DE2114087A1 - Verfahren zum Herstellen eines Halbleiterbauelement-Einkristalls mit gewuenschtem spezifischem Widerstand - Google Patents
Verfahren zum Herstellen eines Halbleiterbauelement-Einkristalls mit gewuenschtem spezifischem WiderstandInfo
- Publication number
- DE2114087A1 DE2114087A1 DE19712114087 DE2114087A DE2114087A1 DE 2114087 A1 DE2114087 A1 DE 2114087A1 DE 19712114087 DE19712114087 DE 19712114087 DE 2114087 A DE2114087 A DE 2114087A DE 2114087 A1 DE2114087 A1 DE 2114087A1
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- cubes
- semiconductor device
- specific resistance
- cube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 34
- 239000000356 contaminant Substances 0.000 claims description 14
- 239000000155 melt Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000029142 excretion Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2179870A | 1970-03-23 | 1970-03-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2114087A1 true DE2114087A1 (de) | 1971-10-14 |
Family
ID=21806213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712114087 Pending DE2114087A1 (de) | 1970-03-23 | 1971-03-23 | Verfahren zum Herstellen eines Halbleiterbauelement-Einkristalls mit gewuenschtem spezifischem Widerstand |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3669757A (OSRAM) |
| JP (1) | JPS5233468B1 (OSRAM) |
| DE (1) | DE2114087A1 (OSRAM) |
| FR (1) | FR2083895A5 (OSRAM) |
| GB (1) | GB1326139A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3069547D1 (en) * | 1980-06-26 | 1984-12-06 | Ibm | Process for controlling the oxygen content of silicon ingots pulled by the czochralski method |
| US4342616A (en) * | 1981-02-17 | 1982-08-03 | International Business Machines Corporation | Technique for predicting oxygen precipitation in semiconductor wafers |
| US4952425A (en) * | 1987-11-27 | 1990-08-28 | Ethyl Corporation | Method of preparing high purity dopant alloys |
| US4789596A (en) * | 1987-11-27 | 1988-12-06 | Ethyl Corporation | Dopant coated bead-like silicon particles |
| FI893246A7 (fi) * | 1988-07-07 | 1990-01-08 | Nippon Kokan Kk | Foerfarande och anordning foer framstaellning av kiselkristaller. |
-
1970
- 1970-03-23 US US21798A patent/US3669757A/en not_active Expired - Lifetime
-
1971
- 1971-01-27 FR FR7103665A patent/FR2083895A5/fr not_active Expired
- 1971-03-03 JP JP46010687A patent/JPS5233468B1/ja active Pending
- 1971-03-23 DE DE19712114087 patent/DE2114087A1/de active Pending
- 1971-04-19 GB GB2373771*A patent/GB1326139A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5233468B1 (OSRAM) | 1977-08-29 |
| GB1326139A (en) | 1973-08-08 |
| US3669757A (en) | 1972-06-13 |
| FR2083895A5 (OSRAM) | 1971-12-17 |
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