DE2111409C3 - Dynamisches Schieberegister - Google Patents
Dynamisches SchieberegisterInfo
- Publication number
- DE2111409C3 DE2111409C3 DE2111409A DE2111409A DE2111409C3 DE 2111409 C3 DE2111409 C3 DE 2111409C3 DE 2111409 A DE2111409 A DE 2111409A DE 2111409 A DE2111409 A DE 2111409A DE 2111409 C3 DE2111409 C3 DE 2111409C3
- Authority
- DE
- Germany
- Prior art keywords
- pulses
- transistor
- shift register
- cell
- dynamic shift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 210000004027 cell Anatomy 0.000 claims description 41
- 230000015654 memory Effects 0.000 claims description 17
- 230000008929 regeneration Effects 0.000 claims description 17
- 238000011069 regeneration method Methods 0.000 claims description 17
- 230000003071 parasitic effect Effects 0.000 claims description 11
- 238000012432 intermediate storage Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 210000000352 storage cell Anatomy 0.000 claims description 2
- 230000005669 field effect Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000006403 short-term memory Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Shift Register Type Memory (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1858370A | 1970-03-11 | 1970-03-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2111409A1 DE2111409A1 (de) | 1971-09-30 |
| DE2111409B2 DE2111409B2 (de) | 1974-10-17 |
| DE2111409C3 true DE2111409C3 (de) | 1975-05-28 |
Family
ID=21788691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2111409A Expired DE2111409C3 (de) | 1970-03-11 | 1971-03-10 | Dynamisches Schieberegister |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3676863A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5144784B1 (cg-RX-API-DMAC10.html) |
| CA (1) | CA927929A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2111409C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2081841B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1324136A (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5793668A (en) * | 1997-06-06 | 1998-08-11 | Timeplex, Inc. | Method and apparatus for using parasitic capacitances of a printed circuit board as a temporary data storage medium working with a remote device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB786056A (en) * | 1955-05-25 | 1957-11-13 | Standard Telephones Cables Ltd | Improvements in or relating to electrical circuits employing static electrical switches |
| US3082332A (en) * | 1961-01-26 | 1963-03-19 | Thompson Ramo Wooldridge Inc | Capacitive type circulating register |
| US3289010A (en) * | 1963-11-21 | 1966-11-29 | Burroughs Corp | Shift register |
| US3461312A (en) * | 1964-10-13 | 1969-08-12 | Ibm | Signal storage circuit utilizing charge storage characteristics of field-effect transistor |
| NL163392C (nl) * | 1966-10-25 | 1980-03-17 | Philips Nv | Condensatoroverlaadinrichting. |
| NL6807435A (cg-RX-API-DMAC10.html) * | 1968-05-25 | 1969-11-27 |
-
1970
- 1970-03-11 US US18583A patent/US3676863A/en not_active Expired - Lifetime
-
1971
- 1971-01-29 JP JP46002890A patent/JPS5144784B1/ja active Pending
- 1971-02-02 FR FR7104519A patent/FR2081841B1/fr not_active Expired
- 1971-02-26 CA CA106341A patent/CA927929A/en not_active Expired
- 1971-03-10 DE DE2111409A patent/DE2111409C3/de not_active Expired
- 1971-04-19 GB GB2317871*A patent/GB1324136A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2111409B2 (de) | 1974-10-17 |
| FR2081841A1 (cg-RX-API-DMAC10.html) | 1971-12-10 |
| FR2081841B1 (cg-RX-API-DMAC10.html) | 1974-10-31 |
| US3676863A (en) | 1972-07-11 |
| JPS5144784B1 (cg-RX-API-DMAC10.html) | 1976-11-30 |
| DE2111409A1 (de) | 1971-09-30 |
| CA927929A (en) | 1973-06-05 |
| GB1324136A (en) | 1973-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |