DE2115650C3 - Verfahren zum Herstellen von einkristallinem Silicium - Google Patents
Verfahren zum Herstellen von einkristallinem SiliciumInfo
- Publication number
- DE2115650C3 DE2115650C3 DE19712115650 DE2115650A DE2115650C3 DE 2115650 C3 DE2115650 C3 DE 2115650C3 DE 19712115650 DE19712115650 DE 19712115650 DE 2115650 A DE2115650 A DE 2115650A DE 2115650 C3 DE2115650 C3 DE 2115650C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- rod
- dislocations
- annealing
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 4
- 238000000137 annealing Methods 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000004857 zone melting Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 6
- 230000006698 induction Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000002054 inoculum Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712115650 DE2115650C3 (de) | 1971-03-31 | 1971-03-31 | Verfahren zum Herstellen von einkristallinem Silicium |
| NL7114423A NL7114423A (online.php) | 1971-03-31 | 1971-10-20 | |
| CH1562971A CH584569A5 (online.php) | 1971-03-31 | 1971-10-27 | |
| GB406572A GB1332272A (en) | 1971-03-31 | 1972-01-28 | Monocrystalline semiconductor material |
| CA135,926A CA966763A (en) | 1971-03-31 | 1972-03-01 | Method of achieving a uniform dislocation density in a zone-melted semiconductor rod |
| IT2247972A IT959577B (it) | 1971-03-31 | 1972-03-28 | Procedimento per preparare materia le semiconduttore monocristallino specie silicio con densita delle dislocazioni regolabile |
| DK154572A DK134665C (da) | 1971-03-31 | 1972-03-29 | Fremgangsmade til fremstilling af enkrystallinsk halvledermateriale,specielt silicium,med indstillelig dislokationstethed |
| FR7211021A FR2132176B1 (online.php) | 1971-03-31 | 1972-03-29 | |
| JP3251572A JPS5432437B1 (online.php) | 1971-03-31 | 1972-03-31 | |
| BE781581A BE781581A (fr) | 1971-03-31 | 1972-03-31 | Procede de fabrication de matiere semiconductrice monocristalline, en particulier du silicium, avec une densite de distorsions ajustable |
| US05/462,936 US3939035A (en) | 1971-03-31 | 1974-04-22 | Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712115650 DE2115650C3 (de) | 1971-03-31 | 1971-03-31 | Verfahren zum Herstellen von einkristallinem Silicium |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2115650A1 DE2115650A1 (de) | 1972-10-12 |
| DE2115650B2 DE2115650B2 (de) | 1979-05-23 |
| DE2115650C3 true DE2115650C3 (de) | 1980-01-17 |
Family
ID=5803427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712115650 Expired DE2115650C3 (de) | 1971-03-31 | 1971-03-31 | Verfahren zum Herstellen von einkristallinem Silicium |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5432437B1 (online.php) |
| BE (1) | BE781581A (online.php) |
| CA (1) | CA966763A (online.php) |
| CH (1) | CH584569A5 (online.php) |
| DE (1) | DE2115650C3 (online.php) |
| DK (1) | DK134665C (online.php) |
| FR (1) | FR2132176B1 (online.php) |
| GB (1) | GB1332272A (online.php) |
| IT (1) | IT959577B (online.php) |
| NL (1) | NL7114423A (online.php) |
-
1971
- 1971-03-31 DE DE19712115650 patent/DE2115650C3/de not_active Expired
- 1971-10-20 NL NL7114423A patent/NL7114423A/xx unknown
- 1971-10-27 CH CH1562971A patent/CH584569A5/xx not_active IP Right Cessation
-
1972
- 1972-01-28 GB GB406572A patent/GB1332272A/en not_active Expired
- 1972-03-01 CA CA135,926A patent/CA966763A/en not_active Expired
- 1972-03-28 IT IT2247972A patent/IT959577B/it active
- 1972-03-29 DK DK154572A patent/DK134665C/da not_active IP Right Cessation
- 1972-03-29 FR FR7211021A patent/FR2132176B1/fr not_active Expired
- 1972-03-31 BE BE781581A patent/BE781581A/xx unknown
- 1972-03-31 JP JP3251572A patent/JPS5432437B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CH584569A5 (online.php) | 1977-02-15 |
| BE781581A (fr) | 1972-07-17 |
| GB1332272A (en) | 1973-10-03 |
| JPS5432437B1 (online.php) | 1979-10-15 |
| DK134665C (da) | 1977-05-23 |
| DE2115650A1 (de) | 1972-10-12 |
| CA966763A (en) | 1975-04-29 |
| IT959577B (it) | 1973-11-10 |
| NL7114423A (online.php) | 1972-10-03 |
| FR2132176A1 (online.php) | 1972-11-17 |
| FR2132176B1 (online.php) | 1974-08-02 |
| DK134665B (da) | 1976-12-20 |
| DE2115650B2 (de) | 1979-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |