US3600646A - Power transistor - Google Patents

Power transistor Download PDF

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Publication number
US3600646A
US3600646A US886293A US3600646DA US3600646A US 3600646 A US3600646 A US 3600646A US 886293 A US886293 A US 886293A US 3600646D A US3600646D A US 3600646DA US 3600646 A US3600646 A US 3600646A
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US
United States
Prior art keywords
emitter
finger
base
layer
web
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US886293A
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English (en)
Inventor
Norbert William Brackelmanns
Joel Ollendorf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
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Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of US3600646A publication Critical patent/US3600646A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs

Definitions

  • a transistor with interdigitated emitter and base fingers in which the emitter has a web portion for feeding current to the fingers, and metal layers on both the web and the fingers;
  • the emitter finger metal layers are spaced from the web portion metal layers to introduce a ballasting resistance, with that portion of each finger metal layer proximate to the web portion being substantially wider than the remainder of the finger layer, and interspersed between the corresponding base finger and the emitter web portion to maintain a uniform distance between the base finger and the emitter finger metal layer.
  • the present invention relates to transistors required to handle relatively large amounts of power;
  • High power transistors usually include an emitter region having a relatively large area so that the power is distributed overthe device to keep the power per unit area within safe limits. It has previously been foundthat', in a power transistor having a relatively large area emitter, emitter-base injection occurs mainly around the periphery of the emitter. It has therefore become the practice to define the emitter region so that it has as large a periphery as possible in relation to area.
  • ' or similar shape which include a plurality of convolutions extending radially outwardly from a hub portion.
  • Another is a multiplicity of separate emitter sites connected .in parallel to function as a single emitter.
  • Still anotherconfiguration is one in which the base regionv and the emitter region are of generally comb shape with a web portion and interdigitated fingers. The emitter may be a double comb with the web portions back to back.
  • emitter ballasting resistors in that type of emitterwhich 'has a generally comb shape with fingers extending out from a central web portion which serves as a current feed path. Thishas been accomplished by leaving a space between the metal layer which covers the web portion of the emitter and the metal layer coveringeach fingerportion, since this forces current traveling to the fingers to travel a given distance through the more highly resistive semiconductor.
  • spacing the finger contact metal from the web portion contactmetal does not alone improve the second breakdown characteristics, because in prior art devices, that portion of the emitter base junction nearest the extremities of the base fingers had been formed too close to the emitter web portion.
  • the IR drop between this extremity and the emitter web was'less than'the IR drop in the spacing between the emitter web contact layer and the emitter finger metal, which, in essence obviatedthe benefits derived from :the ballast resistance spacing.
  • a power transistor of the present invention comprises emitter, base, and collector regions of alternate conductivity types. having a PN junction between the emitterand the base regions, and between the base and collector regions.
  • the emitter region has a central web portion, and fingers extending outwardly from the web portion, with a metal contact layer covering part of theemitter web portion.
  • the base region includes base fingers interdigitated with the emitter fingers.
  • FIGURE of the drawing is a plan view oft'h'e top surface of a transistor constructed in accordance 'with the present invention.
  • a transistor 10 constructed in accordance with the present invention comprises a collector region (not shown) and a base region 12 adjacentthe collector region, with a PN junction therebetween.
  • the base region 12 may either be an epitaxial layer grown on the collector region and of opposite conductivity type to the collector region, or it may be a pocket diffused into the collector region.
  • the transistor 10 also includes an emitter region 14 which may be formed by diffusing impurities into the base region 12 so that the emitter region 14 is of a conductivity type opposite to the base region.
  • the device may either be of NPN or PNP configuration.
  • the base region where it surrounds the emitter region, comprises a web portion 18 and a plurality of fingers 20 extending outwardly from the web portion 18 and perpendicular thereto.
  • the emitter region 14 also includes a web portion 22 and fingers 24 which are interdigitated with the base fingers 20.
  • the emitter web portion22 is partly covered with a metal contactlayer 26 which provides a low resistance feed-through for current entering the emitter region 14.
  • each emitter finger 24 is partially covered with a metal contact layer 28, which does not touch the junction 16.
  • the emitter finger contact layers 28 are separated from the emitter web portion metal layer 26 by a distance d."
  • a definite resistance value is introduced in the current path between the web portion metal layer 26 and the finger metal layer 28, the magnitude of which depends upon the distance of separation d" and the sheet resistance of the emitter region 14.
  • each contact layer 28 is spaced from the PN junction 16 by a distance s," which introduces a resistance between the layer 28 and the junction.
  • each contact layer has a proximal portion 30 which is substantially wider than the remainder of the contact layer, and is interspersed between the base finger 20 and the emitter web portion 22 to maintain a uniform distance s at all points.
  • the transistor 10 further includes a base region metal layer 32 having a web portion contact layer 34 and base finger contact layers 36.
  • each emitter finger contact layer 28 is shown in the drawing as generally triangular in shape, it will be understood that the proximal portion 30 may have any tapered, rounded, or chamfered shape; the important consideration being that the distance s" between the emitter finger contact layer 28 and the emitter-base junction 16 is uniform at all points.
  • the actual dimensions of the ballast resistance spacing d and the finger metal-to-junction distance S" is a design criteria; by way of example, the spacing d" may be 1.0 mil. and the distance 8" may be 2.0 mils.
  • the transistor 10 may be fabricated by methods well known in the art.
  • the emitter and base contact layers may comprise a malleable metal, such as a tin-lead alloy or aluminum, or a refractory metal, such as tungsten; however, the tin-lead alloy is preferred.
  • the dimensions of the emitter periphery may be designed independent of ballast resistance considerations.
  • transistors constructed as described above have improved resistance to second breakdown; the devices can be operated safely at considerably higher voltages than previously known transistors of this same general type.
  • a transistor comprising:
  • the emitter region comprising a central web portion and fingers extending outwardly from the web portion;
  • the base region including base fingers interdigitated with the emitter fingers
  • each contact layer having a proximal portion adjacent to, but separated from, the emitter web contact finger so as to introduce a ballasting resistance therebetween;
  • means for providing a substantially uniform resistance between the metal web contact layer and each of the base fingers comprising the proximal portion of each emitter finger contact layer being substantially wider than the remainder of the layer, so that the proximal portion is interspersed between the corresponding base finger and the web portion to maintain a uniform distance between the base finger and the emitter finger contact layer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
US886293A 1969-12-18 1969-12-18 Power transistor Expired - Lifetime US3600646A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88629369A 1969-12-18 1969-12-18

Publications (1)

Publication Number Publication Date
US3600646A true US3600646A (en) 1971-08-17

Family

ID=25388794

Family Applications (1)

Application Number Title Priority Date Filing Date
US886293A Expired - Lifetime US3600646A (en) 1969-12-18 1969-12-18 Power transistor

Country Status (6)

Country Link
US (1) US3600646A (enrdf_load_stackoverflow)
JP (1) JPS516510B1 (enrdf_load_stackoverflow)
BE (1) BE760420A (enrdf_load_stackoverflow)
DE (1) DE2062060C3 (enrdf_load_stackoverflow)
FR (1) FR2068825B1 (enrdf_load_stackoverflow)
GB (1) GB1283639A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893154A (en) * 1972-10-21 1975-07-01 Licentia Gmbh Semiconductor arrangement with current stabilizing resistance
US4586072A (en) * 1981-07-28 1986-04-29 Fujitsu Limited Bipolar transistor with meshed emitter
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
FR2831329A1 (fr) * 2001-10-22 2003-04-25 Asb Inc Transistor bipolaire

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929791A (ja) * 1982-08-13 1984-02-17 Mitsubishi Electric Corp スクロ−ル圧縮機
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893154A (en) * 1972-10-21 1975-07-01 Licentia Gmbh Semiconductor arrangement with current stabilizing resistance
US4586072A (en) * 1981-07-28 1986-04-29 Fujitsu Limited Bipolar transistor with meshed emitter
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
FR2831329A1 (fr) * 2001-10-22 2003-04-25 Asb Inc Transistor bipolaire
GB2385463A (en) * 2001-10-22 2003-08-20 Asb Inc Bipolar transistor

Also Published As

Publication number Publication date
GB1283639A (en) 1972-08-02
BE760420A (fr) 1971-05-27
DE2062060C3 (de) 1979-10-25
DE2062060B2 (de) 1979-02-22
DE2062060A1 (de) 1971-06-24
FR2068825B1 (enrdf_load_stackoverflow) 1974-09-20
FR2068825A1 (enrdf_load_stackoverflow) 1971-09-03
JPS516510B1 (enrdf_load_stackoverflow) 1976-02-28

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