DE2128083A1 - Halbleiter-Bauteil - Google Patents
Halbleiter-BauteilInfo
- Publication number
- DE2128083A1 DE2128083A1 DE19712128083 DE2128083A DE2128083A1 DE 2128083 A1 DE2128083 A1 DE 2128083A1 DE 19712128083 DE19712128083 DE 19712128083 DE 2128083 A DE2128083 A DE 2128083A DE 2128083 A1 DE2128083 A1 DE 2128083A1
- Authority
- DE
- Germany
- Prior art keywords
- contact
- semiconductor layer
- cathode
- component according
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 159
- 239000000463 material Substances 0.000 claims description 41
- 230000005684 electric field Effects 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 20
- 230000000903 blocking effect Effects 0.000 claims description 16
- 230000007704 transition Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000004347 surface barrier Methods 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 12
- 239000004020 conductor Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
Landscapes
- Electrodes Of Semiconductors (AREA)
- Microwave Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7145670A | 1970-09-11 | 1970-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2128083A1 true DE2128083A1 (de) | 1972-03-16 |
Family
ID=22101446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712128083 Pending DE2128083A1 (de) | 1970-09-11 | 1971-06-05 | Halbleiter-Bauteil |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3706014A (enExample) |
| JP (1) | JPS5313955B1 (enExample) |
| AU (1) | AU468187B2 (enExample) |
| BE (1) | BE768255A (enExample) |
| DE (1) | DE2128083A1 (enExample) |
| FR (1) | FR2106439B1 (enExample) |
| GB (1) | GB1349276A (enExample) |
| NL (1) | NL7107969A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3882528A (en) * | 1971-06-24 | 1975-05-06 | Philips Corp | Semiconductor device for producing or amplifying high-frequency electromagnetic oscillations |
| DE2247962C3 (de) * | 1972-09-29 | 1979-03-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thermoelementanordnung auf Halbleiterbasis |
| US4048646A (en) * | 1975-02-26 | 1977-09-13 | Nippon Electric Company, Limited | Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same |
| FR2360996A1 (fr) * | 1976-06-15 | 1978-03-03 | Thomson Csf | Diode semiconductrice utilisant le temps de transit des porteurs de charge, possedant une electrode a matrice de micropointes |
| US4086501A (en) * | 1976-12-14 | 1978-04-25 | Rca Corporation | Planar transferred electron logic device with improved biasing means |
| JPS6068071U (ja) * | 1983-10-17 | 1985-05-14 | 日本酸素株式会社 | 解凍調理可能な食品入り容器 |
| JPH07112772A (ja) * | 1993-10-07 | 1995-05-02 | Yasuaki Itoi | 食品容器及び即席食品 |
-
1970
- 1970-09-11 US US71456A patent/US3706014A/en not_active Expired - Lifetime
-
1971
- 1971-06-05 DE DE19712128083 patent/DE2128083A1/de active Pending
- 1971-06-08 BE BE768255A patent/BE768255A/xx unknown
- 1971-06-10 NL NL7107969A patent/NL7107969A/xx unknown
- 1971-06-10 JP JP4136671A patent/JPS5313955B1/ja active Pending
- 1971-06-11 FR FR7121212A patent/FR2106439B1/fr not_active Expired
- 1971-06-11 GB GB2755571A patent/GB1349276A/en not_active Expired
- 1971-08-17 AU AU32431/71A patent/AU468187B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2106439B1 (enExample) | 1975-07-11 |
| NL7107969A (enExample) | 1972-03-14 |
| GB1349276A (en) | 1974-04-03 |
| FR2106439A1 (enExample) | 1972-05-05 |
| US3706014A (en) | 1972-12-12 |
| AU468187B2 (en) | 1976-01-08 |
| JPS5313955B1 (enExample) | 1978-05-13 |
| BE768255A (fr) | 1971-11-03 |
| AU3243171A (en) | 1973-02-22 |
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