FR2083895A5 - - Google Patents

Info

Publication number
FR2083895A5
FR2083895A5 FR7103665A FR7103665A FR2083895A5 FR 2083895 A5 FR2083895 A5 FR 2083895A5 FR 7103665 A FR7103665 A FR 7103665A FR 7103665 A FR7103665 A FR 7103665A FR 2083895 A5 FR2083895 A5 FR 2083895A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7103665A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR2083895A5 publication Critical patent/FR2083895A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7103665A 1970-03-23 1971-01-27 Expired FR2083895A5 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2179870A 1970-03-23 1970-03-23

Publications (1)

Publication Number Publication Date
FR2083895A5 true FR2083895A5 (OSRAM) 1971-12-17

Family

ID=21806213

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7103665A Expired FR2083895A5 (OSRAM) 1970-03-23 1971-01-27

Country Status (5)

Country Link
US (1) US3669757A (OSRAM)
JP (1) JPS5233468B1 (OSRAM)
DE (1) DE2114087A1 (OSRAM)
FR (1) FR2083895A5 (OSRAM)
GB (1) GB1326139A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0318008A3 (en) * 1987-11-27 1989-09-20 Ethyl Corporation High purity doping alloys
EP0350305A3 (en) * 1988-07-07 1990-08-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
US4342616A (en) * 1981-02-17 1982-08-03 International Business Machines Corporation Technique for predicting oxygen precipitation in semiconductor wafers
US4952425A (en) * 1987-11-27 1990-08-28 Ethyl Corporation Method of preparing high purity dopant alloys

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0318008A3 (en) * 1987-11-27 1989-09-20 Ethyl Corporation High purity doping alloys
EP0350305A3 (en) * 1988-07-07 1990-08-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals

Also Published As

Publication number Publication date
JPS5233468B1 (OSRAM) 1977-08-29
GB1326139A (en) 1973-08-08
US3669757A (en) 1972-06-13
DE2114087A1 (de) 1971-10-14

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Legal Events

Date Code Title Description
ST Notification of lapse