DE2206183B2 - Verfahren zur Herstellung einer Lumineszenzdiode - Google Patents
Verfahren zur Herstellung einer LumineszenzdiodeInfo
- Publication number
- DE2206183B2 DE2206183B2 DE2206183A DE2206183A DE2206183B2 DE 2206183 B2 DE2206183 B2 DE 2206183B2 DE 2206183 A DE2206183 A DE 2206183A DE 2206183 A DE2206183 A DE 2206183A DE 2206183 B2 DE2206183 B2 DE 2206183B2
- Authority
- DE
- Germany
- Prior art keywords
- gaas
- emitting diode
- weight ratio
- substrate material
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H10P14/263—
-
- H10P14/265—
-
- H10P14/3421—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD15357371A DD110407A3 (OSRAM) | 1971-03-09 | 1971-03-09 | |
| NL7209649A NL7209649A (OSRAM) | 1971-03-09 | 1972-07-12 | |
| US282190A US3911462A (en) | 1971-03-09 | 1972-08-09 | IIIa - Vb Type luminescent diodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2206183A1 DE2206183A1 (de) | 1972-09-21 |
| DE2206183B2 true DE2206183B2 (de) | 1980-03-06 |
Family
ID=27179776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2206183A Withdrawn DE2206183B2 (de) | 1971-03-09 | 1972-02-10 | Verfahren zur Herstellung einer Lumineszenzdiode |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3911462A (OSRAM) |
| DE (1) | DE2206183B2 (OSRAM) |
| FR (1) | FR2128701B1 (OSRAM) |
| NL (1) | NL7209649A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4101920A (en) * | 1975-01-29 | 1978-07-18 | Sony Corporation | Green light emitting diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3617820A (en) * | 1966-11-18 | 1971-11-02 | Monsanto Co | Injection-luminescent diodes |
-
1972
- 1972-02-10 DE DE2206183A patent/DE2206183B2/de not_active Withdrawn
- 1972-03-07 FR FR7207875A patent/FR2128701B1/fr not_active Expired
- 1972-07-12 NL NL7209649A patent/NL7209649A/xx not_active Application Discontinuation
- 1972-08-09 US US282190A patent/US3911462A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE2206183A1 (de) | 1972-09-21 |
| US3911462A (en) | 1975-10-07 |
| FR2128701B1 (OSRAM) | 1977-01-14 |
| NL7209649A (OSRAM) | 1974-01-15 |
| FR2128701A1 (OSRAM) | 1972-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3446956C2 (OSRAM) | ||
| DE4116563C2 (de) | Siliciumcarbid-Leuchtdiode und Verfahren zu ihrer Herstellung | |
| DE2830081A1 (de) | Verfahren zum herstellen eines halbleitermateriales der gruppen iii/v des periodischen systems | |
| DE3123231C2 (OSRAM) | ||
| DE2654063A1 (de) | Verfahren zum herstellen eines bandes aus polykristallinem halbleitermaterial | |
| DE3926373A1 (de) | Lichtemittierende diode aus siliciumcarbid mit einem pn-uebergang | |
| DE2231926A1 (de) | Verfahren zur herstellung von halbleitermaterial und zur herstellung von halbleitereinrichtungen | |
| DE3123234C2 (de) | Verfahren zur Herstellung eines pn-Übergangs in einem Halbleitermaterial der Gruppe II-VI | |
| DE3810245A1 (de) | Lichtemittierendes element und verfahren zu seiner herstellung | |
| DE1138481C2 (de) | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase | |
| DE3123233C2 (de) | Verfahren zur Herstellung von CdS-,CdSe-,ZnS-oder ZnSe-Halbleiterkristallen | |
| DE2018072C3 (de) | Verfahren zur Herstellung einer Lumineszenzdiode | |
| DE2806766A1 (de) | Molekularstrahl-epitaxieverfahren und vorrichtung zu seiner durchfuehrung | |
| DE2110961C3 (de) | Verfahren zum epitaktischen Aufwachsen eines ternären III-V-Mischkristalls | |
| DE2206183B2 (de) | Verfahren zur Herstellung einer Lumineszenzdiode | |
| DE2544286C3 (de) | Verfahren zum epitaktischen Abscheiden einer III-V-Halbleiterkristallschicht auf einem Substrat | |
| DE69106646T2 (de) | Herstellungsverfahren für eine blaues Licht emittierende ZnSe-Vorrichtung. | |
| DE3123232C2 (de) | Verfahren zur Herstellung eines pn-Übergangs in einem ZnSe-Einkristall | |
| DE69419583T2 (de) | Verfahren zur Beschichtung mittels MOCVD | |
| DE2154386B2 (de) | Verfahren zum Herstellen einer epitaktischen Halbleiterschicht auf einem Halbleitersubstrat durch Abscheiden aus einem Reaktionsgas/Trägergas-Gemisch | |
| DE1644045B2 (de) | Verfahren zur Herstellung dotierter Galliumphosphideinkristalle zur Verwendung als Halbleiterkörper in elektrolumineszenten Bauelementen mit pnÜbergang | |
| DE1589196A1 (de) | Verfahren zum Herstellen von elektrolumineszenten Gallium-Phosphid-Dioden | |
| DE2323211A1 (de) | Verfahren zur herstellung einer intermetallischen einkristall-halbleiterverbindung | |
| DE3339272A1 (de) | Verfahren zur herstellung von a(pfeil abwaerts)3(pfeil abwaerts)b(pfeil abwaerts)5(pfeil abwaerts)-lumineszenzdioden | |
| DE2346198A1 (de) | Verfahren zur herstellung gelb leuchtender galliumphosphid-dioden |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8239 | Disposal/non-payment of the annual fee |