DE2153306B2 - Abfuehlanordnung - Google Patents

Abfuehlanordnung

Info

Publication number
DE2153306B2
DE2153306B2 DE19712153306 DE2153306A DE2153306B2 DE 2153306 B2 DE2153306 B2 DE 2153306B2 DE 19712153306 DE19712153306 DE 19712153306 DE 2153306 A DE2153306 A DE 2153306A DE 2153306 B2 DE2153306 B2 DE 2153306B2
Authority
DE
Germany
Prior art keywords
filling arrangement
filling
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19712153306
Other languages
English (en)
Other versions
DE2153306C3 (de
DE2153306A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE2153306A1 publication Critical patent/DE2153306A1/de
Publication of DE2153306B2 publication Critical patent/DE2153306B2/de
Application granted granted Critical
Publication of DE2153306C3 publication Critical patent/DE2153306C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE2153306A 1970-10-26 1971-10-26 Abfuhlanordnung Expired DE2153306C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8392370A 1970-10-26 1970-10-26

Publications (3)

Publication Number Publication Date
DE2153306A1 DE2153306A1 (de) 1972-04-27
DE2153306B2 true DE2153306B2 (de) 1973-08-30
DE2153306C3 DE2153306C3 (de) 1974-03-21

Family

ID=22181535

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2153306A Expired DE2153306C3 (de) 1970-10-26 1971-10-26 Abfuhlanordnung

Country Status (7)

Country Link
US (1) US3683193A (de)
JP (1) JPS5724707B1 (de)
CA (1) CA950049A (de)
DE (1) DE2153306C3 (de)
FR (1) FR2111846B1 (de)
GB (2) GB1370450A (de)
NL (1) NL172110C (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2331093A1 (de) * 1972-06-21 1974-01-17 Gen Electric Verfahren und vorrichtung zum abtasten von strahlung und zur lieferung einer elektrischen ausgabe

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
NL170480C (nl) * 1971-03-19 1982-11-01 Philips Nv Opnemer voor het omzetten van een twee-dimensionaal fysisch patroon in een televisiesignaal.
US3890633A (en) * 1971-04-06 1975-06-17 Rca Corp Charge-coupled circuits
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
US3810126A (en) * 1972-12-29 1974-05-07 Gen Electric Recirculation mode analog bucket-brigade memory system
US3786265A (en) * 1973-02-02 1974-01-15 Lindly Company Inc Apparatus for detecting defects in continuous traveling material
US3801820A (en) * 1973-02-09 1974-04-02 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
US3845295A (en) * 1973-05-02 1974-10-29 Rca Corp Charge-coupled radiation sensing circuit with charge skim-off and reset
US3801821A (en) * 1973-06-14 1974-04-02 Sun Chemical Corp Large field flash sensor
NL7311429A (nl) * 1973-08-20 1975-02-24 Philips Nv Opneeminrichting uitgevoerd met informatie- opneemplaatsen in een halfgeleiderlichaam.
FR2244321A1 (de) * 1973-09-14 1975-04-11 Thomson Brandt
US3886359A (en) * 1974-01-04 1975-05-27 Texas Instruments Inc Time interval compression address sequentially
US4025910A (en) * 1975-01-23 1977-05-24 Massachusetts Institute Of Technology Solid-state camera employing non-volatile charge storage elements
DE2543083C3 (de) * 1975-09-26 1979-01-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bildsensor sowie Verfahren zum Betrieb eines solchen Bildsensors
DE2543627A1 (de) * 1975-09-30 1977-04-14 Siemens Ag Optoelektronischer sensor und verfahren zu seinem betrieb
US4219736A (en) * 1975-11-14 1980-08-26 National Computer Systems, Inc. Apparatus for photoelectrically reading a translucent answer document having a bias bar printed thereon
US4087833A (en) * 1977-01-03 1978-05-02 Reticon Corporation Interlaced photodiode array employing analog shift registers
JPS5389617A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Driving method of solid image pickup element
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
FR2430696A1 (fr) * 1978-07-06 1980-02-01 Ebauches Sa Diviseur de frequence integre
US4242700A (en) * 1979-01-22 1980-12-30 Rca Corporation Line transfer CCD imagers
US4281254A (en) * 1979-07-02 1981-07-28 Xerox Corporation Self scanned photosensitive array
FR2469805A1 (fr) * 1979-11-09 1981-05-22 Thomson Csf Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice
JPS5847204A (ja) * 1981-09-16 1983-03-18 Fuji Electric Corp Res & Dev Ltd 微小領域検出器
US5315114A (en) * 1981-12-18 1994-05-24 Texas Instruments Incorporated Integrated circuit detector array incorporating bucket brigade devices for time delay and integration
JPS5932250A (ja) * 1982-08-16 1984-02-21 Fuji Xerox Co Ltd 原稿読取装置
US4523326A (en) * 1983-01-17 1985-06-11 Hughes Aircraft Company Low noise charge coupled imager circuit
EP0130103A1 (de) * 1983-06-21 1985-01-02 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Ladungsgekoppelter Bildsensor und Verfahren zum asynchronen Auslesen
FR2583602B1 (fr) * 1985-06-18 1988-07-01 Centre Nat Rech Scient Retine integree a reseau de processeurs
US4686574A (en) * 1986-04-04 1987-08-11 Rca Corporation Line-sequential read out of a phototsensor array via a CCD shift register clocked at a multiple of pixel scan rate
JP3630894B2 (ja) 1996-12-24 2005-03-23 株式会社半導体エネルギー研究所 電荷転送半導体装置およびその作製方法並びにイメージセンサ
US6459077B1 (en) 1998-09-15 2002-10-01 Dalsa, Inc. Bucket brigade TDI photodiode sensor
GB2343577B (en) * 1998-11-05 2001-01-24 Simage Oy Imaging device
JP2004519147A (ja) * 2001-02-08 2004-06-24 レイセオン・カンパニー ２方向可能なバケットブリゲード回路
GB2438445A (en) * 2006-05-26 2007-11-28 Thales Holdings Uk Plc A sample-and-hold circuit for microwave signals, using photoconductive switches
JP2012501608A (ja) * 2008-08-28 2012-01-19 メサ・イメージング・アー・ゲー デイジーチェーン構成の電荷格納領域を有する復調ピクセルおよびそれを操作する方法
US10347681B2 (en) * 2016-02-19 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Imaging device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289010A (en) * 1963-11-21 1966-11-29 Burroughs Corp Shift register
US3493812A (en) * 1967-04-26 1970-02-03 Rca Corp Integrated thin film translators

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2331093A1 (de) * 1972-06-21 1974-01-17 Gen Electric Verfahren und vorrichtung zum abtasten von strahlung und zur lieferung einer elektrischen ausgabe

Also Published As

Publication number Publication date
DE2153306C3 (de) 1974-03-21
NL172110C (nl) 1983-07-01
CA950049A (en) 1974-06-25
FR2111846A1 (de) 1972-06-09
JPS479402A (de) 1972-05-15
GB1370449A (en) 1974-10-16
GB1370450A (en) 1974-10-16
DE2153306A1 (de) 1972-04-27
FR2111846B1 (de) 1975-09-26
NL7114637A (de) 1972-04-28
JPS5724707B1 (de) 1982-05-25
NL172110B (nl) 1983-02-01
US3683193A (en) 1972-08-08

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee