DE2204946A1 - Dünnschicht-MOM-Kondensator und Verfahren zu seiner Herstellung - Google Patents
Dünnschicht-MOM-Kondensator und Verfahren zu seiner HerstellungInfo
- Publication number
- DE2204946A1 DE2204946A1 DE19722204946 DE2204946A DE2204946A1 DE 2204946 A1 DE2204946 A1 DE 2204946A1 DE 19722204946 DE19722204946 DE 19722204946 DE 2204946 A DE2204946 A DE 2204946A DE 2204946 A1 DE2204946 A1 DE 2204946A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon dioxide
- chrome
- layer
- electrode
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 70
- 239000000377 silicon dioxide Substances 0.000 claims description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000006835 compression Effects 0.000 description 7
- 238000007906 compression Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000000280 densification Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005056 compaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000003377 silicon compounds Chemical group 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- IKYVSHIUGVXHMS-UHFFFAOYSA-N [Cr].[Cr].[Au] Chemical compound [Cr].[Cr].[Au] IKYVSHIUGVXHMS-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11397371A | 1971-02-09 | 1971-02-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2204946A1 true DE2204946A1 (de) | 1972-08-24 |
Family
ID=22352616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19722204946 Pending DE2204946A1 (de) | 1971-02-09 | 1972-02-03 | Dünnschicht-MOM-Kondensator und Verfahren zu seiner Herstellung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3679942A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5026142B1 (cg-RX-API-DMAC7.html) |
| AU (1) | AU448310B2 (cg-RX-API-DMAC7.html) |
| BE (1) | BE779056A (cg-RX-API-DMAC7.html) |
| CA (1) | CA939028A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2204946A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2124292B1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1338193A (cg-RX-API-DMAC7.html) |
| IT (1) | IT947408B (cg-RX-API-DMAC7.html) |
| SE (1) | SE362529B (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0182377A3 (de) * | 1984-11-23 | 1987-10-21 | Dieter Prof. Dr. Bäuerle | Verfahren zur Herstellung von Dünnschichtkondensatoren |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2818624C2 (de) * | 1978-04-27 | 1987-03-12 | Roederstein Spezialfabriken für Bauelemente der Elektronik und Kondensatoren der Starkstromtechnik GmbH, 8300 Landshut | Verfahren zur Herstellung eines elektrischen Kondensators |
| FR2509516A1 (fr) * | 1981-07-08 | 1983-01-14 | Labo Electronique Physique | Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise |
| US4453199A (en) * | 1983-06-17 | 1984-06-05 | Avx Corporation | Low cost thin film capacitor |
| DE68906219T2 (de) * | 1988-08-25 | 1993-08-05 | Matsushita Electric Ind Co Ltd | Duennfilmkapazitaet und verfahren zur herstellung einer integrierten hybridmikrowellenschaltung. |
| US6935002B1 (en) * | 1997-10-13 | 2005-08-30 | Murata Manufacturing Co., Ltd. | Method of manufacturing a nonreciprocal circuit device |
| US6180462B1 (en) * | 1999-06-07 | 2001-01-30 | United Microelectronics Corp. | Method of fabricating an analog integrated circuit with ESD protection |
| US6323078B1 (en) * | 1999-10-14 | 2001-11-27 | Agere Systems Guardian Corp. | Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby |
| KR100651724B1 (ko) * | 2004-12-13 | 2006-12-01 | 한국전자통신연구원 | 수평 구조의 가변 축전기 및 이를 구비한 초고주파 가변소자 |
| CN102385985A (zh) * | 2011-08-05 | 2012-03-21 | 贵州大学 | 金属薄膜电容及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE516556A (cg-RX-API-DMAC7.html) * | ||||
| US2398176A (en) * | 1943-03-15 | 1946-04-09 | Du Pont | Electrical capacitor |
| GB967746A (en) * | 1960-11-08 | 1964-08-26 | Nippon Electric Co | Electrolytic capacitors |
| US3273033A (en) * | 1963-08-29 | 1966-09-13 | Litton Systems Inc | Multidielectric thin film capacitors |
| US3397446A (en) * | 1965-07-09 | 1968-08-20 | Western Electric Co | Thin film capacitors employing semiconductive oxide electrolytes |
-
1971
- 1971-02-09 US US113973A patent/US3679942A/en not_active Expired - Lifetime
-
1972
- 1972-01-17 CA CA132626A patent/CA939028A/en not_active Expired
- 1972-01-28 FR FR7202882A patent/FR2124292B1/fr not_active Expired
- 1972-02-02 GB GB496172A patent/GB1338193A/en not_active Expired
- 1972-02-03 DE DE19722204946 patent/DE2204946A1/de active Pending
- 1972-02-07 BE BE779056A patent/BE779056A/xx unknown
- 1972-02-08 SE SE01461/72A patent/SE362529B/xx unknown
- 1972-02-08 AU AU38727/72A patent/AU448310B2/en not_active Expired
- 1972-02-08 IT IT20356/72A patent/IT947408B/it active
- 1972-02-08 JP JP47013930A patent/JPS5026142B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0182377A3 (de) * | 1984-11-23 | 1987-10-21 | Dieter Prof. Dr. Bäuerle | Verfahren zur Herstellung von Dünnschichtkondensatoren |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5026142B1 (cg-RX-API-DMAC7.html) | 1975-08-29 |
| AU3872772A (en) | 1973-08-09 |
| CA939028A (en) | 1973-12-25 |
| AU448310B2 (en) | 1974-04-19 |
| FR2124292B1 (cg-RX-API-DMAC7.html) | 1976-07-09 |
| FR2124292A1 (cg-RX-API-DMAC7.html) | 1972-09-22 |
| SE362529B (cg-RX-API-DMAC7.html) | 1973-12-10 |
| IT947408B (it) | 1973-05-21 |
| GB1338193A (en) | 1973-11-21 |
| BE779056A (fr) | 1972-05-30 |
| US3679942A (en) | 1972-07-25 |
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