JPS5724707B1 - - Google Patents

Info

Publication number
JPS5724707B1
JPS5724707B1 JP8503571A JP8503571A JPS5724707B1 JP S5724707 B1 JPS5724707 B1 JP S5724707B1 JP 8503571 A JP8503571 A JP 8503571A JP 8503571 A JP8503571 A JP 8503571A JP S5724707 B1 JPS5724707 B1 JP S5724707B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8503571A
Other languages
Japanese (ja)
Other versions
JPS479402A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS479402A publication Critical patent/JPS479402A/ja
Publication of JPS5724707B1 publication Critical patent/JPS5724707B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Electronic Switches (AREA)
JP8503571A 1970-10-26 1971-10-26 Pending JPS5724707B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8392370A 1970-10-26 1970-10-26

Publications (2)

Publication Number Publication Date
JPS479402A JPS479402A (enExample) 1972-05-15
JPS5724707B1 true JPS5724707B1 (enExample) 1982-05-25

Family

ID=22181535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8503571A Pending JPS5724707B1 (enExample) 1970-10-26 1971-10-26

Country Status (7)

Country Link
US (1) US3683193A (enExample)
JP (1) JPS5724707B1 (enExample)
CA (1) CA950049A (enExample)
DE (1) DE2153306C3 (enExample)
FR (1) FR2111846B1 (enExample)
GB (2) GB1370450A (enExample)
NL (1) NL172110C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017153074A (ja) * 2016-02-19 2017-08-31 株式会社半導体エネルギー研究所 撮像装置および電子機器

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
NL170480C (nl) * 1971-03-19 1982-11-01 Philips Nv Opnemer voor het omzetten van een twee-dimensionaal fysisch patroon in een televisiesignaal.
US3890633A (en) * 1971-04-06 1975-06-17 Rca Corp Charge-coupled circuits
US3805062A (en) * 1972-06-21 1974-04-16 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
US3810126A (en) * 1972-12-29 1974-05-07 Gen Electric Recirculation mode analog bucket-brigade memory system
US3786265A (en) * 1973-02-02 1974-01-15 Lindly Company Inc Apparatus for detecting defects in continuous traveling material
US3801820A (en) * 1973-02-09 1974-04-02 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
US3845295A (en) * 1973-05-02 1974-10-29 Rca Corp Charge-coupled radiation sensing circuit with charge skim-off and reset
US3801821A (en) * 1973-06-14 1974-04-02 Sun Chemical Corp Large field flash sensor
NL7311429A (nl) * 1973-08-20 1975-02-24 Philips Nv Opneeminrichting uitgevoerd met informatie- opneemplaatsen in een halfgeleiderlichaam.
FR2244321A1 (enExample) * 1973-09-14 1975-04-11 Thomson Brandt
US3886359A (en) * 1974-01-04 1975-05-27 Texas Instruments Inc Time interval compression address sequentially
US4025910A (en) * 1975-01-23 1977-05-24 Massachusetts Institute Of Technology Solid-state camera employing non-volatile charge storage elements
DE2543083C3 (de) * 1975-09-26 1979-01-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Bildsensor sowie Verfahren zum Betrieb eines solchen Bildsensors
DE2543627A1 (de) * 1975-09-30 1977-04-14 Siemens Ag Optoelektronischer sensor und verfahren zu seinem betrieb
US4219736A (en) * 1975-11-14 1980-08-26 National Computer Systems, Inc. Apparatus for photoelectrically reading a translucent answer document having a bias bar printed thereon
US4087833A (en) * 1977-01-03 1978-05-02 Reticon Corporation Interlaced photodiode array employing analog shift registers
JPS5389617A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Driving method of solid image pickup element
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
FR2430696A1 (fr) * 1978-07-06 1980-02-01 Ebauches Sa Diviseur de frequence integre
US4242700A (en) * 1979-01-22 1980-12-30 Rca Corporation Line transfer CCD imagers
US4281254A (en) * 1979-07-02 1981-07-28 Xerox Corporation Self scanned photosensitive array
FR2469805A1 (fr) * 1979-11-09 1981-05-22 Thomson Csf Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice
JPS5847204A (ja) * 1981-09-16 1983-03-18 Fuji Electric Corp Res & Dev Ltd 微小領域検出器
US5315114A (en) * 1981-12-18 1994-05-24 Texas Instruments Incorporated Integrated circuit detector array incorporating bucket brigade devices for time delay and integration
JPS5932250A (ja) * 1982-08-16 1984-02-21 Fuji Xerox Co Ltd 原稿読取装置
US4523326A (en) * 1983-01-17 1985-06-11 Hughes Aircraft Company Low noise charge coupled imager circuit
EP0130103A1 (en) * 1983-06-21 1985-01-02 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Charge-coupled device image sensor and method for asynchronous readout
FR2583602B1 (fr) * 1985-06-18 1988-07-01 Centre Nat Rech Scient Retine integree a reseau de processeurs
US4686574A (en) * 1986-04-04 1987-08-11 Rca Corporation Line-sequential read out of a phototsensor array via a CCD shift register clocked at a multiple of pixel scan rate
JP3630894B2 (ja) 1996-12-24 2005-03-23 株式会社半導体エネルギー研究所 電荷転送半導体装置およびその作製方法並びにイメージセンサ
US6459077B1 (en) 1998-09-15 2002-10-01 Dalsa, Inc. Bucket brigade TDI photodiode sensor
GB2343577B (en) * 1998-11-05 2001-01-24 Simage Oy Imaging device
JP2004519147A (ja) * 2001-02-08 2004-06-24 レイセオン・カンパニー ２方向可能なバケットブリゲード回路
GB2438445A (en) * 2006-05-26 2007-11-28 Thales Holdings Uk Plc A sample-and-hold circuit for microwave signals, using photoconductive switches
EP2316221A1 (en) * 2008-08-28 2011-05-04 MESA Imaging AG Demodulation pixel with daisy chain charge storage sites and method of operation therefor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289010A (en) * 1963-11-21 1966-11-29 Burroughs Corp Shift register
US3493812A (en) * 1967-04-26 1970-02-03 Rca Corp Integrated thin film translators

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017153074A (ja) * 2016-02-19 2017-08-31 株式会社半導体エネルギー研究所 撮像装置および電子機器
US11189656B2 (en) 2016-02-19 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device

Also Published As

Publication number Publication date
FR2111846A1 (enExample) 1972-06-09
US3683193A (en) 1972-08-08
FR2111846B1 (enExample) 1975-09-26
NL7114637A (enExample) 1972-04-28
NL172110B (nl) 1983-02-01
NL172110C (nl) 1983-07-01
JPS479402A (enExample) 1972-05-15
GB1370449A (en) 1974-10-16
GB1370450A (en) 1974-10-16
DE2153306B2 (de) 1973-08-30
DE2153306A1 (de) 1972-04-27
CA950049A (en) 1974-06-25
DE2153306C3 (de) 1974-03-21

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