DE2062058C3 - Schichtkörper und Verfahren zu seiner Herstellung - Google Patents
Schichtkörper und Verfahren zu seiner HerstellungInfo
- Publication number
- DE2062058C3 DE2062058C3 DE2062058A DE2062058A DE2062058C3 DE 2062058 C3 DE2062058 C3 DE 2062058C3 DE 2062058 A DE2062058 A DE 2062058A DE 2062058 A DE2062058 A DE 2062058A DE 2062058 C3 DE2062058 C3 DE 2062058C3
- Authority
- DE
- Germany
- Prior art keywords
- film
- substrate
- layer
- areas
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010408 film Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 45
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 229910001507 metal halide Inorganic materials 0.000 claims description 8
- 150000005309 metal halides Chemical class 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- 229910052689 Holmium Inorganic materials 0.000 claims description 6
- 229910052779 Neodymium Inorganic materials 0.000 claims description 6
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 6
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 5
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 5
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- 230000033001 locomotion Effects 0.000 claims description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 5
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 5
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052773 Promethium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000011572 manganese Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 12
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- IWNWLPUNKAYUAW-UHFFFAOYSA-N Ethylendiamine dihydroiodide Chemical compound I.I.NCCN IWNWLPUNKAYUAW-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 claims 1
- 230000005381 magnetic domain Effects 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 108090000623 proteins and genes Proteins 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000002023 wood Substances 0.000 claims 1
- -1 gadominium Chemical compound 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- RUQSMSKTBIPRRA-UHFFFAOYSA-N yttrium Chemical compound [Y].[Y] RUQSMSKTBIPRRA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- BENVHZMCHFXQGC-UHFFFAOYSA-N gallium praseodymium Chemical compound [Ga].[Pr] BENVHZMCHFXQGC-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 241000251730 Chondrichthyes Species 0.000 description 1
- 125000000174 L-prolyl group Chemical group [H]N1C([H])([H])C([H])([H])C([H])([H])[C@@]1([H])C(*)=O 0.000 description 1
- DQTDSNHWEMSXLM-UHFFFAOYSA-N [Eu]=[V] Chemical compound [Eu]=[V] DQTDSNHWEMSXLM-UHFFFAOYSA-N 0.000 description 1
- ROFXWCBGQDURBU-UHFFFAOYSA-N [Sc].[Nd] Chemical compound [Sc].[Nd] ROFXWCBGQDURBU-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- RHHKFWAWJKOFPJ-UHFFFAOYSA-N [W].[La].[La] Chemical compound [W].[La].[La] RHHKFWAWJKOFPJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- ADCXHZZSUADYMI-UHFFFAOYSA-N cadmium lithium Chemical compound [Li].[Cd] ADCXHZZSUADYMI-UHFFFAOYSA-N 0.000 description 1
- ZFXVRMSLJDYJCH-UHFFFAOYSA-N calcium magnesium Chemical compound [Mg].[Ca] ZFXVRMSLJDYJCH-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- MEANOSLIBWSCIT-UHFFFAOYSA-K gadolinium trichloride Chemical compound Cl[Gd](Cl)Cl MEANOSLIBWSCIT-UHFFFAOYSA-K 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 239000011872 intimate mixture Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/22—Orthoferrites, e.g. RFeO3 (R= rare earth element) with orthorhombic structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/265—Magnetic multilayers non exchange-coupled
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98970A | 1970-01-06 | 1970-01-06 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2062058A1 DE2062058A1 (de) | 1971-07-15 |
| DE2062058B2 DE2062058B2 (de) | 1974-02-21 |
| DE2062058C3 true DE2062058C3 (de) | 1974-10-03 |
Family
ID=21693854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2062058A Expired DE2062058C3 (de) | 1970-01-06 | 1970-12-16 | Schichtkörper und Verfahren zu seiner Herstellung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3645787A (enExample) |
| JP (1) | JPS5117720B1 (enExample) |
| CA (1) | CA924613A (enExample) |
| DE (1) | DE2062058C3 (enExample) |
| FR (1) | FR2075021A5 (enExample) |
| GB (1) | GB1319474A (enExample) |
| NL (1) | NL7014495A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3946124A (en) * | 1970-03-04 | 1976-03-23 | Rockwell International Corporation | Method of forming a composite structure |
| US4001793A (en) * | 1973-07-02 | 1977-01-04 | Rockwell International Corporation | Magnetic bubble domain composite with hard bubble suppression |
| DE69932701T2 (de) * | 1999-03-19 | 2007-09-13 | Hitachi Global Storage Technologies Netherlands B.V. | Pinning-Lage für magnetische Anordnungen |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1174306B (de) * | 1956-05-23 | 1964-07-23 | Hoechst Ag | Verfahren zur Herstellung von Sulfonylharnstoffen |
| NL225323A (enExample) * | 1957-02-28 | |||
| US3332796A (en) * | 1961-06-26 | 1967-07-25 | Philips Corp | Preparing nickel ferrite single crystals on a monocrystalline substrate |
| US3511702A (en) * | 1965-08-20 | 1970-05-12 | Motorola Inc | Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen |
| US3429740A (en) * | 1965-09-24 | 1969-02-25 | North American Rockwell | Growing garnet on non-garnet single crystal |
| US3460116A (en) * | 1966-09-16 | 1969-08-05 | Bell Telephone Labor Inc | Magnetic domain propagation circuit |
| US3421933A (en) * | 1966-12-14 | 1969-01-14 | North American Rockwell | Spinel ferrite epitaxial composite |
-
1970
- 1970-01-06 US US989A patent/US3645787A/en not_active Expired - Lifetime
- 1970-08-12 CA CA091257A patent/CA924613A/en not_active Expired
- 1970-09-02 GB GB4202770A patent/GB1319474A/en not_active Expired
- 1970-10-02 NL NL7014495A patent/NL7014495A/xx unknown
- 1970-12-10 JP JP70110355A patent/JPS5117720B1/ja active Pending
- 1970-12-15 FR FR7045146A patent/FR2075021A5/fr not_active Expired
- 1970-12-16 DE DE2062058A patent/DE2062058C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2062058A1 (de) | 1971-07-15 |
| JPS5117720B1 (enExample) | 1976-06-04 |
| NL7014495A (enExample) | 1971-07-08 |
| US3645787A (en) | 1972-02-29 |
| GB1319474A (en) | 1973-06-06 |
| FR2075021A5 (enExample) | 1971-10-08 |
| CA924613A (en) | 1973-04-17 |
| DE2062058B2 (de) | 1974-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0239664A1 (de) | Verfahren zum Herstellen von Silicium und Sauerstoff enthaltenden Schichten | |
| DE2643793A1 (de) | Verfahren zum zuechten monokristalliner epitaktischer schichten aus seltene erde eisen-granat-werkstoffen | |
| DE3026030C2 (de) | Vorrichtungsteil für die Halbleitertechnik, Verfahren und Vorrichtung zu dessen Herstellung | |
| DE3781016T2 (de) | Verfahren zur zuechtung eines multikomponent-kristalls. | |
| DE1646789B2 (de) | Zweiechichtkörper, bestehend aus einem einkristallinen Substrat und einem heteroepitaktlsch aufgewachsenen Film, und Verfahren zu dessen Herstellung | |
| DE69805824T2 (de) | Vorrichtung und verfahren zur kristallzüchtung | |
| DE3111657C2 (de) | Verfahren zur Herstellung von Magnetschichten auf Substraten mit Granatstruktur | |
| DE2062058C3 (de) | Schichtkörper und Verfahren zu seiner Herstellung | |
| DE2052221B2 (de) | Verfahren zum erzeugen einer siliciumoxidschicht auf einem siliciumsubstrat und vorrichtung zur durchfuehrung dieses verfahrens | |
| DE2063211C3 (de) | Schichtkörper mit je einem einkristallinen, magnetischen Film auf wenigstens einer Seite eines elektrisch isolierenden, einkristallinen Substrats | |
| DE2726744C3 (de) | Einkristallines Substrat aus Calcium-Gallium-Granat sowie mit diesem hergestellte magnetische Blasendomänenanordnung | |
| DE69405019T2 (de) | Verfahren und Vorrichtung zur Herstellung dunner kristalliner Schichten für Festkörperlasern | |
| EP0023063B1 (de) | Einkristall auf der Basis von Seltenerdmetall-Gallium-Granat und magnetische Dünnschichtanordnung mit einem monokristallinen Granat-Substrat | |
| DE2040761A1 (de) | Infrarotempfindliches photoleitendes Halbleiterbauelement und Verfahren zum Herstellen dieses Halbleiterbauelementes | |
| DE3325058C2 (de) | Verfahren und Vorrichtung zum epitaktischen Aufwachsen eines ZnSe-Einkristalls | |
| EP0036898B1 (de) | Verfahren zur Herstellung von Verbundwerkstoffen, bestehend aus Substraten und aus auf deren Oberflächen festhaftenden, metallischen Schichten metastabiler oder instabiler Phasen | |
| DE3872644T2 (de) | Verfahren zum erzeugen von monokristallinen quecksilber-cadmium-tellurid-schichten. | |
| DE1813844A1 (de) | Herstellung von Mangan-Wismut | |
| DE2508651C3 (de) | Verfahren zur Herstellung eines ununterbrochenen kristallinen Bandes | |
| EP1805354B1 (de) | Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen | |
| DE3107635A1 (de) | Kristallischer koerper aus quecksilber (ii)-iodid fuer einen strahlungsdetektor und verfahren zur herstellung eines solchen koerpers | |
| DE2357230A1 (de) | Vorrichtung zum epitaktischen aufwachsen von halbleitermaterial aus der fluessigen phase auf halbleitersubstraten | |
| DE2515173A1 (de) | Unterdrueckung von harten magnetblasendomaenen aufgrund der charakteristischen temperatur und der kristallorientierung | |
| DE2713190C2 (de) | Verfahren zum Herstellen aufgedampfter, amorpher Gadolinium-Eisen- Schichten | |
| DE2060476C2 (de) | Verfahren zur Herstellung von Halbleiter- und Dünnschichtbauelementen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |