DE2115668A1 - Halbleitereinrichtung - Google Patents

Halbleitereinrichtung

Info

Publication number
DE2115668A1
DE2115668A1 DE19712115668 DE2115668A DE2115668A1 DE 2115668 A1 DE2115668 A1 DE 2115668A1 DE 19712115668 DE19712115668 DE 19712115668 DE 2115668 A DE2115668 A DE 2115668A DE 2115668 A1 DE2115668 A1 DE 2115668A1
Authority
DE
Germany
Prior art keywords
semiconductor
substrate
layer
insulation film
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712115668
Other languages
German (de)
English (en)
Inventor
Akira Kokubunji; Fujita Minoru Kodaira; Nagase (Japan). M
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2115668A1 publication Critical patent/DE2115668A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE19712115668 1970-08-28 1971-03-31 Halbleitereinrichtung Pending DE2115668A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45074896A JPS4940394B1 (enrdf_load_stackoverflow) 1970-08-28 1970-08-28

Publications (1)

Publication Number Publication Date
DE2115668A1 true DE2115668A1 (de) 1972-03-02

Family

ID=13560595

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712115668 Pending DE2115668A1 (de) 1970-08-28 1971-03-31 Halbleitereinrichtung

Country Status (5)

Country Link
JP (1) JPS4940394B1 (enrdf_load_stackoverflow)
DE (1) DE2115668A1 (enrdf_load_stackoverflow)
FR (1) FR2103572B1 (enrdf_load_stackoverflow)
GB (1) GB1351985A (enrdf_load_stackoverflow)
NL (1) NL7104158A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2406807A1 (de) * 1973-02-21 1974-08-22 Rca Corp Integrierte halbleiterschaltung
DE3233632A1 (de) * 1981-09-21 1983-04-21 Hitachi, Ltd., Tokyo Integrierte halbleiterschaltungsanordnung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144693U (enrdf_load_stackoverflow) * 1976-04-26 1977-11-02
SE465193B (sv) * 1989-12-06 1991-08-05 Ericsson Telefon Ab L M Foer hoegspaenning avsedd ic-krets

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2406807A1 (de) * 1973-02-21 1974-08-22 Rca Corp Integrierte halbleiterschaltung
DE3233632A1 (de) * 1981-09-21 1983-04-21 Hitachi, Ltd., Tokyo Integrierte halbleiterschaltungsanordnung

Also Published As

Publication number Publication date
GB1351985A (en) 1974-05-15
NL7104158A (enrdf_load_stackoverflow) 1972-03-01
FR2103572B1 (enrdf_load_stackoverflow) 1977-01-21
FR2103572A1 (enrdf_load_stackoverflow) 1972-04-14
JPS4940394B1 (enrdf_load_stackoverflow) 1974-11-01

Similar Documents

Publication Publication Date Title
DE3121224C2 (de) MOS-Transistor für hohe Betriebsspannungen
DE3823270C2 (de) Transistor, insbesondere Isoliergate-Bipolartransistor, und Verfahren zu seiner Herstellung
DE2125303C3 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE3888603T2 (de) Halbleiterbauelement mit Floating-Gate.
DE112016007257B4 (de) Siliziumcarbid-Halbleitervorrichtung
DE1944793C3 (de) Verfahren zur Herstellung einer integrierten Halbleiteranordnung
DE2143029A1 (de) Halbleiterschaltungsbaustein
DE2814973A1 (de) Halbleiterspeichervorrichtung und verfahren zu ihrer herstellung
DE19535140A1 (de) Lateraler MOSFET mit hoher Stehspannung und einem Graben sowie Verfahren zu dessen Herstellung
DE3145231A1 (de) Halbleiteranordnung fuer hohe spannungen
DE2311915B2 (de) Verfahren zur herstellung von elektrisch leitenden verbindungen zwischen source- und drain-bereichen in integrierten mos-schaltkreisen
DE2726003A1 (de) Verfahren zur herstellung von mis- bauelementen mit versetztem gate
DE3942640A1 (de) Mos-halbleitervorrichtung
DE102018118875A1 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE2422912A1 (de) Integrierter halbleiterkreis
DE2453279C3 (de) Halbleiteranordnung
DE3650638T2 (de) Integrierte Halbleiterschaltung mit Isolationszone
DE1589687B2 (de) Festkörperschaltung mit isolierten Feldeffekttransistoren und Verfahren zu ihrer Herstellung
DE69421119T2 (de) Thyristor mit isolierten Gate und Methode, derselben zu Betreiben
DE3650573T2 (de) Leitfähigkeitsmodulations-Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE2349938A1 (de) Halbleitervorrichtung
DE69032255T2 (de) Monolithische Halbleiteranordnung mit CCD-, bipolaren und MOS-Strukturen
DE2115668A1 (de) Halbleitereinrichtung
DE2852402C2 (de) Lateralhalbleiterbauelement für integrierte Halbleiterschaltungen
DE1297762B (de) Sperrschicht-Feldeffekttransistor

Legal Events

Date Code Title Description
OHW Rejection