DE2209921A1 - Ladungsgekoppelte Halbleiteranordnung - Google Patents
Ladungsgekoppelte HalbleiteranordnungInfo
- Publication number
- DE2209921A1 DE2209921A1 DE19722209921 DE2209921A DE2209921A1 DE 2209921 A1 DE2209921 A1 DE 2209921A1 DE 19722209921 DE19722209921 DE 19722209921 DE 2209921 A DE2209921 A DE 2209921A DE 2209921 A1 DE2209921 A1 DE 2209921A1
- Authority
- DE
- Germany
- Prior art keywords
- areas
- arrangement according
- semiconductor body
- insulating layer
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 239000000463 material Substances 0.000 claims description 51
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052735 hafnium Inorganic materials 0.000 claims description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 description 34
- 230000006870 function Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- -1 on the other hand Chemical compound 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 244000144980 herd Species 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
Landscapes
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12909771A | 1971-03-29 | 1971-03-29 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2209921A1 true DE2209921A1 (de) | 1972-10-05 |
| DE2209921B2 DE2209921B2 (enrdf_load_stackoverflow) | 1979-07-12 |
| DE2209921C3 DE2209921C3 (enrdf_load_stackoverflow) | 1980-03-20 |
Family
ID=22438441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722209921 Granted DE2209921A1 (de) | 1971-03-29 | 1972-03-02 | Ladungsgekoppelte Halbleiteranordnung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5437476B1 (enrdf_load_stackoverflow) |
| DE (1) | DE2209921A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2131992B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1375064A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4646119A (en) * | 1971-01-14 | 1987-02-24 | Rca Corporation | Charge coupled circuits |
-
1972
- 1972-02-25 GB GB875672A patent/GB1375064A/en not_active Expired
- 1972-02-29 FR FR727207619A patent/FR2131992B1/fr not_active Expired
- 1972-03-02 DE DE19722209921 patent/DE2209921A1/de active Granted
- 1972-03-07 JP JP2285272A patent/JPS5437476B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2209921C3 (enrdf_load_stackoverflow) | 1980-03-20 |
| DE2209921B2 (enrdf_load_stackoverflow) | 1979-07-12 |
| FR2131992B1 (enrdf_load_stackoverflow) | 1974-06-28 |
| JPS5437476B1 (enrdf_load_stackoverflow) | 1979-11-15 |
| FR2131992A1 (enrdf_load_stackoverflow) | 1972-11-17 |
| GB1375064A (enrdf_load_stackoverflow) | 1974-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2107037C3 (enrdf_load_stackoverflow) | ||
| DE2439799C2 (de) | Ladungsgekoppelte Anordnung, insbesondere Bildsensor | |
| DE2409472C3 (de) | Elektrisch löschbares Halbleiterspeicherelement mit einem Doppelgate-Isolierschicht-FET | |
| DE2611338C3 (de) | Feldeffekttransistor mit sehr kurzer Kanallange | |
| DE2705503C3 (de) | Halbleiterspeicheranordnung | |
| DE3029539A1 (de) | Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle | |
| DE2432352C3 (de) | MNOS-Halbleiterspeicherelement | |
| DE2740203C2 (de) | Ladungsgekoppelte Halbleiteranordnung | |
| DE2504088A1 (de) | Ladungsgekoppelte anordnung | |
| DE3243565A1 (de) | Ladungsgekoppelte anordnung | |
| DE2525093A1 (de) | Vorrichtung und verfahren zur ladungsregenerierung | |
| DE2201028B2 (de) | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens | |
| DE2231565A1 (de) | Umsteuerbare zweiphasige ladungsgekoppelte baueinheit | |
| DE2252148B2 (enrdf_load_stackoverflow) | ||
| DE2250140C2 (de) | Ladungsgekoppelte Halbleiteranordnung | |
| DE2742935C3 (de) | Nichtflüchtiger Langzeitspeicher | |
| DE2151898C3 (de) | Ladungstransporteinrichtung | |
| DE2520608C3 (de) | Halbleiteranordnung zum Digitalisieren eines analogen elektrischen Eingangssignals | |
| DE2209921A1 (de) | Ladungsgekoppelte Halbleiteranordnung | |
| DE2848576C2 (enrdf_load_stackoverflow) | ||
| DE2260584A1 (de) | Informationsspeicher- und uebertragungsanordnung | |
| DE2643446C2 (enrdf_load_stackoverflow) | ||
| DE2558337C2 (de) | Nach dem Prinzip der Ladungsverschiebung arbeitender Halbleiter-Bildsensor | |
| DE2153675A1 (de) | Ladungsgekoppelte Baueinheit | |
| DE2630388B2 (de) | Ladungsgekoppeltes Halbleiterbauelement, Verfahren zu seinem Betrieb und Verwendung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |