DE2147265B2 - Verfahren zur herstellung einer epitaktisch auf einem substratkristall aufwachsenden schicht aus halbleitendem material - Google Patents
Verfahren zur herstellung einer epitaktisch auf einem substratkristall aufwachsenden schicht aus halbleitendem materialInfo
- Publication number
- DE2147265B2 DE2147265B2 DE19712147265 DE2147265A DE2147265B2 DE 2147265 B2 DE2147265 B2 DE 2147265B2 DE 19712147265 DE19712147265 DE 19712147265 DE 2147265 A DE2147265 A DE 2147265A DE 2147265 B2 DE2147265 B2 DE 2147265B2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- crystal
- substrate
- substrate crystal
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 44
- 239000000758 substrate Substances 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 26
- 230000008569 process Effects 0.000 title claims description 20
- 239000000463 material Substances 0.000 title claims description 12
- 238000001816 cooling Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000004018 waxing Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 19
- 239000002904 solvent Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 9
- 230000006872 improvement Effects 0.000 description 6
- 229910005540 GaP Inorganic materials 0.000 description 5
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 3
- 238000002231 Czochralski process Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000001617 migratory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/108—Melt back
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7655070A | 1970-09-29 | 1970-09-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2147265A1 DE2147265A1 (de) | 1972-03-30 |
| DE2147265B2 true DE2147265B2 (de) | 1973-08-23 |
Family
ID=22132733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712147265 Pending DE2147265B2 (de) | 1970-09-29 | 1971-09-22 | Verfahren zur herstellung einer epitaktisch auf einem substratkristall aufwachsenden schicht aus halbleitendem material |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3729348A (show.php) |
| JP (1) | JPS505026B1 (show.php) |
| BE (1) | BE772812A (show.php) |
| CA (1) | CA947186A (show.php) |
| DE (1) | DE2147265B2 (show.php) |
| FR (1) | FR2106326A5 (show.php) |
| GB (1) | GB1355852A (show.php) |
| IT (1) | IT939894B (show.php) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3862859A (en) * | 1972-01-10 | 1975-01-28 | Rca Corp | Method of making a semiconductor device |
| US3877883A (en) * | 1973-07-13 | 1975-04-15 | Rca Corp | Method of growing single crystals of compounds |
| JPS5137915B2 (show.php) * | 1973-10-19 | 1976-10-19 | ||
| US4246050A (en) * | 1979-07-23 | 1981-01-20 | Varian Associates, Inc. | Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system |
| GB2097695B (en) * | 1981-03-24 | 1984-08-22 | Mitsubishi Monsanto Chem | Method for producing a single crystal |
| US4421576A (en) * | 1981-09-14 | 1983-12-20 | Rca Corporation | Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate |
| US4632712A (en) * | 1983-09-12 | 1986-12-30 | Massachusetts Institute Of Technology | Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth |
| US5091333A (en) * | 1983-09-12 | 1992-02-25 | Massachusetts Institute Of Technology | Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth |
| FR2606036B1 (fr) * | 1986-11-05 | 1988-12-02 | Pechiney | Procede d'obtention, par refroidissement d'alliages a l'etat fondu, de cristaux de composes intermetalliques, notamment, de monocristaux isoles |
| JPH0787187B2 (ja) * | 1987-08-13 | 1995-09-20 | 古河電気工業株式会社 | ＧａＡｓ化合物半導体基板の製造方法 |
| US5228927A (en) * | 1988-03-25 | 1993-07-20 | Shin-Etsu Handotai Company Limited | Method for heat-treating gallium arsenide monocrystals |
| US5209811A (en) * | 1988-03-25 | 1993-05-11 | Shin-Etsu Handotai Company Limited Of Japan | Method for heat-treating gallium arsenide monocrystals |
| JPH04198095A (ja) * | 1990-11-28 | 1992-07-17 | Fujitsu Ltd | 化合物半導体薄膜成長方法 |
| US6010937A (en) * | 1995-09-05 | 2000-01-04 | Spire Corporation | Reduction of dislocations in a heteroepitaxial semiconductor structure |
-
1970
- 1970-09-29 US US00076550A patent/US3729348A/en not_active Expired - Lifetime
-
1971
- 1971-04-15 CA CA110,442A patent/CA947186A/en not_active Expired
- 1971-09-20 BE BE772812A patent/BE772812A/xx unknown
- 1971-09-22 GB GB4414971A patent/GB1355852A/en not_active Expired
- 1971-09-22 DE DE19712147265 patent/DE2147265B2/de active Pending
- 1971-09-28 FR FR7134808A patent/FR2106326A5/fr not_active Expired
- 1971-09-28 IT IT70184/71A patent/IT939894B/it active
- 1971-09-29 JP JP46075519A patent/JPS505026B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3729348A (en) | 1973-04-24 |
| JPS505026B1 (show.php) | 1975-02-27 |
| GB1355852A (en) | 1974-06-05 |
| BE772812A (fr) | 1972-01-17 |
| IT939894B (it) | 1973-02-10 |
| DE2147265A1 (de) | 1972-03-30 |
| CA947186A (en) | 1974-05-14 |
| FR2106326A5 (show.php) | 1972-04-28 |
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