DE2153306C3 - Abfuhlanordnung - Google Patents
AbfuhlanordnungInfo
- Publication number
- DE2153306C3 DE2153306C3 DE2153306A DE2153306A DE2153306C3 DE 2153306 C3 DE2153306 C3 DE 2153306C3 DE 2153306 A DE2153306 A DE 2153306A DE 2153306 A DE2153306 A DE 2153306A DE 2153306 C3 DE2153306 C3 DE 2153306C3
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- volts
- transistors
- potential
- control electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 59
- 239000004020 conductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 6
- 230000008054 signal transmission Effects 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000006735 deficit Effects 0.000 description 13
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 230000010354 integration Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005070 sampling Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 241000718530 Cryptoses Species 0.000 description 1
- 241001276440 Irodes Species 0.000 description 1
- 101710103851 Tyrosine-protein kinase transforming protein Abl Proteins 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- XAEWZDYWZHIUCT-UHFFFAOYSA-N desipramine hydrochloride Chemical compound [H+].[Cl-].C1CC2=CC=CC=C2N(CCCNC)C2=CC=CC=C21 XAEWZDYWZHIUCT-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005032 impulse control Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000036544 posture Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 208000027765 speech disease Diseases 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
- H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image Input (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8392370A | 1970-10-26 | 1970-10-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2153306A1 DE2153306A1 (de) | 1972-04-27 |
| DE2153306B2 DE2153306B2 (de) | 1973-08-30 |
| DE2153306C3 true DE2153306C3 (de) | 1974-03-21 |
Family
ID=22181535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2153306A Expired DE2153306C3 (de) | 1970-10-26 | 1971-10-26 | Abfuhlanordnung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3683193A (enExample) |
| JP (1) | JPS5724707B1 (enExample) |
| CA (1) | CA950049A (enExample) |
| DE (1) | DE2153306C3 (enExample) |
| FR (1) | FR2111846B1 (enExample) |
| GB (2) | GB1370450A (enExample) |
| NL (1) | NL172110C (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA948331A (en) * | 1971-03-16 | 1974-05-28 | Michael F. Tompsett | Charge transfer imaging devices |
| NL170480C (nl) * | 1971-03-19 | 1982-11-01 | Philips Nv | Opnemer voor het omzetten van een twee-dimensionaal fysisch patroon in een televisiesignaal. |
| US3890633A (en) * | 1971-04-06 | 1975-06-17 | Rca Corp | Charge-coupled circuits |
| US3805062A (en) * | 1972-06-21 | 1974-04-16 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
| GB1444541A (en) * | 1972-09-22 | 1976-08-04 | Mullard Ltd | Radiation sensitive solid state devices |
| US3810126A (en) * | 1972-12-29 | 1974-05-07 | Gen Electric | Recirculation mode analog bucket-brigade memory system |
| US3786265A (en) * | 1973-02-02 | 1974-01-15 | Lindly Company Inc | Apparatus for detecting defects in continuous traveling material |
| US3801820A (en) * | 1973-02-09 | 1974-04-02 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
| US3845295A (en) * | 1973-05-02 | 1974-10-29 | Rca Corp | Charge-coupled radiation sensing circuit with charge skim-off and reset |
| US3801821A (en) * | 1973-06-14 | 1974-04-02 | Sun Chemical Corp | Large field flash sensor |
| NL7311429A (nl) * | 1973-08-20 | 1975-02-24 | Philips Nv | Opneeminrichting uitgevoerd met informatie- opneemplaatsen in een halfgeleiderlichaam. |
| FR2244321A1 (enExample) * | 1973-09-14 | 1975-04-11 | Thomson Brandt | |
| US3886359A (en) * | 1974-01-04 | 1975-05-27 | Texas Instruments Inc | Time interval compression address sequentially |
| US4025910A (en) * | 1975-01-23 | 1977-05-24 | Massachusetts Institute Of Technology | Solid-state camera employing non-volatile charge storage elements |
| DE2543083C3 (de) * | 1975-09-26 | 1979-01-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Bildsensor sowie Verfahren zum Betrieb eines solchen Bildsensors |
| DE2543627A1 (de) * | 1975-09-30 | 1977-04-14 | Siemens Ag | Optoelektronischer sensor und verfahren zu seinem betrieb |
| US4219736A (en) * | 1975-11-14 | 1980-08-26 | National Computer Systems, Inc. | Apparatus for photoelectrically reading a translucent answer document having a bias bar printed thereon |
| US4087833A (en) * | 1977-01-03 | 1978-05-02 | Reticon Corporation | Interlaced photodiode array employing analog shift registers |
| JPS5389617A (en) * | 1977-01-19 | 1978-08-07 | Hitachi Ltd | Driving method of solid image pickup element |
| JPS6017196B2 (ja) * | 1978-01-23 | 1985-05-01 | 株式会社日立製作所 | 固体撮像素子 |
| FR2430696A1 (fr) * | 1978-07-06 | 1980-02-01 | Ebauches Sa | Diviseur de frequence integre |
| US4242700A (en) * | 1979-01-22 | 1980-12-30 | Rca Corporation | Line transfer CCD imagers |
| US4281254A (en) * | 1979-07-02 | 1981-07-28 | Xerox Corporation | Self scanned photosensitive array |
| FR2469805A1 (fr) * | 1979-11-09 | 1981-05-22 | Thomson Csf | Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice |
| JPS5847204A (ja) * | 1981-09-16 | 1983-03-18 | Fuji Electric Corp Res & Dev Ltd | 微小領域検出器 |
| US5315114A (en) * | 1981-12-18 | 1994-05-24 | Texas Instruments Incorporated | Integrated circuit detector array incorporating bucket brigade devices for time delay and integration |
| JPS5932250A (ja) * | 1982-08-16 | 1984-02-21 | Fuji Xerox Co Ltd | 原稿読取装置 |
| US4523326A (en) * | 1983-01-17 | 1985-06-11 | Hughes Aircraft Company | Low noise charge coupled imager circuit |
| EP0130103A1 (en) * | 1983-06-21 | 1985-01-02 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Charge-coupled device image sensor and method for asynchronous readout |
| FR2583602B1 (fr) * | 1985-06-18 | 1988-07-01 | Centre Nat Rech Scient | Retine integree a reseau de processeurs |
| US4686574A (en) * | 1986-04-04 | 1987-08-11 | Rca Corporation | Line-sequential read out of a phototsensor array via a CCD shift register clocked at a multiple of pixel scan rate |
| JP3630894B2 (ja) | 1996-12-24 | 2005-03-23 | 株式会社半導体エネルギー研究所 | 電荷転送半導体装置およびその作製方法並びにイメージセンサ |
| US6459077B1 (en) | 1998-09-15 | 2002-10-01 | Dalsa, Inc. | Bucket brigade TDI photodiode sensor |
| GB2343577B (en) * | 1998-11-05 | 2001-01-24 | Simage Oy | Imaging device |
| JP2004519147A (ja) * | 2001-02-08 | 2004-06-24 | レイセオン・カンパニー | ２方向可能なバケットブリゲード回路 |
| GB2438445A (en) * | 2006-05-26 | 2007-11-28 | Thales Holdings Uk Plc | A sample-and-hold circuit for microwave signals, using photoconductive switches |
| EP2316221A1 (en) * | 2008-08-28 | 2011-05-04 | MESA Imaging AG | Demodulation pixel with daisy chain charge storage sites and method of operation therefor |
| US10347681B2 (en) | 2016-02-19 | 2019-07-09 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3289010A (en) * | 1963-11-21 | 1966-11-29 | Burroughs Corp | Shift register |
| US3493812A (en) * | 1967-04-26 | 1970-02-03 | Rca Corp | Integrated thin film translators |
-
1970
- 1970-10-26 US US83923A patent/US3683193A/en not_active Expired - Lifetime
-
1971
- 1971-10-15 CA CA125,310A patent/CA950049A/en not_active Expired
- 1971-10-25 GB GB1816674A patent/GB1370450A/en not_active Expired
- 1971-10-25 NL NLAANVRAGE7114637,A patent/NL172110C/xx not_active IP Right Cessation
- 1971-10-25 GB GB4942271A patent/GB1370449A/en not_active Expired
- 1971-10-26 JP JP8503571A patent/JPS5724707B1/ja active Pending
- 1971-10-26 DE DE2153306A patent/DE2153306C3/de not_active Expired
- 1971-10-26 FR FR7138487A patent/FR2111846B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2111846A1 (enExample) | 1972-06-09 |
| US3683193A (en) | 1972-08-08 |
| FR2111846B1 (enExample) | 1975-09-26 |
| NL7114637A (enExample) | 1972-04-28 |
| NL172110B (nl) | 1983-02-01 |
| NL172110C (nl) | 1983-07-01 |
| JPS479402A (enExample) | 1972-05-15 |
| GB1370449A (en) | 1974-10-16 |
| GB1370450A (en) | 1974-10-16 |
| DE2153306B2 (de) | 1973-08-30 |
| DE2153306A1 (de) | 1972-04-27 |
| CA950049A (en) | 1974-06-25 |
| JPS5724707B1 (enExample) | 1982-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2153306C3 (de) | Abfuhlanordnung | |
| DE3345215C2 (de) | Festkörper-Bildaufnahmewandler | |
| DE2107037B2 (de) | Ladungsübertragungsvorrichtung | |
| DE1235990B (de) | Impulsfolgegenerator | |
| DE2213765B2 (de) | Bildaufnahmevorrichtung mit einem Feldeffekttransistor als Sensor | |
| DE2342684A1 (de) | Signaluebertragungssystem | |
| DE2347271A1 (de) | Strahlungsempfindliche halbleiteranordnung | |
| DE2842346A1 (de) | Bildabtaster in festkoerpertechnik | |
| DE1920077C2 (de) | Schaltungsanordnung zum Übertragen von Ladungen | |
| DE2634312C2 (de) | Mit zweiphasigen Taktsignalen betreibbare CCD-Vorrichtung | |
| DE2939518C2 (enExample) | ||
| DE3738025C2 (de) | Ladungsverschiebungs-Bauelement | |
| DE2248423C3 (de) | Ladungsübertragungssystem | |
| DE2528316A1 (de) | Von einer ladungsuebertragungsvorrichtung gebildete signalverarbeitungsanordnung | |
| DE2200455B2 (de) | Ladungsgekoppelte Halbleiterschaltung | |
| DE3345135C2 (de) | Festkörper-Bildaufnahmewandler | |
| DE2734409C3 (de) | Bildaufnahmegerät in CCD-Bauweise | |
| DE2939403C2 (enExample) | ||
| DE3432994A1 (de) | Festkoerper-bildabtastvorrichtung | |
| DE2345686A1 (de) | Bildwiedergabe- und/oder -umwandlungsvorrichtung | |
| DE2341822A1 (de) | Digitales schieberegister | |
| DE3643994A1 (de) | Spannungsvervielfacherschaltung | |
| DE2558337C2 (de) | Nach dem Prinzip der Ladungsverschiebung arbeitender Halbleiter-Bildsensor | |
| DE2703317A1 (de) | Ladungsgekoppelte korrelatoranordnung | |
| DE3128091C2 (de) | Schaltvorrichtung zum Entladen einer Kapazität |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |