DE2062060C3 - Transistor - Google Patents

Transistor

Info

Publication number
DE2062060C3
DE2062060C3 DE2062060A DE2062060A DE2062060C3 DE 2062060 C3 DE2062060 C3 DE 2062060C3 DE 2062060 A DE2062060 A DE 2062060A DE 2062060 A DE2062060 A DE 2062060A DE 2062060 C3 DE2062060 C3 DE 2062060C3
Authority
DE
Germany
Prior art keywords
emitter
contact layer
base
web
fingers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2062060A
Other languages
German (de)
English (en)
Other versions
DE2062060A1 (de
DE2062060B2 (de
Inventor
Norbert William Ironia Brackelmanns
Joel West Orange Ollendorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2062060A1 publication Critical patent/DE2062060A1/de
Publication of DE2062060B2 publication Critical patent/DE2062060B2/de
Application granted granted Critical
Publication of DE2062060C3 publication Critical patent/DE2062060C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
DE2062060A 1969-12-18 1970-12-16 Transistor Expired DE2062060C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88629369A 1969-12-18 1969-12-18

Publications (3)

Publication Number Publication Date
DE2062060A1 DE2062060A1 (de) 1971-06-24
DE2062060B2 DE2062060B2 (de) 1979-02-22
DE2062060C3 true DE2062060C3 (de) 1979-10-25

Family

ID=25388794

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2062060A Expired DE2062060C3 (de) 1969-12-18 1970-12-16 Transistor

Country Status (6)

Country Link
US (1) US3600646A (enrdf_load_stackoverflow)
JP (1) JPS516510B1 (enrdf_load_stackoverflow)
BE (1) BE760420A (enrdf_load_stackoverflow)
DE (1) DE2062060C3 (enrdf_load_stackoverflow)
FR (1) FR2068825B1 (enrdf_load_stackoverflow)
GB (1) GB1283639A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
JPS5929791A (ja) * 1982-08-13 1984-02-17 Mitsubishi Electric Corp スクロ−ル圧縮機
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
KR100340648B1 (ko) * 2001-10-22 2002-06-20 염병렬 바이폴라 트랜지스터

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers

Also Published As

Publication number Publication date
FR2068825A1 (enrdf_load_stackoverflow) 1971-09-03
DE2062060A1 (de) 1971-06-24
US3600646A (en) 1971-08-17
GB1283639A (en) 1972-08-02
JPS516510B1 (enrdf_load_stackoverflow) 1976-02-28
DE2062060B2 (de) 1979-02-22
BE760420A (fr) 1971-05-27
FR2068825B1 (enrdf_load_stackoverflow) 1974-09-20

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
EHJ Ceased/non-payment of the annual fee