-core memory
US3484764A (en) * 1966-11-01 1969-12-16 Bell Telephone Labor Inc Symmetrical store array
US3495223A (en) * 1967-07-28 1970-02-10 Gen Electric Read/write circuit for use with a magnetic memory

Also Published As

Publication number Publication date
JPS5223702B2 (enExample) 1977-06-25
US3739355A (en) 1973-06-12
IT955478B (it) 1973-09-29
NL176405C (nl) 1985-04-01
DE2225563C3 (de) 1980-09-25
FR2139171A1 (enExample) 1973-01-05
FR2139171B1 (enExample) 1973-07-13
DE2225563A1 (de) 1973-01-11
JPS4849337A (enExample) 1973-07-12
NL7206557A (enExample) 1972-11-30
GB1350877A (en) 1974-04-24
NL176405B (nl) 1984-11-01
BE783247A (fr) 1972-09-01

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8328 Change in the person/name/address of the agent

Free format text: EISENFUEHR, G., DIPL.-ING. SPEISER, D., DIPL.-ING., PAT.-ANW., 2800 BREMEN

8339 Ceased/non-payment of the annual fee