FR2068825A1 - - Google Patents

Info

Publication number
FR2068825A1
FR2068825A1 FR7042966A FR7042966A FR2068825A1 FR 2068825 A1 FR2068825 A1 FR 2068825A1 FR 7042966 A FR7042966 A FR 7042966A FR 7042966 A FR7042966 A FR 7042966A FR 2068825 A1 FR2068825 A1 FR 2068825A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7042966A
Other languages
French (fr)
Other versions
FR2068825B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2068825A1 publication Critical patent/FR2068825A1/fr
Application granted granted Critical
Publication of FR2068825B1 publication Critical patent/FR2068825B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7042966A 1969-12-18 1970-11-30 Expired FR2068825B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88629369A 1969-12-18 1969-12-18

Publications (2)

Publication Number Publication Date
FR2068825A1 true FR2068825A1 (enrdf_load_stackoverflow) 1971-09-03
FR2068825B1 FR2068825B1 (enrdf_load_stackoverflow) 1974-09-20

Family

ID=25388794

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7042966A Expired FR2068825B1 (enrdf_load_stackoverflow) 1969-12-18 1970-11-30

Country Status (6)

Country Link
US (1) US3600646A (enrdf_load_stackoverflow)
JP (1) JPS516510B1 (enrdf_load_stackoverflow)
BE (1) BE760420A (enrdf_load_stackoverflow)
DE (1) DE2062060C3 (enrdf_load_stackoverflow)
FR (1) FR2068825B1 (enrdf_load_stackoverflow)
GB (1) GB1283639A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
JPS5929791A (ja) * 1982-08-13 1984-02-17 Mitsubishi Electric Corp スクロ−ル圧縮機
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
KR100340648B1 (ko) * 2001-10-22 2002-06-20 염병렬 바이폴라 트랜지스터

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
FR2014375A1 (enrdf_load_stackoverflow) * 1968-06-28 1970-04-17 Rca Corp

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
FR2014375A1 (enrdf_load_stackoverflow) * 1968-06-28 1970-04-17 Rca Corp

Also Published As

Publication number Publication date
FR2068825B1 (enrdf_load_stackoverflow) 1974-09-20
BE760420A (fr) 1971-05-27
JPS516510B1 (enrdf_load_stackoverflow) 1976-02-28
DE2062060C3 (de) 1979-10-25
US3600646A (en) 1971-08-17
DE2062060A1 (de) 1971-06-24
GB1283639A (en) 1972-08-02
DE2062060B2 (de) 1979-02-22

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Legal Events

Date Code Title Description
ST Notification of lapse