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Licentia Patent Verwaltungs GmbH
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Licentia Patent Verwaltungs GmbH
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Application filed by Licentia Patent Verwaltungs GmbHfiledCriticalLicentia Patent Verwaltungs GmbH
Priority to DE19712162948priorityCriticalpatent/DE2162948B2/de
Publication of DE2162948A1publicationCriticalpatent/DE2162948A1/de
Publication of DE2162948B2publicationCriticalpatent/DE2162948B2/de
Application grantedgrantedCritical
Publication of DE2162948C3publicationCriticalpatent/DE2162948C3/de
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
C30B31/165—Diffusion sources
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Chemical & Material Sciences
(AREA)
Engineering & Computer Science
(AREA)
Crystallography & Structural Chemistry
(AREA)
Materials Engineering
(AREA)
Metallurgy
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Organic Chemistry
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Crystals, And After-Treatments Of Crystals
(AREA)
DE197121629481971-12-181971-12-18Verfahren zum Herstellen von Diffusionszonen in einem Halbleiterkörper
GrantedDE2162948B2
(de)
Quarzglasgeräteteil, insbesondere Quarzglasrohr, mit in seiner Außenoberflächenschicht enthaltenen, Kristallbildung fördernden Keimen zur Verwendung bei hohen Temperaturen, insbesondere für die Durchführung halbleitertechnologischer Verfahren
Hohlkoerper aus quarzglas, insbesondere rohrfoermige quarzglaskoerper, zur verwendung bei unter hohen temperaturen durchzufuehrenden herstellungsverfahren fuer halbleiterbauelemente