DE2108075A1 - Hochfrequenz Leistungstransistor - Google Patents
Hochfrequenz LeistungstransistorInfo
- Publication number
- DE2108075A1 DE2108075A1 DE19712108075 DE2108075A DE2108075A1 DE 2108075 A1 DE2108075 A1 DE 2108075A1 DE 19712108075 DE19712108075 DE 19712108075 DE 2108075 A DE2108075 A DE 2108075A DE 2108075 A1 DE2108075 A1 DE 2108075A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- emitter
- base
- collector
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1312070A | 1970-02-20 | 1970-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2108075A1 true DE2108075A1 (de) | 1971-09-09 |
Family
ID=21758407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712108075 Pending DE2108075A1 (de) | 1970-02-20 | 1971-02-19 | Hochfrequenz Leistungstransistor |
Country Status (9)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3902188A (en) * | 1973-08-15 | 1975-08-26 | Rca Corp | High frequency transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514008B2 (de) * | 1965-04-22 | 1972-12-07 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Flaechentransistor |
-
1970
- 1970-02-20 US US13120A patent/US3602780A/en not_active Expired - Lifetime
- 1970-12-11 JP JP45111089A patent/JPS5218553B1/ja active Pending
-
1971
- 1971-01-27 FR FR7102679A patent/FR2080642B1/fr not_active Expired
- 1971-02-13 ES ES388247A patent/ES388247A1/es not_active Expired
- 1971-02-18 BE BE763153A patent/BE763153A/xx unknown
- 1971-02-19 NL NL7102254A patent/NL7102254A/xx unknown
- 1971-02-19 SE SE02148/71A patent/SE366149B/xx unknown
- 1971-02-19 DE DE19712108075 patent/DE2108075A1/de active Pending
- 1971-04-19 GB GB2162071A patent/GB1321354A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3602780A (en) | 1971-08-31 |
| GB1321354A (en) | 1973-06-27 |
| BE763153A (fr) | 1971-08-18 |
| JPS5218553B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1977-05-23 |
| FR2080642A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-11-19 |
| NL7102254A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-08-24 |
| SE366149B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-04-08 |
| ES388247A1 (es) | 1974-02-16 |
| FR2080642B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-10-29 |
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